Motorola MRF136Y, MRF136 Datasheet

1

MRF136 MRF136YMOTOROLA RF DEVICE DATA

The RF MOSFET Line

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   

. . . designed for wideband large–signal amplifier and oscillator applications up
to 400 MHz range, in either single ended or push–pull configuration.

• Guaranteed 28 Volt, 150 MHz Performance

MRF136 MRF136Y

Output Power = 15 Watts Output Power = 30 Watts
Narrowband Gain = 16 dB (Typ) Broadband Gain = 14 dB (Typ)
Efficiency = 60% (Typical) Efficiency = 54% (Typical)

• Small–Signal and Large–Signal
Characterization

• 100% Tested For Load
Mismatch At All Phase

Angles With 30:1 VSWR

• Space Saving Package For
Push–Pull Circuit
Applications — MRF136Y

• Excellent Thermal Stability,
Ideally Suited For Class A
Operation

• Facilitates Manual Gain
Control, ALC and
Modulation Techniques

MAXIMUM RATINGS

Value

Rating

Symbol

MRF136 MRF136Y

Unit

Drain–Source Voltage V

DSS

65 65 Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ) V

DGR

65 65 Vdc

Gate–Source Voltage V

GS

±40 Vdc

Drain Current — Continuous I

D

2.5 5.0 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

55

0.314

100

0.571

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

Operating Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Max

Characteristic

Symbol

MRF136 MRF136Y

Unit

Thermal Resistance, Junction to Case R

θJC

3.2 1.75 °C/W

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Order this document

by MRF136/D



SEMICONDUCTOR TECHNICAL DATA





15 W, 30 W, to 400 MHz

N–CHANNEL

MOS BROADBAND

RF POWER FETs

CASE 211–07, STYLE 2

MRF136

CASE 319B–02, STYLE 1

MRF136Y

 Motorola, Inc. 1994

D

G

S

D

G

S

(FLANGE)

MRF136

MRF136Y

D

G

REV 6

MRF136 MRF136Y
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0, ID = 5.0 mA)

V

(BR)DSS

65 — — Vdc

Zero–Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)

I

DSS

— — 2.0 mAdc

Gate–Source Leakage Current

(VGS = 40 V, VDS = 0)

I

GSS

— — 1.0 µAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = 10 V, ID = 25 mA)

V

GS(th)

1.0 3.0 6.0 Vdc

Forward Transconductance

(VDS = 10 V, ID = 250 mA)

g

fs

250 400 — mmhos

DYNAMIC CHARACTERISTICS (1)

Input Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

C

iss

— 24 — pF

Output Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

C

oss

— 27 — pF

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

C

rss

— 5.5 — pF

FUNCTIONAL CHARACTERISTICS (2)

Noise Figure MRF136

(VDS = 28 Vdc, ID = 500 mA, f = 150 MHz)

NF — 1.0 — dB

Common Source Power Gain (Figure 1) MRF136

(VDD = 28 Vdc, P

out

= 15 W, f = 150 MHz, IDQ = 25 mA)

G

ps

13 16 — dB

Common Source Power Gain (Figure 2) MRF136Y

(VDD = 28 Vdc, P

out

= 30 W, f = 150 MHz, IDQ = 100 mA)

G

ps

12 14 — dB

Drain Efficiency (Figure 1) MRF136

(VDD = 28 Vdc, P

out

= 15 W, f = 150 MHz, IDQ = 25 mA)

η 50 60 — %

Drain Efficiency (Figure 2) MRF136Y

(VDD = 28 Vdc, P

out

= 30 W, f = 150 MHz, IDQ = 100 mA)

η 50 54 — %

Electrical Ruggedness (Figure 1) MRF136

(VDD = 28 Vdc, P

out

= 15 W, f = 150 MHz, IDQ = 25 mA,

VSWR 30:1 at all Phase Angles)

ψ

No Degradation in Output Power

Electrical Ruggedness (Figure 2) MRF136Y

(VDD = 28 Vdc, P

out

= 30 W, f = 150 MHz, IDQ = 100 mA,

VSWR 30:1 at all Phase Angles)

ψ

No Degradation in Output Power

NOTES:

1. For MRF136Y, each side measured separately.

2. For MRF136Y measured in push–pull configuration.

3

MRF136 MRF136YMOTOROLA RF DEVICE DATA

Figure 1. 150 MHz Test Circuit (MRF136)

Figure 2. 30–150 MHz Test Circuit (MRF136Y)

C1, C2 — Arco 406, 15–115 pF or Equivalent
C3 — Arco 404, 8–60 pF or Equivalent
C4 — 43 pF Mini–Unelco or Equivalent
C5 — 24 pF Mini–Unelco or Equivalent
C6 — 680 pF, 100 Mils Chip
C7 — 0.01 µF Ceramic
C8 — 100 µF, 40 V
C9 — 0.1 µF Ceramic
C10, C11 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener

