Motorola MMDF2C02ER2 Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s TMOS process. These miniature surface
mount MOSFETs feature ultra low R
DS(on)
and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc–dc
converters, a nd power m anagement in portable a nd battery
powered p roducts such a s computers, p rinters, c ellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The a valanche energy i s specified t o eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Ultra Low R
DS(on)
Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• Avalanche Energy Specified
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
(1)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
25 Vdc
Gate–to–Source Voltage V
GS
± 20 Vdc
Drain Current — Continuous N–Channel
P–Channel
— Pulsed N–Channel
P–Channel
I
D
I
DM
3.6
2.5
18
13
Adc
Operating and Storage Temperature Range TJ and T
stg
– 55 to 150 °C
Total Power Dissipation @ TA= 25°C
(2)
P
D
2.0 Watts
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 V, VGS = 10 V, Peak IL = 9.0 A, L = 6.0 mH, RG = 25 Ω) N–Channel
(VDD = 20 V, VGS = 10 V, Peak IL = 7.0 A, L = 10 mH, RG = 25 Ω) P–Channel
E
AS
245
245
mJ
Thermal Resistance — Junction to Ambient
(2)
R
θJA
62.5 °C/W
Maximum Lead Temperature for Soldering, 0.0625″ from case. Time in Solder Bath is 10 seconds. T
L
260 °C
DEVICE MARKING
F2C02
(1) Negative signs for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMDF2C02ER2 13″ 12 mm embossed tape 2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDF2C02E/D
Motorola, Inc. 1996
COMPLEMENTARY
DUAL TMOS POWER FET
2.5 AMPERES
25 VOLTS
R
DS(on)
= 0.100 OHM
(N–CHANNEL)
R
DS(on)
= 0.25 OHM
(P–CHANNEL)
CASE 751–05, Style 14
SO–8
N–Source
1
2
3
4
8
7
6
5
Top View
N–Gate
P–Source
P–Gate
N–Drain
N–Drain
P–Drain
P–Drain
D
S
G
P–Channel
D
S
G
N–Channel
REV 5
MMDF2C02E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(1)
Characteristic
Symbol Polarity Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
V
(BR)DSS
— 25 — —
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
I
DSS
(N)
(P)
—
—
—
—
1.0
1.0
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0) I
GSS
— — — 100 nAdc
ON CHARACTERISTICS
(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
V
GS(th)
— 1.0 2.0 3.0
Vdc
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
R
DS(on)
(N)
(P)
—
—
—
—
0.100
0.250
Ohm
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
R
DS(on)
(N)
(P)
—
—
—
—
0.200
0.400
Ohm
On–State Drain Current
(VDS = 5.0 Vdc, VGS = 4.5 Vdc)
I
D(on)
(N)
(P)
2.0
2.0
—
—
—
—
Adc
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
g
FS
(N)
(P)
1.0
1.0
2.6
2.8
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
(N)
(P)
—
—
380
340
532
475
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
(N)
(P)
—
—
235
220
329
300
Transfer Capacitance
C
rss
(N)
(P)
—
—
55
75
110
150
SWITCHING CHARACTERISTICS
(3)
Turn–On Delay Time
(V
DD
= 10 Vdc, ID = 2.0 Adc,
t
d(on)
(N)
(P)
—
—
10
20
30
40
ns
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc,
RG = 9.1 Ω)
t
r
(N)
(P)
—
—
35
40
70
80
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 1.0 Adc,
V
= 5.0 Vdc,
t
d(off)
(N)
(P)
—
—
19
53
38
106
Fall Time
VGS = 5.0 Vdc,
RG = 25 Ω)
t
f
(N)
(P)
—
—
25
41
50
82
Turn–On Delay Time
(V
DD
= 10 Vdc, ID = 2.0 Adc,
t
d(on)
(N)
(P)
—
—
7.0
13
21
26
Rise Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
t
r
(N)
(P)
—
—
17
29
30
58
Turn–Off Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
V
= 10 Vdc,
t
d(off)
(N)
(P)
—
—
27
30
48
60
Fall Time
VGS = 10 Vdc,
RG = 6.0 Ω)
t
f
(N)
(P)
—
—
18
28
30
56
Total Gate Charge
Q
T
(N)
(P)
—
—
10.6
10
30
15
nC
Gate–Source Charge
(V
= 16 Vdc, I
= 2.0 Adc,
Q
1
(N)
(P)
—
—
1.3
1.0
—
—
Gate–Drain Charge
(VDS = 16 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Q
2
(N)
(P)
—
—
2.9
3.5
—
—
Q
3
(N)
(P)
—
—
2.7
3.0
—
—
(1) Negative signs for P–Channel device omitted for clarity. (continued)
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
MMDF2C02E
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T
A
= 25°C unless otherwise noted)
(1)
Characteristic
Symbol Polarity Min Typ Max Unit
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage
(2)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc)
V
SD
(N)
(P)
—
—
1.0
1.5
1.4
2.0
Vdc
Reverse Recovery Time
see Figure 7
t
rr
(N)
(P)
—
—
34
32
66
64
ns
(I
F
= IS,
t
a
(N)
(P)
—
—
17
19
—
—
(IF = IS,
dIS/dt = 100 A/µs)
t
b
(N)
(P)
—
—
17
12
—
—
Q
RR
(N)
(P)
—
—
0.025
0.035
—
—
µC
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel P–Channel
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
3.5 V
0 0.4 0.8 1.2 1.6 2
0
2
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
4
1
3.3 V
TJ = 25°C
VGS = 10
3.7 V
3.9 V
4.1 V
4.3 V
4.5 V
5 V
4.7 V
7 V
0
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
2
3
4
1
2.5 3 3.5 4 4.5
VDS ≥ 10 V
25°C
100°C
TJ = –55°C
0 0.25 0.75 1.5 2
0
1
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
4
2
TJ = 25°C
2.7 V
0.5
1.751.251
5
6
2.5 V
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
4.5 V
4.3 V
3.9 V
4.1 V
VGS = 10 V
0
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS ≥ 10 V
TJ = 25
°
C
TJ = –55°C
25°C
100°C
2
4
6
5
1
2 2.5 3 3.5 4
3
7
7
1.5
MMDF2C02E
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel P–Channel
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation
with Temperature
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
3 4 5 10
0.3
0.4
0.6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.2
6 8
0
0.1
9
7
0.5
ID = 1 A
TJ = 25
°
C
10 V
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0.1
ID, DRAIN CURRENT (AMPS)
0.4
0.5
0.6
0.3
0.2
0 0.5 1 1.5 2
VGS = 4.5
TJ = 25°C
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
–50 0 50 100 150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 2 A
1257525–25
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0.4
0.5
0.6
0.3
0.1
0.2
0
2 3 4 5 86 7
9 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0
ID, DRAIN CURRENT (AMPS)
0.15
0 1 2 5 6
0.05
0.1
3 4
10 V
VGS = 4.5
TJ = 25°C
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
–50 0 50 100 150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 3.5 A
1257525–25
ID = 3.5 A
TJ = 25
°
C
7
Loading...