Motorola MMDF2C03HDR2 Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFET s feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain-to-source diode has a v ery low reverse recovery t ime.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc-dc converters, and p ower management i n
portable a nd battery p owered p roducts such as c omputers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and t ape drives. T he avalanche e nergy i s specified t o
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
• Ultra Low R
DS(on)
Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO-8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO-8 Package Provided
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
(1)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
30 Vdc
Gate–to–Source Voltage V
GS
± 20 Vdc
Drain Current — Continuous N–Channel
P–Channel
Drain Current — Pulsed N–Channel
P–Channel
I
D
I
DM
4.1
3.0
21
15
A
Operating and Storage Temperature Range TJ, T
stg
– 55 to 150 °C
Total Power Dissipation @ TA= 25°C
(2)
P
D
2.0 Watts
Thermal Resistance — Junction to Ambient
(2)
R
θJA
62.5 °C/W
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 V, VGS = 5.0 V, Peak IL = 9.0 Apk, L = 8.0 mH, RG = 25 Ω) N–Channel
(VDD = 30 V, VGS = 5.0 V, Peak IL = 6.0 Apk, L = 18 mH, RG = 25 Ω) P–Channel
E
AS
324
324
mJ
Maximum Lead Temperature for Soldering, 0.0625″ from case. Time in Solder Bath is 10 seconds. T
L
260 °C
DEVICE MARKING
D2C03
(1) Negative signs for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMDF2C03HDR2 13″ 12 mm embossed tape 2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMDF2C03HD/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
D
S
G
P–Channel
D
S
G
N–Channel
CASE 751–05, Style 14
SO–8
COMPLEMENTARY
DUAL TMOS POWER FET
2.0 AMPERES
30 VOLTS
R
DS(on)
= 0.070 OHM
(N-CHANNEL)
R
DS(on)
= 0.200 OHM
(P-CHANNEL)
Motorola Preferred Device
N–Source
1
2
3
4
8
7
6
5
Top View
N–Gate
P–Source
P–Gate
N–Drain
N–Drain
P–Drain
P–Drain
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
MMDF2C03HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(1)
Characteristic
Symbol Polarity Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
V
(BR)DSS
— 30 — —
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
I
DSS
(N)
(P)
—
—
—
—
1.0
1.0
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0) I
GSS
— — — 100 nAdc
ON CHARACTERISTICS
(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
V
GS(th)
(N)
(P)
1.0
1.0
1.7
1.5
3.0
2.0
Vdc
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
R
DS(on)
(N)
(P)
—
—
0.06
0.17
0.070
0.200
Ohm
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
R
DS(on)
(N)
(P)
—
—
0.065
0.225
0.075
0.300
Ohm
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
g
FS
(N)
(P)
2.0
2.0
3.6
3.4
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
(N)
(P)
—
—
450
397
630
550
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0
Vdc,
f = 1.0 MHz)
C
oss
(N)
(P)
—
—
160
189
225
250
Transfer Capacitance
f = 1.0 MHz)
C
rss
(N)
(P)
—
—
35
64
70
126
SWITCHING CHARACTERISTICS
(3)
Turn–On Delay Time
t
d(on)
(N)
(P)
—
—
12
16
24
32
Rise Time
Adc,
VGS = 4.5 Vdc,
RG = 9.1 Ω)
t
r
(N)
(P)
—
—
65
18
130
36
Turn–Off Delay Time
t
d(off)
(N)
(P)
—
—
16
63
32
126
Fall Time
t
f
(N)
(P)
—
—
19
194
38
390
Turn–On Delay Time
t
d(on)
(N)
(P)
—
—
8.0
9.0
16
18
Rise Time
Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
t
r
(N)
(P)
—
—
15
10
30
20
Turn–Off Delay Time
t
d(off)
(N)
(P)
—
—
30
81
60
162
Fall Time
t
f
(N)
(P)
—
—
23
192
46
384
Total Gate Charge
Q
T
(N)
(P)
—
—
11.5
14.2
16
19
nC
Gate–Source Charge
= 3.0 Adc,
VGS = 10 Vdc)
Q
1
(N)
(P)
—
—
1.5
1.1
—
—
= 2.0 Adc,
VGS = 10 Vdc)
Q
2
(N)
(P)
—
—
3.5
4.5
—
—
VGS = 10 Vdc)
Q
3
(N)
(P)
—
—
2.8
3.5
—
—
(1) Negative signs for P–Channel device omitted for clarity. (continued)
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
Gate–Drain Charge
(VDD = 15 Vdc, ID = 3.0
(VDD = 15 Vdc, ID = 2.0
(VDD = 15 Vdc, ID = 3.0
(VDD = 15 Vdc, ID = 2.0
(VDS = 10 Vdc, I
(VDS = 24 Vdc, I
Adc,
Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
Adc,
Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
D
D
ns
MMDF2C03HD
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T
A
= 25°C unless otherwise noted)
(1)
Characteristic
Symbol Polarity Min Typ Max Unit
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage
(2)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc)
V
SD
(N)
(P)
—
—
0.82
1.82
1.2
2.0
Vdc
t
rr
(N)
(P)
—
—
24
42
—
—
F
= IS,
t
a
(N)
(P)
—
—
17
16
—
—
(IF = IS,
dIS/dt = 100 A/µs)
t
b
(N)
(P)
—
—
7.0
26
—
—
Reverse Recovery Storage Charge Q
RR
(N)
(P)
—
—
0.025
0.043
—
—
µC
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel P–Channel
3.9 V
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0 0.4 0.8 1.2 1.6 2
0
1
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
4
2
TJ = 25°C
2.7 V
0.2 0.6
1.81.41
5
6
2.5 V
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
4.5 V
4.3 V
3.9 V
4.1 V
VGS = 10 V
0
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS ≥ 10 V
25°C
2
4
6
5
1
2 2.5 3 3.5 4
3
0 0.2 0.4 0.6 0.8 2
0
2
3
4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
TJ = 25°C
VGS = 10 V
1 1.2
2.7 V
2.5 V
1
1.4 1.6 1.8
1.5 1.7 1.9 2.1 2.3 3.7
0
2
3
4
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS ≥ 10 V
TJ = 100°C
25
°C
–55°C
2.512.7 2.9 3.1 3.3 3.5
TJ = 100°C
–55°C
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
4.5 V
Reverse Recovery Time
(I
ns
MMDF2C03HD
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel P–Channel
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0.4
0.5
0.6
0.3
0.1
0.2
0
2 3 4 5 86 7
9 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID = 1.5 A
TJ = 25
°
C
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0.05
ID, DRAIN CURRENT (AMPS)
0.08
0 0.5 1 2.5 3
0.06
0.07
1.5 2
10 V
VGS = 4.5
TJ = 25°C
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
–50 0 50 100 150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 1.5 A
1257525–25
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0 0.5 1 1.5 2 4
0.10
0.15
0.20
0.25
0.30
TJ = 25°C
VGS = 4.5 V
2.5 3 3.5
10 V
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0 1 2 3 4 10
0
0.1
0.3
0.4
0.6
ID = 1 A
TJ = 25
°
C
0.2
5 6 7 8 9
0.5
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
TJ, JUNCTION TEMPERATURE (°C)
–50 0 50 100 150
0.6
VGS = 10 V
ID = 2 A
1.4
(NORMALIZED)
– 25 25 75 125
0.8
1.6
1.2
1.0
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Loading...