MOTOROLA MMDF2N02E Technical data



DUAL TMOS MOSFET

3.6 AMPERES
25 VOLTS

R

DS(on)

= 0.1 OHM



Source–1

1
2
3
4

8
7
6
5

Top View

Gate–1

Source–2

Gate–2

Drain–1
Drain–1
Drain–2
Drain–2

D

S

G

CASE 751–05, Style 11

SO–8

1

Motorola TMOS Power MOSFET Transistor Device Data

  

Medium Power Surface Mount Products

  
  

MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s TMOS process. These miniature surface
mount MOSFETs feature ultra low R

DS(on)

and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc–dc
converters, a nd power m anagement in portable a nd battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The a valanche energy i s specified to e liminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.

• Ultra Low R

DS(on)

Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• I

DSS

Specified at Elevated Temperatures

• Avalanche Energy Specified

• Mounting Information for SO–8 Package Provided

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DSS

25 Vdc

Gate–to–Source Voltage — Continuous V

GS

± 20 Vdc

Drain Current — Continuous @ TA = 25°C

Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)

I

D

I

D

I

DM

3.6

2.5
18

Adc

Apk

Total Power Dissipation @ TA = 25°C

(1)

P

D

2.0 W

Operating and Storage Temperature Range TJ, T

stg

–55 to 150 °C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 6.0 mH, RG = 25 Ω)

E

AS

245

mJ

Thermal Resistance, Junction to Ambient

(1)

R

θJA

62.5 °C/W

Maximum Lead Temperature for Soldering Purposes, 0.0625″ from case for 10 seconds T

L

260 °C

DEVICE MARKING

F2N02

(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.

ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MMDF2N02ER2 13″ 12 mm embossed tape 2500

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s, E–FET and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

Order this document

by MMDF2N02E/D



SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1996

REV 5

查询MMDF2N02E/D供应商

MMDF2N02E

2

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

V

(BR)DSS

25 — —

Vdc

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

I

DSS

—
—

—
—

1.0
10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I

GSS

— — 100 nAdc

ON CHARACTERISTICS

(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc

V

GS(th)

1.0 2.0 3.0

Vdc

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)

R

DS(on)

—
—

0.083

0.110

0.100

0.200

Ohm

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc) g

FS

1.0 2.6 — Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

— 380 532 pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

C

oss

— 235 329

Transfer Capacitance

f = 1.0 MHz)

C

rss

— 55 110

SWITCHING CHARACTERISTICS

(2)

Turn–On Delay Time

t

d(on)

— 7.0 21

Rise Time

t

r

— 17 30

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 6.0 Ω)

t

d(off)

— 27 48

Fall Time

G

= 6.0 Ω)

t

f

— 18 30

Turn–On Delay Time

t

d(on)

— 10 30

Rise Time

t

r

— 35 70

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 9.1 Ω)

t

d(off)

— 19 38

Fall Time

G

= 9.1 Ω)

t

f

— 25 50

Gate Charge

Q

T

— 10.6 30 nC

DS

= 16 Vdc, ID = 2.0 Adc,

Q

1

— 1.3 —

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q

2

— 2.9 —

Q

3

— 2.7 —

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(1)

(IS = 2.0 Adc, VGS = 0 Vdc) V

SD

— 1.0 1.4 Vdc

t

rr

— 34 66

See Figure 11

S

= 2.0 Adc, VGS = 0 Vdc,

t

a

— 17 —

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

t

b

— 17 —

Reverse Recovery Storage Charge Q

RR

— 0.03 — µC

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.

Reverse Recovery Time

(VDD = 10 Vdc, ID = 2.0 Adc,

(VDD = 10 Vdc, ID = 2.0 Adc,

(V

(I

ns

ns

MMDF2N02E

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0 0.25 0.75 1.5 2

0

1

3

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

I

D

, DRAIN CURRENT (AMPS)

4

2

TJ = 25°C

2.7 V

0.5

1.751.251

5

6

2.5 V

2.9 V

3.1 V

3.3 V

3.5 V

3.7 V

4.5 V

4.3 V

3.9 V

4.1 V

VGS = 10 V

7

0

I

D

, DRAIN CURRENT (AMPS)

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

VDS ≥ 10 V

TJ = 25

°

C

TJ = –55°C

25°C

100°C

2

4

6

5

1

2 2.5 3 3.5 4

3

7

1.5

R

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

0.4

0.5

0.6

0.3

0.1

0.2

0

2 3 4 5 86 7

9 10

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID = 3.5 A
TJ = 25

°

C

R

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

0

ID, DRAIN CURRENT (AMPS)

0.15

0 1 2 5 6

0.05

0.1

3 4

10 V

VGS = 4.5

TJ = 25°C

7

R

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)

TJ, JUNCTION TEMPERATURE (°C)

–50 0 50 100 150

0

0.5

1.0

1.5

2.0
VGS = 10 V

ID = 3.5 A

1257525–25

I

DSS

, LEAKAGE (nA)

1

100

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

10

5 10 15 20

VGS = 0 V

TJ = 125°C

100°C

1000

10000

25°C

25

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus

Gate–to–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–to–Source Leakage Current

versus Voltage