Motorola MRA1000-3.5L Datasheet
1
MRA1000–3.5LMOTOROLA RF DEVICE DATA
The RF Line
Designed primarily for wideband, large–signal output and driver amplifier
stages to 1000 MHz.
• Designed for Class A Linear Power Amplifiers
• Specified 19 Volt, 1000 MHz Characteristics:
Output Power — 3.5 Watts
Power Gain — 10 dB, Small–Signal
• Built–In Matching Network for Broadband Operation
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V
CEO
28 Vdc
Collector–Base Voltage V
CBO
50 Vdc
Emitter–Base Voltage V
EBO
3.5 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
22
0.125
Watts
W/°C
Operating Junction Temperature T
J
200 °C
Storage Temperature Range T
stg
–65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (TC = 70°C) R
θJC
8 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage (IC = 10 mA, IB = 0) V
(BR)CEO
28 – – Vdc
Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) V
(BR)CES
50 – – Vdc
Collector–Base Breakdown Voltage (IC = 10 mA, IE = 0) V
(BR)CBO
50 – – Vdc
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0) V
(BR)EBO
3.5 – – Vdc
Collector Cutoff Current (VCB = 30 V, IE = 0) I
CBO
– – 10 mAdc
. (continued)
Order this document
by MRA1000–3.5L/D
SEMICONDUCTOR TECHNICAL DATA
10 dB, 1000 MHz
3.5 W
BROADBAND
UHF POWER TRANSISTOR
CASE 145D–02, STYLE 1
(.380 SOE)
Motorola, Inc. 1997
REV 1
MRA1000–3.5L
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 250 mA, VCE = 5 V) h
FE
20 – 90 –
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 24 V, IE = 0, f = 1 MHz) C
ob
– – 15 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Small–Signal Gain
(VCE = 19 V, Pin = 1 mW, f = 1 GHz, IC = 600 mA)
G
SS
10 – – dB
Load Mismatch
(VCE = 19 V, IC = 600 mA, P
out
= 3.5 W, f = 1 GHz,
Load VSWR = ∞:1, All Phase Angles)
ψ
No Degradation in Output Power
Overdrive (VCE = 19 V, IC = 600 mA, f = 1 GHz)
(No degradation)
P
inover
– – 1.75 W
TYPICAL CHARACTERISTICS
Table 1. Common Emitter S–Parameters
V
CE
I
C
f
S
11
S
21
S
12
S
22
V
CE
(Volts)
I
C
(mA)
f
(GHz)
Mag
éĂφ
Mag
éĂφ
Mag
éĂφ
Mag
éĂφ
19 600 0.5 0.91 174 1.78 53 0.03 23 0.55 –164
0.6 0.9 173 1.64 47 0.03 21 0.58 –170
0.7 0.87 171 1.53 36 0.03 19 0.63 –159
0.8 0.85 168 1.51 24 0.03 15 0.68 –157
0.9 0.82 168 1.49 10 0.03 5 0.74 –158
1 0.78 168 1.5 –7 0.03 –4 0.83 –160
Table 2. Zin and ZOL* versus Frequency
VCC = 19 V, Pc = 3.5 W
Freq.
ZOL* Zin (Ohms)
Freq.
(MHz)
Re Im Re Im
500 14.6 –6.31 2.36 2.53
600 13.2 –4.07 2.74 3.18
700 11.7 –8.95 3.36 4.14
800 9.95 –9.65 4.12 5.13
900 7.72 –9.72 4.99 5.33
1000 4.67 –8.74 6.36 5.04
ZOL* = Conjugate of the optimum lead impedance into which the device output operates at a given frequency, output power and voltage.
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