Motorola MRF134 Datasheet

1

MRF134MOTOROLA RF DEVICE DATA

The RF MOSFET Line

   

N–Channel Enhancement–Mode

. . . designed for wideband large–signal amplifier and oscillator applications up
to 400 MHz range.

• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 5.0 Watts
Minimum Gain = 11 dB
Efficiency — 55% (Typical)

• Small–Signal and Large–Signal Characterization

• Typical Performance at 400 MHz, 28 Vdc, 5.0 W

Output = 10.6 dB Gain

• 100% Tested For Load Mismatch At All Phase Angles

With 30:1 VSWR

• Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz

• Excellent Thermal Stability, Ideally Suited For Class A

Operation

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V

DSS

65 Vdc

Drain–Gate Voltage

(RGS = 1.0 MΩ)

V

DGR

65 Vdc

Gate–Source Voltage V

GS

±40 Vdc

Drain Current — Continuous I

D

0.9 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

17.5

0.1

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal Resistance, Junction to Case R

θJC

10 °C/W

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Order this document

by MRF134/D



SEMICONDUCTOR TECHNICAL DATA



5.0 W, to 400 MHz

N–CHANNEL MOS

BROADBAND RF POWER

FET

CASE 211–07, STYLE 2

 Motorola, Inc. 1994

D

G

S

REV 6

MRF134
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 5.0 mA) V

(BR)DSS

65 — — Vdc

Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) I

DSS

— — 1.0 mAdc

Gate–Source Leakage Current (VGS = 20 V, VDS = 0) I

GSS

— — 1.0 µAdc

ON CHARACTERISTICS

Gate Threshold Voltage (ID = 10 mA, VDS = 10 V) V

GS(th)

1.0 3.5 6.0 Vdc

Forward Transconductance (VDS = 10 V, ID = 100 mA) g

fs

80 110 — mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

C

iss

— 7.0 — pF

Output Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

C

oss

— 9.7 — pF

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

C

rss

— 2.3 — pF

FUNCTIONAL CHARACTERISTICS

Noise Figure

(VDS = 28 Vdc, ID = 200 mA, f = 150 MHz)

NF — 2.0 — dB

Common Source Power Gain

(VDD = 28 Vdc, P

out

= 5.0 W, IDQ = 50 mA)

f = 150 MHz (Fig. 1)
f = 400 MHz (Fig. 14)

G

ps

11
—

14

10.6

—
—

dB

Drain Efficiency (Fig. 1)

(VDD = 28 Vdc, P

out

= 5.0 W, f = 150 MHz, IDQ = 50 mA)

η 50 55 — %

Electrical Ruggedness (Fig. 1)

(VDD = 28 Vdc, P

out

= 5.0 W, f = 150 MHz, IDQ = 50 mA,

VSWR 30:1 at all Phase Angles)

ψ

No Degradation in Output Power

Figure 1. 150 MHz Test Circuit

C1, C4 — Arco 406, 15–115 pF
C2 — Arco 403, 3.0–35 pF
C3 — Arco 402, 1.5–20 pF
C5, C6, C7, C8, C12 — 0.1 µF Erie Redcap
C9 — 10 µF, 50 V
C10, C11 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener
L1 — 3 Turns, 0.310″ ID, #18 AWG Enamel, 0.2″ Long
L2 — 3–1/2 Turns, 0.310″ ID, #18 AWG Enamel, 0.25″ Long

L3 — 20 Turns, #20 AWG Enamel Wound on R5
L4 — Ferroxcube VK–200 — 19/4B
R1 — 68 Ω, 1.0 W Thin Film
R2 — 10 kΩ, 1/4 W
R3 — 10 Turns, 10 kΩ Beckman Instruments 8108
R4 — 1.8 kΩ, 1/2 W
R5 — 1.0 MΩ, 2.0 W Carbon
Board — G10, 62 mils

R3*

R4

L4

L3

L1

L2

D1

C8 C9

C10 C11

C12

C4

C3

C6C5

R2

C2

C1

RF INPUT

RF OUTPUT

+ VDD = 28 V

DUT

R5

+
–

C7

R1

*Bias Adjust

3

MRF134MOTOROLA RF DEVICE DATA

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power

Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage

Figure 6. Output Power versus Supply Voltage Figure 7. Output Power versus Supply Voltage

10

8

6

4

2

0

10008006004002000

Pin, INPUT POWER (MILLWATTS)

P , OUTPUT POWER (WATTS)

out

5

4

3

2

1

0

10008006004002000

Pin, INPUT POWER (MILLWATTS)

P , OUTPUT POWER (WATTS)

out

8

6

4

2

0

1412

VDD, SUPPLY VOLTAGE (VOLTS)

P , OUTPUT POWER (WATTS)

out

16 18 20 22 24 26 28

8

6

4

2

0

1412

VDD, SUPPLY VOLTAGE (VOLTS)

P , OUTPUT POWER (WATTS)

out

16 18 20 22 24 26 28

8

6

4

2

0

1412

VDD, SUPPLY VOLTAGE (VOLTS)

P , OUTPUT POWER (WATTS)

out

16 18 20 22 24 26 28

8

6

4

2

0

1412

VDD, SUPPLY VOLTAGE (VOLTS)

P , OUTPUT POWER (WATTS)

out

16 18 20 22 24 26 28

150
400

225

150
225

400

Pin = 600 mW

300 mW

150 mW

IDQ = 50 mA
f = 100 MHz

Pin = 800 mW

400 mW

200 mW

IDQ = 50 mA
f = 150 MHz

Pin = 800 mW

400 mW

200 mW

IDQ = 50 mA
f = 225 MHz

Pin = 800 mW
IDQ = 50 mA
f = 400 MHz

400 mW

200 mW

f = 100 MHz

f = 100 MHz

VDD = 13.5 V
IDQ = 50 mA

VDD = 28 V
IDQ = 50 mA