Motorola MRF10070 Datasheet
1
MRF10070MOTOROLA RF DEVICE DATA
The RF Line
Designed for 1025 –1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
• Guaranteed Performance @ 1090 MHz
Output Power = 70 Watts Peak
Gain = 9.0 dB Min
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Characterized with 10 µs, 10% Duty Cycle Pulses
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input and Output Matching
• Hermetically Sealed Package
• Recommended Driver for MRF10500 Transistor or a Pair of MRF10350
Transistors
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CES
65 Vdc
Collector–Base Voltage V
CBO
65 Vdc
Emitter–Base Voltage V
EBO
3.5 Vdc
Collector Current — Peak (1) I
C
8.8 Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
P
D
438
2.5
Watts
W/°C
Storage Temperature Range T
stg
– 65 to + 200 °C
Junction Temperature T
J
200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (3) R
θJC
0.4 °C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value
measured @ 10 µs, 10%.)
Order this document
by MRF10070/D
SEMICONDUCTOR TECHNICAL DATA
70 W (PEAK)
1025 –1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 376C–01, STYLE 1
Motorola, Inc. 1994
REV 6
MRF10070
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V
(BR)CES
65 — — Vdc
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V
(BR)CBO
65 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V
(BR)EBO
3.5 — — Vdc
Collector Cutoff Current (VCB = 50 Vdc, IE = 0) I
CBO
— — 25 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) h
FE
20 — — —
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, P
out
= 70 W Peak, f = 1090 MHz)
G
PB
9.0 10 — dB
Collector Efficiency
(VCC = 50 Vdc, P
out
= 70 W Peak, f = 1090 MHz)
η 40 — — %
Load Mismatch
(VCC = 50 Vdc, P
out
= 70 W Peak, f = 1090 MHz,
Load VSWR = 10:1 All Phase Angles)
ψ No Degradation in Output Power
Before or After Test
Figure 1. Test Circuit
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12 Z13
D.U.T.
+
–
C4
C2 C3
C1
L1
C1 — 82 pF 100 mil Chip Capacitor
C2 — 82 pF 100 mil Chip Capacitor
C3 — 0.1 µF
C4 — 100 µF/100 Vdc Electrolytic
L1 — 3 turns #18 AWG, 1/8″ ID, 0.18″ Long
Z1 – Z13 — Microstrip, see details below
Board Material — 0.030″ Glass Teflon; 2 oz.
Cu clad; both sides; ∈r = 2.55
1100
79
459
79
100
264
168
681
583
578
220
100
352
79
1113
865
791
203
374 536
266
265
50
300
300
203
595
159
79
226
283 283
100
300
1.000
79
50
+
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