Motorola MRF1015MA, MRF1015MB Datasheet
1
MRF1015MA MRF1015MBMOTOROLA RF DEVICE DATA
The RF Line
. . . designed for Class B and C common base amplifier applications in short
and long pulse TACAN, IFF, DME, and radar transmitters.
• Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 15 Watts Peak
Minimum Gain = 10 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CES
60 Vdc
Collector–Base Voltage V
CBO
60 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
1.0 Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
P
D
17.5
100
Watts
mW/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) R
θJC
10 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V
(BR)CES
60 — — Vdc
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V
(BR)CBO
60 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
I
CBO
— — 1.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
h
FE
10 40 100 —
NOTES: (continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF1015MA/D
SEMICONDUCTOR TECHNICAL DATA
15 W (PEAK), 960–1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332–04, STYLE 1
MRF1015MA
CASE 332A–03, STYLE 1
MRF1015MB
Motorola, Inc. 1994
REV 6
MRF1015MA MRF1015MB
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 5.0 7.5 pF
FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, P
out
= 15 W Peak, f = 1090 MHz)
G
PB
10 12.5 — dB
Collector Efficiency
(VCC = 50 Vdc, P
out
= 15 W Peak, f = 1090 MHz)
η 30 35 — %
Load Mismatch
(VCC = 50 Vdc, P
out
= 15 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1, C2 — 220 pF 100 mil Chip Capacitor
C3 — 0.1 µF
C4 — 47 µF/75 V Electrolytic Capacitor
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1–Z8 — Microstrip, See Photomaster
Board Material — 0.032″ Glass Teflon
Board Material — εr = 2.5
RF
INPUT
RF
OUTPUT
+
50 Vdc
DUT
Z1
–
L2
Z2
C2
+
C3 C4
L1
Z3 Z4 Z5 Z6 Z7
C1
Z8
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