Motorola MRF140 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

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N–Channel Enhancement–Mode

Designed primarily for linear large–signal output stages up to 150 MHz

frequency range.

• Specified 28 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 15 dB (Typ)
Efficiency = 40% (Typ)

• Superior High Order IMD

• IMD

• IMD

• 100% Tested For Load Mismatch At All Phase Angles With

30:1 VSWR

(150 W PEP) — –30 dB (Typ)

(d3)

(150 W PEP) — –60 dB (Typ)

(d1 1)

D

Order this document

by MRF140/D



150 W, to 150 MHz
N–CHANNEL MOS

LINEAR RF POWER

FET

G

S

CASE 211–11, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

DSS

DGO

GS

D

P

D

stg

J

65 Vdc
65 Vdc

±40 Vdc

16 Adc

300

1.7

–65 to +150 °C

200 °C

Watts

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

θJC

0.6 °C/W

REV 8

 Motorola, Inc. 1997

MRF140MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted.)

C

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V
Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) I
Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0) I

(BR)DSS

DSS
GSS

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 10 Adc) V
Forward Transconductance (VDS = 10 V, ID = 5.0 A) g

GS(th)

DS(on)

fs

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C

iss

oss

rss

FUNCTIONAL TESTS (SSB)

Common Source Amplifier Power Gain (30 MHz)

(VDD = 28 V, P
Drain Efficiency

(VDD = 28 V, P

ID (Max) = 6.5 A)
Intermodulation Distortion (1)

(VDD = 28 V, P

f2 = 30.001 MHz, IDQ = 250 mA)
Load Mismatch

(VDD = 28 V, P

IDQ = 250 mA, VSWR 30:1 at all Phase Angles)

NOTE:

1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

= 150 W (PEP), IDQ = 250 mA) (150 MHz)

out

= 150 W (PEP), f = 30; 30.001 MHz,

out

= 150 W (PEP), f1 = 30 MHz,

out

= 150 W (PEP), f = 30; 30.001 MHz,

out

G

ps

η — 40 — %

IMD

(d3)

IMD

(d11)

ψ

65 — — Vdc
— — 5.0 mAdc
— — 1.0 µAdc

1.0 3.0 5.0 Vdc

0.1 0.9 1.5 Vdc

4.0 7.0 — mhos

— 450 — pF
— 400 — pF
— 75 — pF

—
—

—
—

15

6.0

–30
–60

No Degradation in Output Power

—
—

—
—

dB

dB

+

BIAS

0–12 V

–

RF INPUT

C11 R4

T1

C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or

Monolythic with Short Leads
C3 — Arco 469
C4 — 820 pF Unencapsulated Mica or Dipped Mica

with Short Leads
C10 — 10 µF/100 V Electrolytic
C11 — 1 µF, 50 V, Tantalum
C12 — 330 pF, Dipped Mica (Short leads)

C5

R1

R3

C2

C6

DUT

R2

Figure 1. 30 MHz Test Circuit (Class AB)

C4

C7

C3

L1

C8

T2

C12

L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 1.0 Ω/1.0 W Carbon or Parallel Two 2 Ω, 1/2 W Resistors
R4 — 1 kΩ/1/2 W Carbon
T1 — 16:1 Broadband Transformer
T2 — 1:25 Broadband Transformer

L2

C9

+
–

C10

+
–

28 V

RF
OUTPUT

MRF140
2

MOTOROLA RF DEVICE DATA