Motorola MRF1150MA Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

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by MRF1150MA/D

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Designed for Class B and C common base amplifier applications in short

pulse T ACAN, IFF, and DME transmitters.

• Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 150 Watts Peak
Minimum Gain = 7.8 dB

• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Industry Standard Package

• Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Internal Input Matching for Broadband Operation

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Peak (1) I
Total Device Dissipation @ TC = 25°C (1) (2)

Derate above 25°C

Storage Temperature Range T

CBO
EBO

C

P

D

stg

70 Vdc

4.0 Vdc
12 Adc

583

3.33

–65 to +150 °C

Watts

W/°C




150 W PEAK, 960–1215 MHz

MICROWAVE POWER

TRANSISTORS

NPN SILICON

CASE 332–04, STYLE 1

(MRF1150MA)

CASE 332A–03, STYLE 1

(MRF1150MB)

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (3) R

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

θJC

0.3 °C/W

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage

(IC = 50 mAdc, VBE = 0)

Collector–Base Breakdown Voltage

(IC = 50 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 5.0 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 50 Vdc, IE = 0)

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

70 — — Vdc

70 — — Vdc

4.0 — — Vdc

— — 10 mAdc

ON CHARACTERISTICS

DC Current Gain (4)

(IC = 5.0 Adc, VCE = 5.0 Vdc)

NOTES: (continued)

1. Pulse Width = 10 µs, Duty Cycle = 1%.

2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.

3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

4. 80 µs Pulse on Tektronix 576 or equivalent.

h

FE

10 30 — —

REV 8

 Motorola, Inc. 1997

MRF1150MA MRF1150MBMOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted)

C

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)

Common–Base Amplifier Power Gain

(VCC = 50 Vdc, P

Collector Efficiency

(VCC = 50 Vdc, P

Load Mismatch

(VCC = 50 Vdc, P
VSWR = 10:1 All Phase Angles)

= 150 W pk, f = 1090 MHz)

out

= 150 W pk, f = 1090 MHz)

out

= 150 W pk, f = 1090 MHz,

out

C

ob

G

PB

η 35 40 — %

ψ

C2 C3 C4

— 25 32 pF

7.8 9.8 — dB

No Degradation in Power Output

+

VCC = 50 Vdc

+

–

INPUT

200

RF

Z1

Z2

L1

DUT

Z3

Z4

C1, C2 — 220 pF Chip Capacitor, 100–mil ATC
C3 — 0.1 µF/100 V
C4 — 47 µF/75 V Electrolytic
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1–Z10 — Distributed Microstrip Elements — See Photomaster
Board Material — 0.031″ Thick Teflon–Fiberglass, εr = 2.5

Z5 Z6

L2

Z7

Z8

Figure 1. 1090 MHz T est Circuit

200

Z9

C2

RF

OUTPUT

Z10

Pin = 20 W pk

f = 960 MHz

150

1090 MHz

100

50

out

P , OUTPUT POWER (W ATTS pk)

0

5101520250

P

, INPUT POWER (WATTS pk)

in

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency

MRF1150MA MRF1150MB
2

1215 MHz

VCC = 50 V
tp = 10

µ

s

D = 1%

150

100

50

out

P , OUTPUT POWER (W ATTS pk)

0

17.5 W pk

15 W pk

12.5 W pk

VCC = 50 V
tp = 10

µ

s

D = 1%

960 1090 1215

f, FREQUENCY (MHz)

10 W pk

MOTOROLA RF DEVICE DATA