Motorola MRF1035MB Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
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by MRF1035MB/D
Designed for Class B and C common base amplifier applications in short and
long pulse TACAN, IFF, DME, and radar transmitters.
• Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 35 Watts Peak
Minimum Gain = 10 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage V
Collector-Base Voltage V
Emitter-Base Voltage V
Collector-Current — Continuous I
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range T
CES
CBO
EBO
C
P
D
stg
60 Vdc
60 Vdc
4.0 Vdc
2.0 Adc
35
200
–65 to +150 °C
Watts
mW/°C
35 W (PEAK), 960–1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332A–03, STYLE 1
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) R
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted.)
C
θJC
5.0 °C/W
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
Collector-Base Breakdown Voltage
(IC = 20 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 2.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
60 — — Vdc
60 — — Vdc
4.0 — — Vdc
— — 2.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mAdc, VCE = 5.0 Vdc)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
h
FE
10 40 100 —
Motorola, Inc. 1997
(Replaces MRF1035MA/D)
MRF1035MBMOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS — continued (T
Characteristic UnitMaxTypMinSymbol
= 25°C unless otherwise noted.)
C
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1%)
Common-Base Amplifier Power Gain
(VCC = 50 Vdc, P
Collector Efficiency
(VCC = 50 Vdc, P
Load Mismatch
(VCC = 50 Vdc, P
VSWR = 10:1 All Phase Angles)
= 35 W Peak, f = 1090 MHz)
out
= 35 W Peak, f = 1090 MHz)
out
= 35 W Peak, f = 1090 MHz,
out
C
ob
G
PB
η 30 34 — %
ψ
— 10 15 pF
10 12.4 — dB
No Degradation in Power Output
C2
C3 C4
+
+
–
50 Vdc
RF
INPUT
Z1
Z2
Z3
L1
DUT
Z4
C1, C2 — 220 pF 100 mil Chip Capacitor
C3 — 0.1 µF
C4 — 10 µF/75 V Electrolytic
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1–Z10 — Microstrip, See Photomaster
Board Material — 0.031″ Glass Teflon
Board Material — εr = 2.5
L2
Z5 Z7 Z9
Z6 Z8 Z10
Figure 1. 1090 MHz T est Circuit
C1
RF
OUTPUT
MRF1035MB
2
MOTOROLA RF DEVICE DATA
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