Motorola MRF1002MA, MRF1002MB Datasheet
1
MRF1002MA MRF1002MBMOTOROLA RF DEVICE DATA
The RF Line
. . . designed for Class B and C common base amplifier applications in short
and long pulse TACAN, IFF, DME, and radar transmitters.
• Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 2.0 Watts Peak
Minimum Gain = 10 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
20 Vdc
Collector–Base Voltage V
CBO
50 Vdc
Emitter–Base Voltage V
EBO
3.5 Vdc
Collector Current — Continuous I
C
250 mAdc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
P
D
7.0
40
Watts
mW/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) R
θJC
25 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V
(BR)CEO
20 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V
(BR)CES
50 — — Vdc
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0)
V
(BR)CBO
50 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
V
(BR)EBO
3.5 — — Vdc
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
I
CBO
— — 0.5 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
h
FE
10 — 100 —
NOTES: (continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF1002MA/D
SEMICONDUCTOR TECHNICAL DATA
2.0 W (PEAK), 960–1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332–04, STYLE 1
MRF1002MA
CASE 332A–03, STYLE 1
MRF1002MB
Motorola, Inc. 1994
REV 6
MRF1002MA MRF1002MB
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 35 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 2.5 5.0 pF
FUNCTIONAL TESTS (Pulse Width = 10 µs, Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 35 Vdc, P
out
= 2.0 W pk, f = 1090 MHz)
G
PB
10 12 — dB
Collector Efficiency
(VCC = 35 Vdc, P
out
= 2.0 W pk, f = 1090 MHz)
η 40 45 — dB
Load Mismatch
(VCC = 35 Vdc, P
out
= 2.0 W, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψ
No Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1, C3 — 220 pF Chip Capacitor, 100 mil ATC
C2 — 20 µF/50 Vdc Electrolytic
C4 — 0.1 µF Erie Redcap
L1, L2 — 2 Turns #18 AWG, 1/8″ ID
Z1–Z14 — Distributed Microstrip Elements, See Photomaster
Board Material — 0.031″ Thick Teflon–Fiberglass,
Board Material — εr = 2.56
RF
INPUT
RF
OUTPUT
C1
Z13
C2 C3 C4
+
35 Vdc
–
+
L1
DUT
Z1
Z2 Z5
Z4 Z7
Z3 Z6
Z8 Z11 Z14
Z9 Z12
Z10
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