MOTOROLA MPN3404 Datasheet
ON Semiconductor
Silicon Pin Diode
This device is designed primarily for VHF band switching
applications but is also suitable for use in general–purpose switching
circuits. It is supplied in a cost–effective TO–92 type plastic package
for economical, high–volume consumer and industrial requirements.
• Rugged PIN Structure Coupled with Wirebond
Construction for Optimum Reliability
• Low Series Resistance @ 100 MHz
RS = 0.7 Ohms (Typ) @ IF = 10 mAdc
• Sturdy TO–92 Style Package for Handling Ease
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
Forward Power Dissipation @ TA = 25°C
Derate above 25°C
Junction Temperature T
Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 µAdc)
Diode Capacitance
(VR = 15 Vdc, f = 1.0 MHz)
Series Resistance (Figure 5)
(IF = 10 mAdc)
Reverse Leakage Current
(VR = 15 Vdc)
A
P
= 25°C unless otherwise noted)
R
D
J
stg
1
Anode
20 Vdc
400
4.0
+125 °C
–55 to +150 °C
V
(BR)R
C
T
R
S
I
R
MPN3404
SILICON PIN
SWITCHING DIODE
2
Cathode
1
2
CASE 182–06, STYLE 1
TO–92 (TO–226AC)
mW
mW/°C
20 — — Vdc
— 1.3 2.0 pF
— 0.7 0.85 Ω
— — 0.1 µAdc
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 2
1 Publication Order Number:
MPN3404/D
1.8
MPN3404
TYPICAL CHARACTERISTICS
50
1.6
1.4
1.2
1.0
0.8
, SERIES RESISTANCE (OHMS)
S
R
0.6
0.4
2.0 6.0 8.0 10
0 4.0 12 14
IF, FORWARD CURRENT (mA)
Figure 1. Series Resistance Figure 2. Forward Voltage
10
7.0
5.0
4.0
3.0
, DIODE CAPACITANCE (pF)
2.0
T
C
1.0
0
-3.0 -18-6.0 -21-9.0 -12
VR, REVERSE VOLTAGE (VOLTS)
T
A
= 25°C
-15+3.0
, FORWARD CURRENT (mA)
F
I
µ
, REVERSE CURRENT ( A)
R
I
0.004
0.001
40
30
20
10
100
4.0
1.0
0.4
0.1
0.04
0.01
T
= 25°C
A
0
0.5
VF, FORWARD VOLTAGE (VOLTS)
40
10
VR = 15 Vdc
-60
0 +100
T
, AMBIENT TEMPERATURE (°C)
A
0.80.6 0.90.7
1.0
+140+60+20-20
Figure 3. Diode Capacitance
Figure 4. Leakage Current
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