Motorola MRF137 Datasheet

1

MRF137MOTOROLA RF DEVICE DATA

The RF MOSFET Line

   

N–Channel Enhancement–Mode

. . . designed for wideband large–signal output and driver stages up to
400 MHz range.

• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 30 Watts
Minimum Gain = 13 dB
Efficiency — 60% (Typical)

• Small–Signal and Large–Signal Characterization

• Typical Performance at 400 MHz, 28 Vdc, 30 W

Output = 7.7 dB Gain

• 100% Tested For Load Mismatch At All Phase Angles

With 30:1 VSWR

• Low Noise Figure — 1.5 dB (Typ) at 1.0 A, 150 MHz

• Excellent Thermal Stability, Ideally Suited For Class A

Operation

• Facilitates Manual Gain Control, ALC and Modulation

Techniques

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V

DSS

65 Vdc

Drain–Gate Voltage

(RGS = 1.0 MΩ)

V

DGR

65 Vdc

Gate–Source Voltage V

GS

±40 Vdc

Drain Current — Continuous I

D

5.0 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

100

0.571

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

Operating Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

1.75 °C/W

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Order this document

by MRF137/D



SEMICONDUCTOR TECHNICAL DATA



30 W, to 400 MHz

N–CHANNEL MOS

BROADBAND RF POWER

FET

CASE 211–07, STYLE 2

 Motorola, Inc. 1994

D

G

S

REV 6

MRF137
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 10 mA) V

(BR)DSS

65 — — Vdc

Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) I

DSS

— — 4.0 mAdc

Gate–Source Leakage Current (VGS = 20 V, VDS = 0) I

GSS

— — 1.0 µAdc

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) V

GS(th)

1.0 3.0 6.0 Vdc

Forward Transconductance (VDS = 10 V, ID = 500 mA) g

fs

500 750 — mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C

iss

— 48 — pF

Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C

oss

— 54 — pF

Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C

rss

— 11 — pF

FUNCTIONAL CHARACTERISTICS

Noise Figure

(VDS = 28 Vdc, ID = 1.0 A, f = 150 MHz)

NF — 1.5 — dB

Common Source Power Gain

(VDD = 28 Vdc, P

out

= 30 W, f = 150 MHz (Figure 1)

IDQ = 25 mA) f = 400 MHz (Figure 14)

G

ps

13
—

16

7.7

—
—

dB

Drain Efficiency (Figure 1)

(VDD = 28 Vdc, P

out

= 30 W, f = 150 MHz, IDQ = 25 mA)

η 50 60 — %

Electrical Ruggedness (Figure 1)

(VDD = 28 Vdc, P

out

= 30 W, f = 150 MHz, IDQ = 25 mA,

VSWR 30:1 at All Phase Angles)

ψ

No Degradation in Output Power

Figure 1. 150 MHz Test Circuit

C1 — Arco 403, 3.0–35 pF, or equivalent
C2 — Arco 406, 15–115 pF, or equivalent
C3 — 56 pF Mini–Unelco, or equivalent
C4 — Arco 404, 8.0–60 pF, or equivalent
C5 — 680 pF, 100 Mils Chip
C6 — 0.01 µF, 100 V, Disc Ceramic
C7 — 100 µF, 40 V
C8 — 0.1 µF, 50 V, Disc Ceramic
C9, C10 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener

L1 — 2 Turns, 0.29″ ID, #18 AWG Enamel, Closewound
L2 — 1–1/4 Turns, 0.2″ ID, #18 AWG Enamel, Closewound
L3 — 2 Turns, 0.2″ ID, #18 AWG Enamel, Closewound
RFC1 — 20 Turns, 0.30″ ID, #20 AWG Enamel, Closewound
RFC2 — Ferroxcube VK–200 — 19/4B
R1 — 10 kΩ, 1/2 W Thin Film
R2 — 10 kΩ, 1/4 W
R3 — 10 Turns, 10 kΩ
R4 — 1.8 kΩ, 1/2 W
Board — G10, 62 Mils

BIAS

ADJUST

R2

C6

D1

R4

C7

+
–

C8

RFC1

C9

RFC2

C10

+ VDD = 28 V

RF

INPUT

RF

OUTPUT

C2

C1

L1

R1

DUT

L2 L3

C5

C4

C3

R3

3

MRF137MOTOROLA RF DEVICE DATA

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power

Figure 4. Output Power versus Input Power Figure 5. Output Power versus Supply Voltage

Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage

50

40

30

20

10

0

0.50
Pin, INPUT POWER (WATTS)

P , OUTPUT POWER (WATTS)

out

1 1.5 2

150 MHz

f = 100 MHz

200 MHz

VDD = 28 V
IDQ = 25 mA

20

15

10

5

0

0

Pin, INPUT POWER (WATTS)

P , OUTPUT POWER (WATTS)

out

1 2 3 4

VDD = 13.5 V
IDQ = 25 mA

f = 100 MHz

150 MHz

200 MHz

40

30

20

10

0

20

Pin, INPUT POWER (WATTS)

P , OUTPUT POWER (WATTS)

out

4 6 8 10

f = 400 MHz
IDQ = 25 mA

VDD = 28 V

VDD = 13.5 V

50

40

30

20

10

0

1612

VDD, SUPPLY VOLTAGE (VOLTS)

P , OUTPUT POWER (WATTS)

out

20 24 28

Pin = 1 W

IDQ = 25 mA
f = 100 MHz

0.25 W

0.5 W

50

40

30

20

10

0

1612

VDD, SUPPLY VOLTAGE (VOLTS)

P , OUTPUT POWER (WATTS)

out

20 24 28

Pin = 1.5 W

0.75 W

0.5 W

IDQ = 25 mA
f = 150 MHz

50

40

30

20

10

0

1612

VDD, SUPPLY VOLTAGE (VOLTS)

P , OUTPUT POWER (WATTS)

out

20 24 28

Pin = 2 W

1.5 W

0.75 W

IDQ = 25 mA
f = 200 MHz