Motorola MRF150 Datasheet



SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

   

N–Channel Enhancement–Mode

Designed primarily for linear large–signal output stages up to150 MHz

frequency range.

• Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)

• Superior High Order IMD

• IMD

• IMD

• 100% Tested For Load Mismatch At All Phase Angles With

30:1 VSWR

(150 W PEP) — –32 dB (Typ)

(d3)

(150 W PEP) — –60 dB (Typ)

(d1 1)

D

Order this document

by MRF150/D



150 W, to 150 MHz

N–CHANNEL MOS

LINEAR RF POWER

FET

G

S

CASE 211–11, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

DSS

DGO

GS

D

P

D

stg

J

125 Vdc
125 Vdc
±40 Vdc

16 Adc

300

1.71

–65 to +150 °C

200 °C

Watts

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

θJC

0.6 °C/W

REV 8

 Motorola, Inc. 1997

MRF150MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted.)

C

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) I
Gate–Body Leakage Current (VGS = 20 V, VDS = 0) I

(BR)DSS

DSS
GSS

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) V
Forward Transconductance (VDS = 10 V, ID = 5.0 A) g

GS(th)

DS(on)

fs

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C

iss

oss

rss

FUNCTIONAL TESTS (SSB)

Common Source Amplifier Power Gain f = 30 MHz

(VDD = 50 V, P
Drain Efficiency

(VDD = 50 V, P

ID (Max) = 3.75 A)
Intermodulation Distortion (1)

(VDD = 50 V, P

f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA)
Load Mismatch

(VDD = 50 V, P

IDQ = 250 mA, VSWR 30:1 at all Phase Angles)

= 150 W (PEP), IDQ = 250 mA) f = 150 MHz

out

= 150 W (PEP), f = 30; 30.001 MHz,

out

= 150 W (PEP),

out

= 150 W (PEP), f = 30; 30.001 MHz,

out

G

ps

η — 45 — %

IMD

(d3)

IMD

(d11)

ψ

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(VDD = 50 V, P

f2 = 30.001 MHz, IDQ = 3.0 A)

NOTE:

1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

= 50 W (PEP), f1 = 30 MHz,

out

IMD

G

PS

IMD

(d3)

(d9–13)

125 — — Vdc

— — 5.0 mAdc
— — 1.0 µAdc

1.0 3.0 5.0 Vdc

1.0 3.0 5.0 Vdc

4.0 7.0 — mhos

— 400 — pF
— 240 — pF
— 40 — pF

—
—

—
—

—
—
—

17

8.0

–32
–60

No Degradation in Output Power

20
–50
–75

—
—

—
—

—
—
—

dB

dB

dB

BIAS

0–12 V

RF

INPUT

MRF150
2

+
–

T1

C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or

Monolythic with Short Leads

C3 — 200 pF Unencapsulated Mica or Dipped Mica

with Short Leads

C4 — 15 pF Unencapsulated Mica or Dipped Mica

with Short Leads

C5

C1

R3

C6 C8 C9 C10

R1

DUT

C2

R2

Figure 1. 30 MHz Test Circuit (Class AB)

C3

L1

C7

T2

C4

C10 — 10 µF/100 V Electrolytic
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel
T1 — 9:1 Broadband Transformer
T2 — 1:9 Broadband Transformer

L2

+
–

MOTOROLA RF DEVICE DATA

+

50 V

–

RF

OUTPUT