Motorola MRF141 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

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N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.

• Guaranteed Performance at 30 MHz, 28 V:

Output Power — 150 W
Gain — 18 dB (22 dB Typ)
Efficiency — 40%

• Typical Performance at 175 MHz, 50 V:

Output Power — 150 W
Gain — 13 dB

• Low Thermal Resistance

• Ruggedness Tested at Rated Output Power

• Nitride Passivated Die for Enhanced Reliability

D

Order this document

by MRF141/D

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150 W, 28 V, 175 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

G

S

CASE 211–11, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

DSS

DGO

GS

D

P

D

stg

J

65 Vdc
65 Vdc

±40 Vdc

16 Adc

300

1.71

–65 to +150 °C

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

θJC

0.6 °C/W

Watts

W/°C

REV 8

 Motorola, Inc. 1997

MRF141MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted)

C

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) I
Gate–Body Leakage Current (VGS = 20 V, VDS = 0) I

(BR)DSS

DSS
GSS

ON CHARACTERISTICS (1)

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) V
Forward Transconductance (VDS = 10 V, ID = 5.0 A) g

GS(th)

DS(on)

fs

DYNAMIC CHARACTERISTICS (1)

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C

iss

oss

rss

FUNCTIONAL TESTS

Common Source Amplifier Power Gain, f = 30; 30.001 MHz

(VDD = 28 V, P
Drain Efficiency

(VDD = 28 V, P

IDQ = 250 mA, ID (Max) = 5.95 A)
Intermodulation Distortion (1)

(VDD = 28 V, P

f2 = 30.001 MHz, IDQ = 250 mA)
Load Mismatch

(VDD = 28 V, P

IDQ = 250 mA, VSWR 30:1 at all Phase Angles)

= 150 W (PEP), IDQ = 250 mA) f = 175 MHz

out

= 150 W (PEP), f = 30; 30.001 MHz,

out

= 150 W (PEP), f = 30 MHz,

out

= 150 W (PEP), f1 = 30; 30.001 MHz,

out

G

ps

η 40 45 — %

IMD

(d3)

IMD

(d11)

ψ

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(VDD = 28 V, P

f2 = 30.001 MHz, IDQ = 4.0 A)

NOTE:

1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

= 50 W (PEP), f1 = 30 MHz,

out

IMD

G

PS

IMD

(d3)

(d9–13)

65 — — Vdc
— — 5.0 mAdc
— — 1.0 µAdc

1.0 3.0 5.0 Vdc

0.1 0.9 1.5 Vdc

5.0 7.0 — mhos

— 350 — pF
— 420 — pF
— 35 — pF

16
—

—
—

—
—
—

20
10

–30
–60

No Degradation in Output Power

23
–50
–75

—
—

–28

—

—
—
—

dB

dB

dB

+

BIAS

0–12 V

–C5

RF INPUT

C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or

C3 — Arco 469
C4 — 820 pF Unencapsulated Mica or Dipped Mica

C10 — 10 µF/100 V Electrolytic
C11 — 1 µF, 50 V, Tantalum
C12 — 330 pF, Dipped Mica (Short leads)

C11 R4

R3

T1

Monolythic with Short Leads

with Short Leads

C2

R1

C6

D.U.T.

R2

Figure 1. 30 MHz Test Circuit (Class AB)

MRF141
2

C4

L1

C7

T2

C3

L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 1.0 Ω/1.0 W Carbon or Parallel Two 2 Ω, 1/2 W Resistors
R4 — 1 kΩ/1/2 W Carbon
T1 — 16:1 Broadband Transformer
T2 — 1:25 Broadband Transformer
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,

C8

C12

L2

er = 5

C9

+
–

MOTOROLA RF DEVICE DATA

C10

+

28 V

–

RF
OUTPUT

TYPICAL CHARACTERISTICS

100

10

, DRAIN CURRENT (AMPS)

D

I

1

1 100

TC = 25°C

10

VDS, DRAIN–TO–SOURCE VOL TAGE (VOL TS)

Figure 2. DC Safe Operating Area Figure 3. Gate–Source Voltage versus

2000

VDS = 20 V

10 V

1.04

1.03

1.02

1.01
1

0.99

0.98

0.97

0.96

0.95

0.94

0.93

0.92

, GATE-SOURCE VOLTAGE (NORMALIZED)

0.91

GS

0.9
–25 100

25 50 750

TC, CASE TEMPERATURE (

ID = 5 A

1 A

0.5 A

°

C)

4 A

0.25 A

Case T emperature

200

0

C

oss

C

iss

2 A

1000

, UNITY GAIN FREQUENCY (MHz)

T

f

0

26812161814410

020

I

, DRAIN CURRENT (AMPS)

D

Figure 4. Common Source Unity Gain Frequency

versus Drain Current

30

25

20

15

, POWER GAIN (dB)

PS

G

10

5

2 010 100 200

VDD = 28 V
IDQ = 250 mA
P

= 150 W

out

f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS)

200

C, CAPACITANCE (pF) V

20

0 5 10 15 20 25

VDS, DRAIN–SOURCE VOLTAGE (VOL TS)

C

rss

Figure 5. Capacitance versus

Drain–Source Voltage

300

200

100

0

0 5 10 15 20 25

300

, OUTPUT POWER (WATTS)

200

out

P

100

0

12345

f = 175 MHz
VDD = 28 V
IDQ = 250 mA

f = 30 MHz
VDD = 28 V
IDQ = 250 mA

Figure 6. Power Gain versus Frequency Figure 7. Output Power versus Input Power

MRF141MOTOROLA RF DEVICE DATA

3