Motorola MRF10005 Datasheet

1

MRF10005MOTOROLA RF DEVICE DATA

The RF Line

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. . . designed for CW and long pulsed common base amplifier applications,
such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high
overall duty cycles.

• Guaranteed Performance @ 1.215 GHz, 28 Vdc
Output Power = 5.0 Watts CW
Minimum Gain = 8.5 dB, 10.3 dB (Typ)

• RF Performance Curves given for 28 Vdc and 36 Vdc Operation

• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Hermetically Sealed Industry Standard Package

• Silicon Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Internal Input Matching for Broadband Operation

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CES

55 Vdc

Collector–Base Voltage V

CBO

55 Vdc

Emitter–Base Voltage V

EBO

3.5 Vdc

Collector Current — Continuous (1) I

C

1.25 mAdc

Total Device Dissipation @ TA = 25°C (1)

Derate above 25°C

P

D

25

143

Watt

mW/°C

Storage Temperature Range T

stg

–65 to +200 °C

Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (2) R

θJC

7.0 °C/W

NOTES:

1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.

2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

Order this document

by MRF10005/D

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SEMICONDUCTOR TECHNICAL DATA

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5.0 W, 960–1215 MHz
MICROWAVE POWER

TRANSISTOR
NPN SILICON

CASE 336E–02, STYLE 1

 Motorola, Inc. 1994

REV 6

MRF10005
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V

(BR)CES

55 — — Vdc

Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V

(BR)CBO

55 — — Vdc

Emitter–Base Breakdown Voltage (IE = 0.5 mAdc, IC = 0) V

(BR)EBO

3.5 — — Vdc

Collector Cutoff Current (VCB = 28 Vdc, IE = 0) I

CBO

— — 1.0 mAdc

ON CHARACTERISTICS

DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc) h

FE

20 — 100 —

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) C

ob

— 7.0 10 pF

FUNCTIONAL TESTS

Common–Base Amplifier Power Gain

(VCC = 28 Vdc, P

out

= 5.0 W, f = 1215 MHz)

G

PB

8.5 10.3 — dB

Collector Efficiency

(VCC = 28 Vdc, P

out

= 5.0 W, f = 1215 MHz)

η 45 55 — %

Load Mismatch

(VCC = 28 Vdc, P

out

= 5.0 W, f = 1215 MHz,

VSWR = 10:1 All Phase Angles)

ψ

No Degradation in Output Power

Figure 1. Test Circuit

C1, C2, C3 — 220 pF 100 mil Chip Capacitor
C4 — 0.1 µF
C5 — 47 µF/50 V Electrolytic
L1 — 3 turn #18 AWG, 1/8″ ID, 0.18″ Long

Z1–Z10 — Microstrip, see details below
Board Material — 0.030″ Glass Teflon,

2.0 oz. Copper, εr = 2.55

RF

INPUT

RF

OUTPUT

Z10

C1

28 Vdc

+
–

D.U.T.

Z1 Z3

Z2 Z4 Z5 Z6

Z7

Z8

C3 C4 C5

+

L1

C2

Z9

0.050

0.25

0.20

0.050

0.40

0.90

0.37

0.70

0.13

0.080

0.50

0.20

0.660

0.275

0.16 0.25

0.375

0.57

0.40

0.25

0.08

2.365

1.385

1.125

0.650

0.30

0.000

0.00

0.20

0.30

0.40

0.70

1.45

1.91

1.96

2.365