Motorola MRF1047T1 Schematic [ru]

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Order this document by MRF1047T1/D

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The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete
bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and
IC = 3.0 mA. The noise performance of the MRF1047T1 at low bias makes
this device the ideal choice in high gain, low noise applications. This device
is well suited for low–voltage, low–current, front–end applications, for use in
pagers, cellular and cordless phones, and other portable wireless systems.

The MRF1047T1 has 16 emitter fingers, with self–aligned and enhanced
processing, resulting in a high fτ, low operating current transistor with
reduced parasitics. The MRF1047T1 is fully–ion implanted with gold
metallization and nitride passivation for maximum device r
eliability, performance and uniformity.

• Low Noise Figure, NF

• High Current Gain–Bandwidth Product, f

• Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA

• Output Third Order Intercept, OIP

and 15 mA

• Fully Ion–Implanted with Gold Metallization and Nitride Passivation

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V

LIFETIME BUY

Emitter–Base Voltage V
Collector Current – Continuous [Note 3] I
Power Dissipation @ TC = 75°C P

Derate Linearly above TC = 75°C at 2.3 mW/°C

Storage Temperature Range T
Maximum Junction Temperature T

NOTES: 1.Meets Human Body Model (HBM) ≤300 V and Machine Model (MM) ≤75 V .

2.ESD data available upon request.

3.For MTBF >10 years.

= 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA

min

= 12 GHz, 3.0 V @ 15 mA

τ

= 26 dBm @ 1.0 GHz 3.0 V

3

CEO
CBO
EBO

C

D(max)

stg

J(max)

5.0 Vdc
12 Vdc

2.5 Vdc
45 mAdc

0.172 W

–55 to 150 °C

150 °C

RF NPN

SILICON TRANSISTOR

fτ = 12 GHz
NF
I

SEMICONDUCTOR

TECHNICAL DATA

Pin 1. Base

2. Emitter

3. Collector

PLASTIC PACKAGE

(SC–70, Tape & Reel Only)

ORDERING INFORMATION

Device Package

MRF1047T1 SC–70

= 1.0 dB

min

= 45 mA

CMAX

V

= 5.0 V

CEO

3

1

2

CASE 419

Marking

WB

*3,000 Units per 8 mm, 7 inch reel.

Tape & Reel*

THERMAL CHARACTERISTIC

Characteristics

Thermal Resistance, Junction–to–Case R

NOTE: To calculate the junction temperature use TJ = (PD x R

temperature measured on collector lead adjacent to the package body.

This document contains information on a new product. Specifications and information herein
are subject to change without notice.

MOTOROLA RF/IF DEVICE DATA

Symbol Max Unit

θJC

θJC

435 °C/W

) + TC. The case

LAST ORDER: 25SEP01 LAST SHIP: 26MAR02

 Motorola, Inc. 1998 Rev 2

1

MRF1047T1

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS [Note 1]

Collector–Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0) V(
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V
Emitter–Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V
Collector Cutoff Current (VCB =1.0 V, IE = 0)
Emitter Cutoff Current (VEB = 1.0 V, IC = 0) I

ON CHARACTERISTICS [Note 1]

DC Current Gain (VCE = 3.0 V, IC = 3.0 mA) h

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance (VCB = 1.0 Vdc, IE = 0, f = 1.0 MHz) C
Current–Gain Bandwidth Product (VCE = 3.0 Vdc, IC = 15 mA, f = 1.0 GHz) f

PERFORMANCE CHARACTERISTICS

Insertion Gain |S21|

VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz – 8.0 –
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz – 13 –

Maximum Stable Gain and/or Maximum Available Gain [Note 2] MSG, MAG dB

VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz – 11 –
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz – 16 –

Minimum Noise Figure NF

VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz – 1.2 –
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz – 1.0 –

Associated Gain at Minimum NF G

VCE = 1.0 V, IC = 1.0 mA, f = 1.0 GHz – 10 –
VCE = 3.0 V, IC = 3.0 mA, f = 1.0 GHz – 13 –

Output Power at 1.0 dB Gain Compression [Note 3] (VCE = 3.0 V,

IC = 3.0 mA, f = 1.0 GHz)

Output Third Order Intercept [Note 3] (VCE = 3.0 V, IC = 3.0 mA,

f = 1.0 GHz)

NOTES: 1.Pulse width ≤300 µs, duty cycle ≤2% pulsed.

