Motorola MRF1500 Datasheet
1
MRF1500MOTOROLA RF DEVICE DATA
The RF Line
Designed for 1025–1150 MHz pulse common base amplifier applications
such as DME.
• Guaranteed Performance @ 1090 MHz
Output Power = 500 Watts Peak
Gain = 5.2 dB Min
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Industry Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching
• Characterized with 10 µs, 1.0% Duty Cycle Pulses
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CES
65 Vdc
Collector–Base Voltage V
CBO
65 Vdc
Emitter–Base Voltage V
EBO
3.5 Vdc
Collector Current — Peak (1) I
C
35 Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
P
D
1750
10
Watts
W/°C
Storage Temperature Range T
stg
–65 to +200 °C
Junction Temperature T
J
200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (3) R
θJC
0.1 °C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value
measured @32 µs, 2.0%)
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MRF1500/D
SEMICONDUCTOR TECHNICAL DATA
500 W (PEAK), 1025–1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355E–01, STYLE 1
Motorola Preferred Device
Motorola, Inc. 1994
REV 6
MRF1500
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V
(BR)CES
70 — — Vdc
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V
(BR)CBO
70 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current (VCB = 50 Vdc, IE = 0) I
CBO
— — 40 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) h
FE
20 40 — —
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, P
out
= 500 W Peak, f = 1090 MHz)
G
PB
5.2 — — dB
Collector Efficiency
(VCC = 50 Vdc, P
out
= 500 W Peak, f = 1090 MHz)
η 37 — — %
Load Mismatch
(VCC = 50 Vdc, P
out
= 500 W Peak, f = 1090 MHz,
Load VSWR = 10:1 All Phase Angles)
ψ No Degradation in Output Power
C1 — 82 pF 100 mil Chip Capacitor
C2 — 82 pF 100 mill Chip Capacitor
C3 — 0.1 µF
C4 — 10 µF 100 V, Electrolytic
C5 — 1000 µF 60 V, Electrolytic
C4C2 C3 C5
+
–
C1
Z8Z6Z1 Z2 Z3 Z4 Z5 Z9 Z10 Z11 Z14Z13Z12
Z7
D.U.T.
RF
INPUT
++
RF
OUTPUT
141
1.200
50
50
182
1.598
50
50
1.183 418
840
1.576
698
630
182
508
277
205
380
50
383
528
217
5050
383
50
182
464
431
1.332
331
50
L1 — 3 Turns, #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z14 — Microstrip, See Details Below
Board Material — Teflon–Glass Laminate,
Dielectric Thickness = .020″,
∈r = 2.55, 2 oz. Copper
Figure 1. Test Circuit
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