Motorola MRA0510-50H Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Order this document
by MRA0510–50H/D
Designed primarily for wideband, large–signal output and driver amplifier
stages in the 500 to 1000 MHz frequency range.
• Designed for Class AB Linear Power Amplifiers
• Specified 28 Volt, 1000 MHz Characteristics:
Output Power — 50 Watts
Power Gain — 7 dB (Min), Class AB
• Built–In Matching Network for Broadband Operation
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
• Hermetic Package for Military/Space Applications
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating Junction Temperature T
Storage Temperature Range T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, RF, Junction to Case (TC = 70°C) R
CEO
CBO
EBO
P
D
J
stg
θJC
7.0 dB, 500 – 1000 MHz
UHF POWER TRANSISTOR
CASE 391–03, STYLE 1
50 W
BROADBAND
(HLP–42)
30 Vdc
60 Vdc
4 Vdc
125
0.715
200 °C
–65 to +200 °C
1.4 °C/W
Watts
W/°C
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown V oltage (IC = 25 mA, VBE = 0) V
Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0) V
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0) V
Collector–Emitter Breakdown Voltage (IC = 25 mA, RBE = 1 Ω) V
Collector Cutoff Current (VCB = 30 V, IE = 0) I
(1) Each transistor chip measured separately. (continued)
REV 1
(BR)CES
(BR)CBO
(BR)EBO
(BR)CER
CBO
Motorola, Inc. 1997
60 – – Vdc
60 – – Vdc
4 – – Vdc
50 – – Vdc
– – 25 mAdc
MRA0510–50HMOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS — continued
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (1)
DC Current Gain (IC = 1 A, VCE = 5 V) h
DYNAMIC CHARACTERISTICS (1)
Output Capacitance (VCB = 28 V, IE = 0, f = 1 MHz) C
FUNCTIONAL TESTS (2)
Common–Emitter Amplifier Power Gain
(VCE = 28 V, P
Load Mismatch
(VCE = 28 V, ICQ = 2 x 120 mA, P
Load VSWR = 5:1, All Phase Angles)
Broadband Power Gain
(VCE = 28 V, P
ICQ = 2 x 120 mA)
(1) Each transistor chip measured separately.
(2) Both transistor chips operating in push–pull amplifier.
= 50 W, f = 1 GHz, ICQ = 2 x 120 mA)
out
= 50 W, f = 1 GHz,
out
= 45 W, f = 500 mHz and 1 GHz,
out
TYPICAL CHARACTERISTICS
G
G
FE
ob
PE1
ψ
PE2
20 – 80 –
– – 24 pF
7 – – dB
No Degradation in Output Power
6.5 – – dB
12
VCC = 28 V
10
Po = 50 W
ONE SIDE ONLY
8.0
6.0
4.0
, SERIES INPUT IMPEDANCE (OHMS)
2.0
in
Z
0
f, FREQUENCY (MHz)
Figure 1. Input Impedance versus Frequency
JX
R
6.0
5.0
VCC = 28 V
4.0
Po = 50 W
ONE SIDE ONLY
3.0
2.0
1.0
*, SERIES OUTPUT IMPEDANCE (OHMS)
0
OL
Z
1000900800700600500
–1.0
f, FREQUENCY (MHz)
R
JX
1000900800700600500
Figure 2. Output Impedance versus Frequency
MRA0510–50H
2
MOTOROLA RF DEVICE DATA
Loading...