Motorola MRF1500 Datasheet

1

MRF1500MOTOROLA RF DEVICE DATA

The RF Line

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 

Designed for 1025–1150 MHz pulse common base amplifier applications

such as DME.

• Guaranteed Performance @ 1090 MHz
Output Power = 500 Watts Peak
Gain = 5.2 dB Min

• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Hermetically Sealed Industry Package

• Silicon Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Internal Input Matching

• Characterized with 10 µs, 1.0% Duty Cycle Pulses

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CES

65 Vdc

Collector–Base Voltage V

CBO

65 Vdc

Emitter–Base Voltage V

EBO

3.5 Vdc

Collector Current — Peak (1) I

C

35 Adc

Total Device Dissipation @ TC = 25°C (1), (2)

Derate above 25°C

P

D

1750

10

Watts

W/°C

Storage Temperature Range T

stg

–65 to +200 °C

Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (3) R

θJC

0.1 °C/W

NOTES:

1. Under pulse RF operating conditions.

2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.

3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value
measured @32 µs, 2.0%)

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MRF1500/D

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SEMICONDUCTOR TECHNICAL DATA



500 W (PEAK), 1025–1150 MHz

MICROWAVE POWER

TRANSISTOR
NPN SILICON

CASE 355E–01, STYLE 1

Motorola Preferred Device

 Motorola, Inc. 1994

REV 6

MRF1500
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V

(BR)CES

70 — — Vdc

Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V

(BR)CBO

70 — — Vdc

Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V

(BR)EBO

4.0 — — Vdc

Collector Cutoff Current (VCB = 50 Vdc, IE = 0) I

CBO

— — 40 mAdc

ON CHARACTERISTICS

DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) h

FE

20 40 — —

FUNCTIONAL TESTS

Common–Base Amplifier Power Gain

(VCC = 50 Vdc, P

out

= 500 W Peak, f = 1090 MHz)

G

PB

5.2 — — dB

Collector Efficiency

(VCC = 50 Vdc, P

out

= 500 W Peak, f = 1090 MHz)

η 37 — — %

Load Mismatch

(VCC = 50 Vdc, P

out

= 500 W Peak, f = 1090 MHz,

Load VSWR = 10:1 All Phase Angles)

ψ No Degradation in Output Power

C1 — 82 pF 100 mil Chip Capacitor
C2 — 82 pF 100 mill Chip Capacitor
C3 — 0.1 µF
C4 — 10 µF 100 V, Electrolytic
C5 — 1000 µF 60 V, Electrolytic

C4C2 C3 C5

+

–

C1

Z8Z6Z1 Z2 Z3 Z4 Z5 Z9 Z10 Z11 Z14Z13Z12

Z7

D.U.T.

RF

INPUT

++

RF

OUTPUT

141

1.200

50

50

182

1.598

50

50

1.183 418

840

1.576

698

630

182

508

277

205

380

50

383

528

217

5050

383

50

182

464

431

1.332

331

50

L1 — 3 Turns, #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z14 — Microstrip, See Details Below
Board Material — Teflon–Glass Laminate,
Dielectric Thickness = .020″,
∈r = 2.55, 2 oz. Copper

Figure 1. Test Circuit