Motorola MRF148 Datasheet

1

MRF148MOTOROLA RF DEVICE DATA

The RF MOSFET Line

   

N–Channel Enhancement–Mode

Designed for power amplifier applications in industrial, commercial and

amateur radio equipment to 175 MHz.

• Superior High Order IMD

• Specified 50 Volts, 30 MHz Characteristics

Output Power = 30 Watts
Power Gain = 18 dB (Typ)
Efficiency = 40% (Typ)

• IMD

(d3)

(30 W PEP) — –35 dB (Typ)

• IMD

(d11)

(30 W PEP) — –60 dB (Typ)

• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V

DSS

120 Vdc

Drain–Gate Voltage V

DGO

120 Vdc

Gate–Source Voltage V

GS

±40 Vdc

Drain Current — Continuous I

D

6.0 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

115

0.66

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

Operating Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

1.52 °C/W

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Order this document

by MRF148/D



SEMICONDUCTOR TECHNICAL DATA



30 W, to 175 MHz

N–CHANNEL MOS

LINEAR RF POWER

FET

CASE 211–07, STYLE 2

 Motorola, Inc. 1995

D

G

S

REV 1

MRF148
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 10 mA) V

(BR)DSS

125 — — Vdc

Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) I

DSS

— — 1.0 mAdc

Gate–Body Leakage Current (VGS = 20 V, VDS = 0) I

GSS

— — 100 nAdc

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 10 mA) V

GS(th)

1.0 3.0 5.0 Vdc

Drain–Source On–Voltage (VGS = 10 V, ID = 2.5 A) V

DS(on)

1.0 3.0 5.0 Vdc

Forward Transconductance (VDS = 10 V, ID = 2.5 A) g

fs

0.8 1.2 — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C

iss

— 50 — pF

Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C

oss

— 35 — pF

Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C

rss

— 8.0 — pF

FUNCTIONAL TESTS (SSB)

Common Source Amplifier Power Gain (30 MHz)

(VDD = 50 V, P

out

= 30 W (PEP), IDQ = 100 mA) (175 MHz)

G

ps

—
—

18
15

—
—

dB

Drain Efficiency (30 W PEP)

(VDD = 50 V, f = 30 MHz, IDQ = 100 mA) (30 W CW)

η —

—

40
50

—
—

%

Intermodulation Distortion

(VDD = 50 V, P

out

= 30 W (PEP),

f = 30; 30.001 MHz, IDQ = 100 mA)

IMD

(d3)

IMD

(d11)

—
—

–35
–60

—
—

dB

Load Mismatch

(VDD = 50 V, P

out

= 30 W (PEP), f = 30; 30.001 MHz,

IDQ = 100 mA, VSWR 30:1 at all Phase Angles)

ψ

No Degradation in Output Power

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(VDD = 50 V, P

out

= 10 W (PEP), f1 = 30 MHz,

f2 = 30.001 MHz, IDQ = 1.0 A)

G

PS

IMD

(d3)

IMD

(d9–13)

—
—
—

20
–50
–70

—
—
—

dB

NOTE:

1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

Figure 1. 2.0 to 50 MHz Broadband Test Circuit

C1, C2, C3, C4, C5, C6 — 0.1 µF Ceramic Chip or Equivalent
C7 — 10 µF, 100 V Electrolytic
C8 — 100 pF Dipped Mica
L1 — VK200 20/4B Ferrite Choke or Equivalent (3.0 µH)
L2 — Ferrite Bead(s), 2.0 µH

R1, R2 — 200 Ω, 1/2 W Carbon
R3 — 4.7 Ω, 1/2 W Carbon
R4 — 470 Ω, 1.0 W Carbon
T1 — 4:1 Impedance Transformer
T2 — 1:2 Impedance Transformer

RF

OUTPUT

RF

INPUT

BIAS

0– 10 V

50 V

+

C1

–

+
–

C4 C5 C6 C7

C2

C3

R1

R3

T1

T2

DUT

L1

L2

R4

C8

R2