Motorola MRF10120 Datasheet
1
MRF10120MOTOROLA RF DEVICE DATA
The RF Line
Designed for 960–1215 MHz long pulse common base amplifier applications
such as JTIDS and Mode S transmitters.
• Guaranteed Performance @ 1.215 GHz, 36 Vdc
Output Power = 120 Watts Peak
Gain = 8.0 dB Min., 9.2 dB (Typ)
• 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR
• Hermetically Sealed Industry Standard Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input and Output Matching for Broadband Operation
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CES
55 Vdc
Collector–Base Voltage V
CBO
55 Vdc
Emitter–Base Voltage V
EBO
3.5 Vdc
Collector Current — Peak (1) I
C
15 Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
P
D
380
2.17
Watts
W/°C
Storage Temperature Range T
stg
–65 to +200 °C
Junction Temperature T
J
200
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (3) R
θJC
0.46 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V
(BR)CES
55 — — Vdc
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V
(BR)CBO
55 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V
(BR)EBO
3.5 — — Vdc
Collector Cutoff Current (VCB = 36 Vdc, IE = 0) I
CBO
— — 25 mAdc
NOTES: (continued)
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF10120/D
SEMICONDUCTOR TECHNICAL DATA
120 W (PEAK), 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355C–02, STYLE 1
Motorola, Inc. 1995
REV 7
MRF10120
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) h
FE
20 — — —
FUNCTIONAL TESTS (7.0 µs Pulses @ 54% duty cycle for 3.4 ms; then off for 4.5 ms; overall duty cycle = 23%)
Common–Base Amplifier Power Gain
(VCC = 36 Vdc, P
out
= 120 W Peak, f = 1215 MHz)
G
PB
8.0 9.2 — dB
Collector Efficiency
(VCC = 36 Vdc, P
out
= 120 W Peak, f = 1215 MHz)
η 50 55 — %
Load Mismatch
(VCC = 36 Vdc, P
out
= 120 W Peak, f = 1215 MHz,
VSWR = 3:1 All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. Test Circuit
Z1–Z9 — Microstrip, See Details
Board Material — Teflon/Glass Laminate,
Dielectric Thickness = 0.030″,
εr = 2.55, 2 Oz. Copper
C1 — 270 pF 100 Mil Chip Capacitor
C2 — 220 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 47 µF 50 V Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
RF
INPUT
RF
OUTPUT
C1
36 Vdc
+
–
D.U.T.
Z1
+
L1
Z2 Z3 Z4 Z6 Z7 Z8 Z9
Z5
C2 C3 C4
ALL DIMENSIONS IN INCHES
1.00
0.4
0.2
0.15
1.1
0.15
0.30.6
0.081
0.91 0.6
0.66
0.55
0.22
1.06 0.52 0.8
0.081
0.05
0.44 0.74
0.3
0.13
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