Motorola MPIC2111P, MPIC2111D Datasheet
1
Motorola Power Products Division Advanced Data
Power Products Division
The MPIC2111 is a high voltage, high speed, power MOSFET and IGBT driver
with dependent high and low side referenced output channels designed for half–
bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard
CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross–conduction. Internal deadtime is provided to
avoid shoot–through in the output half–bridge. The floating channel can be used to
drive an N–channel power MOSFET or IGBT in the high side configuration which
operates from 10 to 600 volts.
• Floating Channel Designed for Bootstrap Operation
• Fully Operational to +600 V
• Tolerant to Negative Transient Voltage
• dV/dt Immune
• Gate Drive Supply Range from 10 to 20 V
• Undervoltage Lockout for Both Channels
• CMOS Schmitt–triggered Inputs with Pull–down
• Matched Propagation Delay for Both Channels
• Internally Set Deadtime
• High Side Output in Phase with Input
PRODUCT SUMMARY
V
OFFSET 600 V MAX
I
O+/– 200 mA/420 mA
V
OUT 10 – 20 V
t
on/off
(typical)
130 & 90 ns
Deadtime (typical)
700 ns
V
B
8V
CC
IN
COM
HO
V
S
7
6
5
1
2
3
4
V
B
8V
CC
IN
COM
HO
V
S
7
6
5
1
2
3
4
LO LO
PIN CONNECTIONS
8 LEADS DIP
MPIC2111P
8 LEAD SOIC
MPIC2111D
(TOP VIEW)
This document contains information on a new product. Specifications and information herein are subject
to change without notice.
REV 1
Order this document
by MPIC2111/D
SEMICONDUCTOR TECHNICAL DATA
Device
Package
HALF–BRIDGE DRIVER
ORDERING INFORMATION
MPIC2111P PDIP
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
(SO–8)
8
1
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
8
1
MPIC2111D SOIC
Motorola, Inc. 1996
MPIC2111
2
Motorola Power Products Division Advanced Data
SIMPLIFIED BLOCK DIAGRAM
PULSE
GEN
UV
DETECT
PULSE
FILTER
HV
LEVEL
SHIFT
COM
LO
V
CC
V
S
V
B
HO
R
R
S
Q
IN
UV
DETECT
DEAD
TIME
DEAD
TIME
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute
voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions.
Rating
Symbol Min Max Unit
B
V
S
DC
High Side Floating Output Voltage
Low Side Fixed Supply Voltage
V
HO
V
VS–0.3
–0.3
VB+0.3
25
Low Side Fixed Supply Voltage
Low Side Output Voltage
V
CC
V
LO
–0.3
–0.3
25
VCC+0.3
LO
V
IN
CC
+0.3
VCC+0.3
Allowable Offset Supply Voltage Transient dVS/dt – 50 V/ns
*Package Power Dissipation @ TC ≤ +25°C (8 Lead DIP)
(8 Lead SOIC)
P
D
–
–
–
1.0
0.625
Watt
Thermal Resistance, Junction to Ambient (8 Lead DIP)
(8 Lead SOIC)
R
θJA
–
–
125
200
°C/W
Operating and Storage Temperature Tj, T
stg
–55 150 °C
Lead Temperature for Soldering Purposes, 10 seconds T
L
– 260 °C
RECOMMENDED OPERATING CONDITIONS
The Input/Output logic timing Diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15 V differential.
High Side Floating Supply Absolute Voltage
V
B
VS+10 VS+20
High Side Floating Supply Offset Voltage V
S
Note 1 600
High Side Floating Output Voltage V
HO
V
S
V
B
Low Side Fixed Supply Voltage V
CC
10 20
Low Side Output Voltage V
LO
0 V
CC
Logic Input Voltage V
IN
0 V
CC
Ambient Temperature T
A
–40 125 °C
Note 1: Logic operational for VS of –5 to +600 V. Logic state held for VS of –5 V to –VBS.
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
Logic Input Voltage
V
B
–0.3
VB–25
–0.3
625
VB+0.3
V
DC
V
mA
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