Motorola MMDF3P03HDR2 Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
Dual HDTMOS devices are an advanced series of power
MOSFETs which utilize Motorola’s High Cell Density TMOS
process. Dual HDTMOS devices are designed for use in low
voltage, high speed switching applications where power efficiency
is important. Typical applications are dc–dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also
be used for low voltage motor controls in mass storage products
such as disk drives and tape drives.
• Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
30 Vdc
Gate–to–Source Voltage — Continuous V
GS
± 20 Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Single Pulse (tp ≤ 10 µs)
I
D
I
DM
3.0
15
Adc
Apk
Source Current — Continuous @ TA = 25°C I
S
2.5 Adc
Total Power Dissipation @ TA = 25°C
(1)
P
D
2.0 Watts
Operating and Storage Temperature Range TJ, T
stg
– 55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W)
E
AS
450 mJ
Thermal Resistance — Junction–to–Ambient R
θJA
62.5 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 sec. T
L
260 °C
DEVICE MARKING
D3P03
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMDF3P03HDR2 13″ 12 mm embossed tape 2500
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMDF3P03HD/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–1
Drain–2
Drain–2
D
S
G
CASE 751–05, Style 11
SO–8
DUAL TMOS
POWER MOSFET
30 VOLTS
R
DS(on)
= 100 m
W
Motorola Preferred Device
REV 1
MMDF3P03HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)
V
(BR)DSS
30 — —
Vdc
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
1.0
20
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I
GSS
— — 100 nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0 — —
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.5 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
R
DS(on)
—
—
0.075
0.12
0.1
0.16
Ω
Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc) g
FS
— 6.0 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
V
= 24 Vdc
C
iss
— 425 600 pF
Output Capacitance
(V
DS
= 24
Vdc
,
VGS = 0 Vdc,
C
oss
— 209 300
Transfer Capacitance
f = 1.0 MHz)
C
rss
— 57.2 80
SWITCHING CHARACTERISTICS
(2)
Turn–On Delay Time
t
d(on)
— 11.7 23.4
ns
Rise Time
(V
DD
=
15 Vd
c,
VGS = 10 Vdc,
t
r
— 15.8 31.6
Turn–Off Delay Time
GS
,
ID = 1.0 Adc,
t
d(off)
— 167.3 334.6
Fall Time
R
G
=
6.0 Ω)
t
f
— 102.6 205.2
Gate Charge
Q
T
— 14.8 29.6
nC
(See Figure 8)
(VDS = 10 Vdc,
Q
1
— 1.7 —
I
D
= 3.5 Adc,
VGS = 10 Vdc)
Q
2
— 4.7 —
GS
)
Q
3
— 3.42 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (IS = 1.7 Adc, VGS = 0 Vdc)
(IS = 1.7 Adc, VGS = 0 Vdc,
TJ = 125°C)
V
SD
—
—
0.9
0.7
1.2
—
Vdc
Reverse Recovery Time
t
rr
— 77.4 —
ns
(IS = 3.5 Adc,
t
a
— 19.9 —
V
GS
=
0 Vd
c,
dIS/dt = 100 A/µs)
t
b
— 57.5 —
Reverse Recovery Stored Charge
S
µ )
Q
RR
— 0.088 — µC
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
MMDF3P03HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
2.9 V
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Gate–T o–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
1.2 2.00
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
6.0
4.0
5.0
3.0
VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)
4.5 5.01.5
4.0
2.0
1.0
0
8.0 102.0
VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)
0.8
0.4
0.3
0.2
0.1
0
ID, DRAIN CURRENT (AMPS)
1.51.0
0.18
0.12
0.10
0.08
0.06
0.04
2.09.0
–25 25–50
TJ, JUNCTION TEMPERATURE (
°
C)
1.2
0.8
0.6
0.4
0.2
0
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
5.0 300
100
1.0
150
I
D
, DRAIN CURRENT (AMPS)
I
R
2.0
1.0
0
0.60.2 0.4 0.8 1.0 1.4 1.6 2.0 2.5 3.0 3.5 4.0
3.0
5.0
6.0
3.0 4.0 5.0 6.0 7.0 4.0 5.53.0 4.5 5.02.5
, DRAIN–TO–SOURCE RESIST ANCE (NORMALIZED)R
DS(on)
50 10075
1.0
10 20 25
10
I
DSS
, LEAKAGE (nA)
1.8
, DRAIN CURRENT (AMPS)
D
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
DS(on)
0.5
R , DRAIN–TO–SOURCE RESISTANCE (OHMS)
DS(on)
125 150
1.6
1.4
VGS = 10 V
ID = 1.5 A
VGS = 0 V
TJ = 125°C
100°C
TJ = 25°C
VGS = 4.5 V
10 V
TJ = 25°C
ID = 3 A
VDS ≥ 10 V
TJ = –55°C
100°C
25°C
TJ = 25°C
2.7 V
3.1 V
3.3 V
3.5 V
3.7 V
3.9 V
3.5
0.16
0.14
0.6
0.7
VGS = 10 V
4.1 V
4.5 V
6.0 V
4.3 V
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