Motorola MRF10031 Datasheet
1
MRF10031MOTOROLA RF DEVICE DATA
The RF Line
Designed for 960 –1215 MHz long or short pulse common base amplifier
applications such as JTIDS and Mode–S transmitters.
• Guaranteed Performance @ 960 MHz, 36 Vdc
Output Power = 30 Watts Peak
Minimum Gain = 9.0 dB Min (9.5 dB Typ)
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Industry Standard Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CES
55 Vdc
Collector–Base Voltage(1) V
CBO
55 Vdc
Emitter–Base Voltage V
EBO
3.5 Vdc
Collector Current — Continuous (1) I
C
3.0 Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
P
D
110
0.625
Watts
mW/°C
Storage Temperature Range T
stg
– 65 to +200 °C
Junction Temperature T
J
200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (3) R
θJC
1.6 °C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value
measured @ 23% duty cycle)
Order this document
by MRF10031/D
SEMICONDUCTOR TECHNICAL DATA
30 W (PEAK)
960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 376B–02, STYLE 1
Motorola, Inc. 1994
REV 6
MRF10031
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V
(BR)CES
55 — — Vdc
Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V
(BR)CBO
55 — — Vdc
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V
(BR)EBO
3.5 — — Vdc
Collector Cutoff Current (VCB = 36 Vdc, IE = 0) I
CBO
— — 2.0 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc) h
FE
20 — — —
FUNCTIONAL TESTS (10 µs Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle – 25%)
Common–Base Amplifier Power Gain
(VCC = 36 Vdc, P
out
= 30 W Peak, f = 960 MHz)
G
PB
9.0 9.5 — dB
Collector Efficiency
(VCC = 36 Vdc, P
out
= 30 W Peak, f = 960 MHz)
η 40 45 — %
Load Mismatch
(VCC = 36 Vdc, P
out
= 30 W Peak, f = 960 MHz,
VSWR = 10:1 All Phase Angles)
ψ No Degradation in Output Power
Figure 1. Test Circuit
Z5
RF INPUT
D.U.T.
RF OUTPUT
C1
L1
C2 C3 C4
+
+
–
Z1
Z2
Z3
Z4
Z6
Z7 Z8
Z9
36 Vdc
.083
.223
.733
.118
.628
1.350
.669.780
1.210
.128
.083
.400
1.020
.218
2.050
.389
.354
.083.100
.113
.215
BROADBAND FIXTURE
C1 — 75 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 1000 µF, 50 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
εr = 2.55, 2 Oz. Copper
2.138
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