Motorola MRF1035MB Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

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by MRF1035MB/D

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Designed for Class B and C common base amplifier applications in short and

long pulse TACAN, IFF, DME, and radar transmitters.

• Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 35 Watts Peak
Minimum Gain = 10 dB

• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Industry Standard Package

• Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Internal Input Matching for Broadband Operation

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector-Current — Continuous I
Total Device Dissipation @ TC = 25°C (1)

Derate above 25°C

Storage Temperature Range T

CES
CBO
EBO

C

P

D

stg

60 Vdc
60 Vdc

4.0 Vdc

2.0 Adc
35

200

–65 to +150 °C

Watts

mW/°C



35 W (PEAK), 960–1215 MHz

MICROWAVE POWER

TRANSISTORS

NPN SILICON

CASE 332A–03, STYLE 1

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (2) R

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted.)

C

θJC

5.0 °C/W

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

(IC = 20 mAdc, VBE = 0)

Collector-Base Breakdown Voltage

(IC = 20 mAdc, IE = 0)

Emitter-Base Breakdown Voltage

(IE = 2.0 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 50 Vdc, IE = 0)

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

60 — — Vdc

60 — — Vdc

4.0 — — Vdc

— — 2.0 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 500 mAdc, VCE = 5.0 Vdc)

1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.

2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

h

FE

10 40 100 —

 Motorola, Inc. 1997

(Replaces MRF1035MA/D)

MRF1035MBMOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic UnitMaxTypMinSymbol

= 25°C unless otherwise noted.)

C

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1%)

Common-Base Amplifier Power Gain

(VCC = 50 Vdc, P

Collector Efficiency

(VCC = 50 Vdc, P

Load Mismatch

(VCC = 50 Vdc, P
VSWR = 10:1 All Phase Angles)

= 35 W Peak, f = 1090 MHz)

out

= 35 W Peak, f = 1090 MHz)

out

= 35 W Peak, f = 1090 MHz,

out

C

ob

G

PB

η 30 34 — %

ψ

— 10 15 pF

10 12.4 — dB

No Degradation in Power Output

C2

C3 C4

+

+

–

50 Vdc

RF

INPUT

Z1

Z2

Z3

L1

DUT

Z4

C1, C2 — 220 pF 100 mil Chip Capacitor
C3 — 0.1 µF
C4 — 10 µF/75 V Electrolytic
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1–Z10 — Microstrip, See Photomaster
Board Material — 0.031″ Glass Teflon

Board Material — εr = 2.5

L2

Z5 Z7 Z9

Z6 Z8 Z10

Figure 1. 1090 MHz T est Circuit

C1

RF

OUTPUT

MRF1035MB
2

MOTOROLA RF DEVICE DATA