L1 — 2 Turns, 0.29″ ID, #18 AWG, 0.10″ Long
L2 — 2 Turns, 0.23″ ID, #18 AWG, 0.10″ Long
L3 — 2–1/4 Turns, 0.29″ ID, #18 AWG, 0.125″ Long
RFC1 — 20 Turns, 0.30″ ID, #20 AWG Enamel Closewound
RFC2 — Ferroxcube VK–200 — 19/4B
R1 — 27 Ω, 1 W Thin Film
R2 — 10 kΩ, 1/4 W
R3 — 10 Turns, 10 kΩ
R4 — 1.8 kΩ, 1/2 W
Board Material — 0.062″ G10, 1 oz. Cu Clad, Double Sided

C1 — 5.0 pF
C2, C3, C4, C6, C7, C9, C11 — 0.1 µF Ceramic
C5, C8 — 680 pF Feedthru
C10 — 15 pF
D1 — 1N4740 Motorola Zener
RFC1 — 17 Turns, #24 AWG Wound on R5
RFC2 — Ferroxcube VK–200–19/4B or Equivalent
R1 — 10 kΩ, 1/4 W
R2, R3 — 560 Ω, 1/2 W
R4 — 10 Turns, 10 kΩ

R5 — 56 kΩ, 1 W
R6 — 1.6 kΩ, 1/4 W
T1 — Primary Winding — 3 Turns #28 Enameled Wire.

T1 — Secondary Winding — 2 Turns #28 Enameled Wire.
T1 — Both windings wound through a Fair/Rite Balun 65 core.
T1 — Part #2865002402.

T2 — 1:1 Transformer Wound Bifilar — 2 Turns Twisted Pair

T1 — #24 Enameled Wire through a Indiana General Balun Q1
T1 — core. Part #18006–1–Q1. Primary winding center tapped.

Board Material — 0.062″ G10, 1 oz. Cu Clad, Double Sided

R4

C10

D1

C8

+

RFC1

C7

C1

L1

R2

R1

C9

C4

C3

C2

RF INPUT

L2

RFC2

L3

DUT

–

RF OUTPUT

C6

C5

C11

VDD = +28 V

RF OUTPUT

VDD = +28 V

RFC2

C8

C5

C7

R4

D1

C11

RFC1

R6

R5

R2

C3

R3

C6

C10C9

C4

DUT

R3

C1

R1

C2

D

T2T1

S

D

G

G

BA

BIAS
ADJUST

BIAS

ADJUST

RF INPUT

MRF136 MRF136Y
4

MOTOROLA RF DEVICE DATA

400

Figure 3. Output Power versus Input Power Figure 4. Output Power versus Input Power

Figure 5. Output Power versus Input Power Figure 6. Output Power versus Supply Voltage

Figure 7. Output Power versus Supply Voltage Figure 8. Output Power versus Supply Voltage

2020
18
16
14
12
10

8
6
4

2
0

0 200 600 800 1000

f = 100 MHz

f = 400 MHz
IDQ = 25 mA

150 MHz 200 MHz

f = 100 MHz

VDD = 13.5 V
IDQ = 25 mA

Pin, INPUT POWER (MILLWATTS)

P

out

, OUTPUT POWER (WATTS)

20
18
16
14
12
10

8
6
4

2
0

0 1 2 3 4

Pin, INPUT POWER (WATTS)

P

out

, OUTPUT POWER (WATTS)

10

9
8
7
6
5
4
3
2

1
0

0 200 400 600 800 1000

Pin, INPUT POWER (MILLWATTS)

P

out

, OUTPUT POWER (WATTS)

200 MHz

150 MHz

24
21
18
15
12

9
6
3

0

12 16 20 24 28

VDD, SUPPLY VOLTAGE (VOLTS)

P

out

, OUTPUT POWER (WATTS)

14 18 22 26

400 mW

200 mW

0.7 W

VDD = 28 V

VDD = 13.5 V

IDQ = 25 mA
f = 100 MHz

Pin = 600 mW

12 16 20 24 28

VDD, SUPPLY VOLTAGE (VOLTS)

P

out

, OUTPUT POWER (WATTS)

14 18 22 26

600 mW

300 mW

IDQ = 25 mA
f = 150 MHz

Pin = 900 mW

24
21
18
15
12

9
6
3

0

12 16 20 24 28

VDD, SUPPLY VOLTAGE (VOLTS)

P

out

, OUTPUT POWER (WATTS)

14 18 22 26

0.4 W

Pin = 1 W

IDQ = 25 mA
f = 200 MHz

VDD = 28 V
IDQ = 25 mA

24
21
18
15
12

9
6
3

0