MPC953
ECLinPS and ECLinPS Lite
DL140 — Rev 3
3 MOTOROLA
DC CHARACTERISTICS (TA = 0° to 70°C, VCC = 3.3V ±5%)
Symbol Characteristic Min Typ Max Unit Condition
V
IH
Input HIGH Voltage LVCMOS Inputs 2.0 3.6 V
V
IL
Input LOW Voltage LVCMOS Inputs 0.8 V
V
PP
Peak–to–Peak Input Voltage PECL_CLK 300 1000 mV
V
CMR
Common Mode Range PECL_CLK VCC–1.5 VCC–0.6 mV Note 1.
V
OH
Output HIGH Voltage 2.4 V IOH = –40mA, Note 2.
V
OL
Output LOW Voltage 0.5 V IOL = 40mA, Note 2.
I
IN
Input Current ±120 µA
C
IN
Input Capacitance 4 pF
C
pd
Power Dissipation Capacitance 25 pF Per Output
I
CC
Maximum Quiescent Supply Current 75 mA All VCC Pins
I
CCPLL
Maximum PLL Supply Current 15 20 mA VCCA Pin Only
1. V
CMR
is the difference from the most positive side of the differential input signal. Normal operation is obtained when the “HIGH” input is within
the V
CMR
range and the input swing lies within the VPP specification.
2. The MPC953 outputs can drive series or parallel terminated 50Ω (or 50Ω to VCC/2) transmission lines on the incident edge (see Applications
Info section).
PLL INPUT REFERENCE CHARACTERISTICS (TA = 0 to 70°C)
Symbol Characteristic Min Max Unit Condition
f
ref
Reference Input Frequency Note 3. Note 3. MHz
f
refDC
Reference Input Duty Cycle 25 75 %
3. Maximum and minimum input reference is limited by the VCO lock range and the feedback divider.
AC CHARACTERISTICS (TA = 0°C to 70°C, VCC = 3.3V ±5%)
Symbol Characteristic Min Typ Max Unit Condition
tr, t
f
Output Rise/Fall Time 0.10 1.0 ns 0.8 to 2.0V
t
pw
Output Duty Cycle 45 50 55 %
t
sk(O)
Output–to–Output Skews (Relative to QFB) ±75 ps
f
VCO
PLL VCO Lock Range 200 350 MHz
f
max
Maximum Output Frequency 50 87.5 MHz VCO_SEL = ‘0’
tpd(lock) Input to Ext_FB Delay (with PLL Locked) X–100 X
(Note 4.)
X+100 ps f
ref
= 75MHz
tpd(bypass) Input to Q Delay (with PLL Bypassed) 5 10 ns
t
PLZ,HZ
Output Disable Time 7 ns
t
PZL
Output Enable Time 6 ns
t
jitter
Cycle–to–Cycle Jitter (Peak–to–Peak) 100 ps
t
lock
Maximum PLL Lock Time 10 ms
4. X will be targeted for 0ns, but may vary from target by ±150ps based on characterization of silicon.