Motorola MRF1031 Datasheet

1
MRF1031MOTOROLA RF DEVICE DATA
The RF Line
  
. . . designed primarily for wideband, large–signal output and driver amplifier stages to 1.0 GHz.
Designed for Class A Linear Power Amplifiers
Specified 25 Volt, 900 MHz Characteristics:
Gold Metallization for Improved Reliability
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
30 Vdc
Collector–Base Voltage V
CBO
60 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
50
0.286
Watts
W/°C
Operating Junction Temperature T
J
200 °C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (TC = 70°C) R
θJC
3.5 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mA, IB = 0)
V
(BR)CEO
30 Vdc
Collector–Emitter Breakdown Voltage
(IC = 20 mA, VBE = 0)
V
(BR)CES
60 Vdc
Collector–Base Breakdown Voltage
(IC = 20 mA, IE = 0)
V
(BR)CBO
60 Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mA, IC = 0)
V
(BR)EBO
4.0 Vdc
Collector Cutoff Current
(VCB = 25 V, IE = 0)
I
CBO
2.5 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mA, VCE = 5.0 V) h
FE
20 80
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz) C
ob
14 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 25 V, P
out
= 4.5 W, f = 900 MHz, IC = 0.6 A)
G
PE
7.0 8.0 dB
Load Mismatch
(VCE = 25 V, IC = 0.6 A, P
out
= 4.5 W, f = 900 MHz,
Load VSWR = :1, All Phase Angles)
ψ
No Degradation in Output Power
Order this document
by MRF1031/D

SEMICONDUCTOR TECHNICAL DATA
4.5 W, TO 1.0 GHz LINEAR
UHF POWER TRANSISTOR
NPN SILICON
CASE 244–04, STYLE 1
(.280 SOE)
Motorola, Inc. 1994
REV 6
MRF1031 2
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 244–04
ISSUE J
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
K
D
A
J
T
F
P
M
2
13
4
SEATING PLANE
8–32 NC 2A
WRENCH FLAT
U
E B
S
C
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A 7.06 7.26 0.278 0.286 B 6.20 6.50 0.244 0.256 C 14.99 16.51 0.590 0.650 D 5.46 5.96 0.215 0.235 E 1.40 1.65 0.055 0.065 G 1.52 ––– 0.060 ––– J 0.08 0.17 0.003 0.007 K 11.05 ––– 0.435 ––– M 45 NOM 45 NOM P ––– 1.27 ––– 0.050 S 3.00 3.25 0.118 0.128 T 1.40 1.77 0.055 0.070 U 2.92 3.68 0.115 0.145
_ _
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USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 T anners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF1031/D
*MRF1031/D*
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