Motorola MRF1090MA, MRF1090MB Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

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Designed for Class B and C common base amplifier applications in short

pulse T ACAN, IFF, and DME transmitters.

• Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 90 Watts Peak
Minimum Gain = 8.4 dB

• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Industry Standard Package

• Nitride Passivated

• Gold Metallized for Long Life and Resistance to Metal Migration

• Internal Input Matching for Broadband Operation

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Base Voltage V
Emitter–Base Voltage V
Collector–Current — Peak (1) I
Total Device Dissipation @ TC = 25°C (1) (2)

Derate above 25°C

Storage Temperature Range T

CBO
EBO

C

P

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (3) R

70 Vdc

4.0 Vdc

6.0 Adc

290

1.66

–65 to +150 °C

Watts

W/°C

θJC




90 W PEAK, 960–1215 MHz

MICROWAVE POWER

TRANSISTORS

NPN SILICON

CASE 332–04, STYLE 1

(MRF1090MA)

CASE 332A–03, STYLE 1

(MRF1090MB)

0.6 °C/W

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage

(IC = 25 mAdc, VBE = 0)

Collector–Base Breakdown Voltage

(IC = 25 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 5.0 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 50 Vdc, IE = 0)

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

70 — — Vdc

70 — — Vdc

4.0 — — Vdc

— — 5.0 mAdc

ON CHARACTERISTICS

DC Current Gain (4)

(IC = 2.5 Adc, VCE = 5.0 Vdc)

NOTES: (continued)

1. Pulse Width = 10 µs, Duty Cycle = 1%.

2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.

3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

4. 80 µs Pulse on Tektronix 576 or equivalent.

REV 8

 Motorola, Inc. 1997

h

FE

10 30 — —

MRF1090MA MRF1090MBMOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted)

C

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)

Common–Base Amplifier Power Gain

(VCC = 50 Vdc, P

Collector Efficiency

(VCC = 50 Vdc, P

Load Mismatch

(VCC = 50 Vdc, P
VSWR = 10:1 All Phase Angles)

= 90 W pk, f = 1090 MHz)

out

= 90 W pk, f = 1090 MHz)

out

= 90 W pk, f = 1090 MHz,

out

L1 L2

C

ob

G

PB

η 35 40 — %

ψ

C2 C3 C4

— 12 16 pF

8.4 10.8 — dB

No Degradation in Power Output

+

50 Vdc

+

–

RF

INPUT

120

100

80

60

40

out

P , OUTPUT POWER (W ATTS pk)

20

RF

OUTPUT

Z1

Z2

DUT

Z3

Z4 Z5

C1, C2 — 220 pF Chip Capacitor, 100–mil ATC
C3 — 0.1 µF
C4 — 47 µF/75 V
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1–Z9 — Distributed Microstrip Elements,
See Photomaster
Board Material — 0.031″ Thick Glass Teflon, εr = 2.5

Z6

Z7

C1

Z8 Z9

Figure 1. 1090 MHz T est Circuit

120

f = 960 MHz

1090 MHz

36912150

P

in

1215 MHz

, INPUT POWER (WATTS pk)

VCC = 50 V
tp = 10

µ

s

D = 1%

100

80

60

40

out

P , OUTPUT POWER (W ATTS pk)

20

VCC = 50 V
tp = 10

µ

s

D = 1%

960 1090 1215

f, FREQUENCY (MHz)

Pin = 10.5 W pk

9 W pk

7.5 W pk

6 W pk

4.5 W pk

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency

MRF1090MA MRF1090MB
2

MOTOROLA RF DEVICE DATA