Motorola MRA1000-7L Datasheet
1
MRA1000–7LMOTOROLA RF DEVICE DATA
The RF Line
. . . designed primarily for wideband, large–signal output and driver amplifier
stages to 1000 MHz.
• Designed for Class A Linear Power Amplifiers
• Specified 19 Volt, 1000 MHz Characteristics:
Output Power — 7.0 Watts
Power Gain — 9.0 dB Min, Small–Signal
• Built–In Matching Network for Broadband Operation
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
28 Vdc
Collector–Base Voltage V
CBO
50 Vdc
Emitter–Base Voltage V
EBO
3.5 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
42
0.25
Watts
W/°C
Operating Junction Temperature T
J
200 °C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (TC = 70°C) R
θJC
4.0 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) V
(BR)CEO
28 — — Vdc
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) V
(BR)CES
50 — — Vdc
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0) V
(BR)CBO
50 — — Vdc
Emitter–Base Breakdown Voltage (IE = 5.0 mA, IC = 0) V
(BR)EBO
3.5 — — Vdc
Collector Cutoff Current (VCB = 19 V, IE = 0) I
CBO
— — 15 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 A, VCE = 5.0 V) h
FE
20 — 90 —
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 24 V, IE = 0, f = 1.0 MHz) C
ob
— — 22 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Small–Signal Gain
(VCE = 19 V, f = 1.0 GHz, IC = 1.2 A)
G
SS
9.0 10 — dB
Load Mismatch
(VCE = 19 V, IC = 1.2 A, P
out
= 7.0 W, f = 1.0 GHz,
Load VSWR =
∞:1, All Phase Angles)
ψ
No Degradation in Output Power
Overdrive (VCE = 19 V, IC = 1.2 A, f = 1.0 GHz)
(No degradation)
P
in
over
— — 3.5 W
Output Power, 1.0 dB Compression Point
(VCE = 19 V, f = 1.0 GHz, IC = 1.2 A)
P
o1 dB
7.0 — — W
Order this document
by MRA1000–7L/D
SEMICONDUCTOR TECHNICAL DATA
9.0 dB, TO 1000 MHz
7.0 WATTS BROADBAND
UHF POWER TRANSISTOR
CASE 145D–02, STYLE 1
(.380 SOE)
Motorola, Inc. 1994
REV 6
MRA1000–7L
2
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 145D–02
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
R
C
A
W
V
8–32UNC–2A
J
H
D
K
B
3
4
2
1
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.320 0.385 9.28 9.77
B 0.320 0.330 8.13 8.38
C 0.700 0.778 17.78 19.76
D 0.220 0.230 5.59 5.84
H 0.160 0.170 4.07 4.31
J 0.003 0.006 0.08 0.15
K 0.490 0.520 12.45 13.20
R 0.248 0.275 6.30 7.23
V 0.100 0.130 2.54 3.30
W 0.055 0.065 1.40 1.65
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MRA1000–7L/D
*MRA1000-7L/D*
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