Motorola MRF150 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed primarily for linear large–signal output stages up to150 MHz
frequency range.
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
• Superior High Order IMD
• IMD
• IMD
• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
(150 W PEP) — –32 dB (Typ)
(d3)
(150 W PEP) — –60 dB (Typ)
(d1 1)
D
Order this document
by MRF150/D
150 W, to 150 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
G
S
CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T
DSS
DGO
GS
D
P
D
stg
J
125 Vdc
125 Vdc
±40 Vdc
16 Adc
300
1.71
–65 to +150 °C
200 °C
Watts
W/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
θJC
0.6 °C/W
REV 8
Motorola, Inc. 1997
MRF150MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted.)
C
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) I
Gate–Body Leakage Current (VGS = 20 V, VDS = 0) I
(BR)DSS
DSS
GSS
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) V
Forward Transconductance (VDS = 10 V, ID = 5.0 A) g
GS(th)
DS(on)
fs
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
iss
oss
rss
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain f = 30 MHz
(VDD = 50 V, P
Drain Efficiency
(VDD = 50 V, P
ID (Max) = 3.75 A)
Intermodulation Distortion (1)
(VDD = 50 V, P
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA)
Load Mismatch
(VDD = 50 V, P
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
= 150 W (PEP), IDQ = 250 mA) f = 150 MHz
out
= 150 W (PEP), f = 30; 30.001 MHz,
out
= 150 W (PEP),
out
= 150 W (PEP), f = 30; 30.001 MHz,
out
G
ps
η — 45 — %
IMD
(d3)
IMD
(d11)
ψ
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, P
f2 = 30.001 MHz, IDQ = 3.0 A)
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
= 50 W (PEP), f1 = 30 MHz,
out
IMD
G
PS
IMD
(d3)
(d9–13)
125 — — Vdc
— — 5.0 mAdc
— — 1.0 µAdc
1.0 3.0 5.0 Vdc
1.0 3.0 5.0 Vdc
4.0 7.0 — mhos
— 400 — pF
— 240 — pF
— 40 — pF
—
—
—
—
—
—
—
17
8.0
–32
–60
No Degradation in Output Power
20
–50
–75
—
—
—
—
—
—
—
dB
dB
dB
BIAS
0–12 V
RF
INPUT
MRF150
2
+
–
T1
C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or
Monolythic with Short Leads
C3 — 200 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C4 — 15 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C5
C1
R3
C6 C8 C9 C10
R1
DUT
C2
R2
Figure 1. 30 MHz Test Circuit (Class AB)
C3
L1
C7
T2
C4
C10 — 10 µF/100 V Electrolytic
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel
T1 — 9:1 Broadband Transformer
T2 — 1:9 Broadband Transformer
L2
+
–
MOTOROLA RF DEVICE DATA
+
50 V
–
RF
OUTPUT
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