2.Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:

LIFETIME BUY

3.Zin = 50 Ω and Z

MAG

S

21

ǒ

|

S

12

K"K2*

+

matched for optimum IP3.

out

= 25°C, unless otherwise noted)

C

Ǹ

Ǔ

1

|, if K

u

1, MSG

Symbol Min Typ Max Unit

BR)CEO
(BR)CBO
(BR)CBO

I

CBO
EBO

FE

cb

τ

2

min

NF

P

1dB

OIP

3

S

21

+

|

|,ifK

t

S

12

1

5.0 – – Vdc
12 – – Vdc

2.5 – – Vdc

–
– – 0.1 µA

100 – 200 –

– 0.4 – pF
– 12 – GHz

– 0.5 – dBm

– 22 – dBm

–

0.2

µA

dB

dB

dB

LAST ORDER: 25SEP01 LAST SHIP: 26MAR02

2

MOTOROLA RF/IF DEVICE DATA

MRF1047T1

10

0.8

0.6

0.4

C, CAPACITANCE (pF)

0.2

190
170
150
130

110

, DC CURRENT GAIN

90

FE

h

70
50

Figure 1. Capacitance

versus V oltage

C

ob

C

cb

0

VCB, REVERSE VOLTAGE

f = 1.0 MHz

108.06.04.02.00

, INPUT CAPACITANCE (pF)

IB

C

1.0

0.8

0.6

0.4

0.2

0

Figure 3. DC Current Gain

versus Collector Current

VCE = 1.0 V

10

IC, COLLECTOR CURRENT (mA)

1001.0 0.1

13

11

9.0

7.0

5.0

3.0

τ

f , GAIN BANDWIDTH PRODUCT (GHz)

1.0

Figure 2. Input Capacitance

versus V oltage

C

ib

0.25 0.75 1.25
VEB, EMITTER–BASE VOLTAGE

Figure 4. Gain–Bandwidth Product

versus Collector Current

3.0 V

f = 1.0 GHz

1.0 V

1.0

IC, COLLECTOR CURRENT (mA)

f = 1.0 MHz

1.51.00.50

10010

LIFETIME BUY

Figure 5. Functional Circuit Schematic

V

BE

RF Input

Network

MOTOROLA RF/IF DEVICE DATA

Slug TunerBias

Slug Tuner

V

CE

Bias

Network

RF Output

LAST ORDER: 25SEP01 LAST SHIP: 26MAR02

3

MRF1047T1

Figure 6. Maximum Stable/Available Gain and

Forward Insertion Gain versus Frequency

24
22
20

18
16
14
12
10

, FORWARD INSERTION GAIN (dB)

2

|

8.0

21

6.0

|S

4.0

2.0
0

MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM

0.1

AVAILABLE GAIN;

MSG

|S21|

f, FREQUENCY (GHz)

2

1.0 10 1.0 10

VCE = 1.0 V
IC = 1.0 mA

Figure 8. Maximum Stable/Available Gain and

Forward Insertion Gain versus Collector Current

20

VCE = 1.0 V

18

f = 1.0 GHz

16
14
12

, FORWARD INSERTION GAIN (dB)

2

10

|

21

8.0

MSG

|S21|

2

MAG

MAG

Figure 7. Maximum Stable/Available Gain and

Forward Insertion Gain versus Frequency

28
24
20

|S21|

16
12

, FORWARD INSERTION GAIN (dB)

2

|

21

8.0

4.0
0

MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM

0.1

AVAILABLE GAIN; |S

MSG

2

f, FREQUENCY (GHz)

VCE = 3.0 V
IC = 3.0 mA

MAG

Figure 9. Maximum Stable/Available Gain and

Forward Insertion Gain versus Collector Current

20

VCE = 3.0 V

18

f = 1.0 GHz

16
14
12

, FORWARD INSERTION GAIN (dB)

2

10

|

21

8.0

MSG

|S21|

2

MAG

6.0

4.0

MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM

AVAILABLE GAIN; |S

1.0 10 1.0 10

LIFETIME BUY

Figure 10. Minimum Noise Figure and

20
18
16
14
12
10

8.0

6.0

NF

4.0

G , ASSOCIATED GAIN (dB)

2.0
0

Associated Gain versus Frequency

VCE = 1.0 V

G

NF

NF

min

1.0 10 1.0 10

f, FREQUENCY (GHz)

IC = 1.0 mA

6.0

4.0

MSG, MAXIMUM STABLE GAIN; MAG, MAXIMUM

100 100

0.10.1

AVAILABLE GAIN; |S

IC, COLLECTOR CURRENT (mA)IC, COLLECTOR CURRENT (mA)

Figure 11. Minimum Noise Figure and

Associated Gain versus Frequency

5.0

4.0

3.0

2.0

1.0

0

26

22

18

14

, MINIMUM NOISE FIGURE (dB)

10

NF

min

G , ASSOCIATED GAIN (dB)

NF

6.0

0.10.1

G

NF

NF

min

f, FREQUENCY (GHz)

VCE = 3.0 V
IC = 3.0 mA

5.0

4.0

3.0

2.0

1.0

0

, MINIMUM NOISE FIGURE (dB)

min

NF

LAST ORDER: 25SEP01 LAST SHIP: 26MAR02

4

MOTOROLA RF/IF DEVICE DATA