Motorola MPF102 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

  

N–Channel — Depletion

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V Drain–Gate Voltage V Gate–Source Voltage V Gate Current I Total Device Dissipation @ TA = 25°C

Derate above 25°C Junction Temperature Range T Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage

(IG = –10 µAdc, VDS = 0) Gate Reverse Current

(VGS = –15 Vdc, VDS = 0)

(VGS = –15 Vdc, VDS = 0, TA = 100°C) Gate–Source Cutoff Voltage

(VDS = 15 Vdc, ID = 2.0 nAdc) Gate–Source Voltage

(VDS = 15 Vdc, ID = 0.2 mAdc)

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

(VDS = 15 Vdc, VGS = 0 Vdc)

(1)

SMALL–SIGNAL CHARACTERISTICS

Forward Transfer Admittance

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

(VDS = 15 Vdc, VGS = 0, f = 100 MHz) Input Admittance

(VDS = 15 Vdc, VGS = 0, f = 100 MHz) Output Conductance

(VDS = 15 Vdc, VGS = 0, f = 100 MHz) Input Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

1. Pulse Test; Pulse Width v 630 ms, Duty Cycle v 10%.

(1)

DS DG GS

stg

= 25°C unless otherwise noted)

GATE

2 SOURCE

25 Vdc 25 Vdc

–25 Vdc

10 mAdc

350

2.8

125 °C

–65 to +150 °C

mW/°C

1 DRAIN

(BR)GSS

GSS

GS(off)

DSS

yfs

Re(yis) — 800

Re(yos) — 200

iss

rss

–25 — Vdc

— —

— –8.0 Vdc

–0.5 –7.5 Vdc

2.0 20 mAdc

2000 1600

— 7.0 pF

— 3.0 pF

Order this document

by MPF102/D

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CASE 29–04, STYLE 5

TO–92 (TO–226AA)

–2.0 –2.0

7500

—

nAdc µAdc

mhos

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

MPF102

POWER GAIN

f = 100 MHz

, POWER GAIN (dB)

8.0

4.0

2.0

0 4.0 6.0 8.0 10 12 14

Figure 1. Effects of Drain Current

NEUTRALIZING

COIL INPUT TO 50

SOURCE

*L1 17 turns, (approx. — depends upon circuit layout) AWG #28

enameled copper wire, close wound on 9/32″ ceramic coil form. Tuning provided by a powdered iron slug.

*L2 4–1/2 turns, AWG #18 enameled copper wire, 5/16″ long,

3/8″ I.D. (AIR CORE).

*L3 3–1/2 turns, AWG #18 enameled copper wire, 1/4″ long,

3/8″ I.D. (AIR CORE).

Ω

Adjust VGS for ID = 50 mA VGS < 0 Volts

′

L3R

CASE

NOTE: The noise source is a hot–cold body

COMMON

+15 V

(AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent).

Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit

400 MHz

ID, DRAIN CURRENT (mA)

ID = 5.0 mA

= 25°C

channel

VDS = 15 Vdc VGS = 0 V

Reference

Designation

TO 500

Ω

LOAD

**L1 6 turns, (approx. — depends upon circuit layout) AWG #24

enameled copper wire, close wound on 7/32″ ceramic coil form. Tuning provided by an aluminum slug.

**L2 1 turn, AWG #16 enameled copper wire, 3/8″ I.D.

(AIR CORE).

**L3 1/2 turn, AWG #16 enameled copper wire, 1/4″ I.D.

(AIR CORE).

C2 1000 pF 17 pF C3 3.0 pF 1.0 pF C4 1–12 pF 0.8–8.0 pF C5 1–12 pF 0.8–8.0 pF C6 0.0015 µF 0.001 µF C7 0.0015 µF 0.001 µF L1 3.0 µH* 0.2 µH** L2 0.15 µH* 0.03 µH** L3 0.14 µH* 0.022 µH**

VALUE

100 MHz 400 MHz

7.0 pF 1.8 pF

Motorola Small–Signal Transistors, FETs and Diodes Device Data

8.0

NOISE FIGURE

ID = 5.0 mA

channel

= 25°C)

6.5

5.5

MPF102

VDS = 15 V VGS = 0 V

6.0

4.0

NF, NOISE FIGURE (dB)

2.0 100 MHz

0 4.0 6.0 8.0 10 12 14

2.0

f = 400 MHz

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

Figure 3. Effects of Drain–Source Voltage Figure 4. Effects of Drain Current

4.5

3.5

NF, NOISE FIGURE (dB)

16 18 20

2.5

1.5 0 4.0 6.0 8.0 10 12 14

100 MHz

2.0

INTERMODULA TION CHARACTERISTICS

+40 +20

VDS = 15 Vdc

0 –20 –40 –60 –80

–100 –120

out

P , OUTPUT POWER PER TONE (dB)

–140 –160

–120 –100 –80 –60 –40 –20 0 +20

f1 = 399 MHz f2 = 400 MHz

FUNDAMENT AL OUTPUT @ I

0.25 I

DSS

Pin, INPUT POWER PER TONE (dB)

3RD ORDER INTERCEPT

3RD ORDER IMD OUTPUT @ I

0.25 I

DSS

f = 400 MHz

ID, DRAIN CURRENT (mA)

DSS

Figure 5. Third Order Intermodulation Distortion

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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