Motorola MRA1000-3.5L Datasheet

1

MRA1000–3.5LMOTOROLA RF DEVICE DATA

The RF Line

  

Designed primarily for wideband, large–signal output and driver amplifier
stages to 1000 MHz.

• Designed for Class A Linear Power Amplifiers

• Specified 19 Volt, 1000 MHz Characteristics:

Output Power — 3.5 Watts
Power Gain — 10 dB, Small–Signal

• Built–In Matching Network for Broadband Operation

• Gold Metallization for Improved Reliability

• Diffused Ballast Resistors

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter V oltage V

CEO

28 Vdc

Collector–Base Voltage V

CBO

50 Vdc

Emitter–Base Voltage V

EBO

3.5 Vdc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

22

0.125

Watts
W/°C

Operating Junction Temperature T

J

200 °C

Storage Temperature Range T

stg

–65 to +200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (TC = 70°C) R

θJC

8 °C/W

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage (IC = 10 mA, IB = 0) V

(BR)CEO

28 – – Vdc

Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) V

(BR)CES

50 – – Vdc

Collector–Base Breakdown Voltage (IC = 10 mA, IE = 0) V

(BR)CBO

50 – – Vdc

Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0) V

(BR)EBO

3.5 – – Vdc

Collector Cutoff Current (VCB = 30 V, IE = 0) I

CBO

– – 10 mAdc

. (continued)

Order this document

by MRA1000–3.5L/D



SEMICONDUCTOR TECHNICAL DATA



10 dB, 1000 MHz

3.5 W

BROADBAND

UHF POWER TRANSISTOR

CASE 145D–02, STYLE 1

(.380 SOE)

 Motorola, Inc. 1997

REV 1

MRA1000–3.5L
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain (IC = 250 mA, VCE = 5 V) h

FE

20 – 90 –

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 24 V, IE = 0, f = 1 MHz) C

ob

– – 15 pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Small–Signal Gain

(VCE = 19 V, Pin = 1 mW, f = 1 GHz, IC = 600 mA)

G

SS

10 – – dB

Load Mismatch

(VCE = 19 V, IC = 600 mA, P

out

= 3.5 W, f = 1 GHz,

Load VSWR = ∞:1, All Phase Angles)

ψ

No Degradation in Output Power

Overdrive (VCE = 19 V, IC = 600 mA, f = 1 GHz)

(No degradation)

P

inover

– – 1.75 W

TYPICAL CHARACTERISTICS

Table 1. Common Emitter S–Parameters

V

CE

I

C

f

S

11

S

21

S

12

S

22

V

CE

(Volts)

I

C

(mA)

f

(GHz)

Mag

éĂφ

Mag

éĂφ

Mag

éĂφ

Mag

éĂφ

19 600 0.5 0.91 174 1.78 53 0.03 23 0.55 –164

0.6 0.9 173 1.64 47 0.03 21 0.58 –170

0.7 0.87 171 1.53 36 0.03 19 0.63 –159

0.8 0.85 168 1.51 24 0.03 15 0.68 –157

0.9 0.82 168 1.49 10 0.03 5 0.74 –158
1 0.78 168 1.5 –7 0.03 –4 0.83 –160

Table 2. Zin and ZOL* versus Frequency

VCC = 19 V, Pc = 3.5 W

Freq.

ZOL* Zin (Ohms)

Freq.

(MHz)

Re Im Re Im

500 14.6 –6.31 2.36 2.53
600 13.2 –4.07 2.74 3.18
700 11.7 –8.95 3.36 4.14
800 9.95 –9.65 4.12 5.13
900 7.72 –9.72 4.99 5.33

1000 4.67 –8.74 6.36 5.04

ZOL* = Conjugate of the optimum lead impedance into which the device output operates at a given frequency, output power and voltage.