Motorola MMDF2C01HDR2 Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFET s feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products s uch a s computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
• Ultra Low R
DS(on)
Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
(1)
Rating
Symbol Value Unit
Drain–to–Source Voltage N–Channel
P–Channel
V
DSS
20
12
Vdc
Gate–to–Source Voltage V
GS
± 8.0 Vdc
Drain Current — Continuous N–Channel
P–Channel
— Pulsed N–Channel
P–Channel
I
D
I
DM
5.2
3.4
48
17
A
Operating and Storage Temperature Range TJ and T
stg
–55 to 150 °C
Total Power Dissipation @ TA= 25°C
(2)
P
D
2.0 Watts
Thermal Resistance — Junction to Ambient
(2)
R
θJA
62.5 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds. T
L
260 °C
DEVICE MARKING
D2C01
(1) Negative signs for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMDF2C01HDR2 13″ 12 mm embossed tape 2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMDF2C01HD/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
D
S
G
P–Channel
D
S
G
N–Channel
CASE 751–05, Style 14
SO–8
COMPLEMENTARY
DUAL TMOS POWER FET
2.0 AMPERES
12 VOLTS
R
DS(on)
= 0.045 OHM
(N–CHANNEL)
R
DS(on)
= 0.18 OHM
(P–CHANNEL)
Motorola Preferred Device
N–Source
1
2
3
4
8
7
6
5
Top View
N–Gate
P–Source
P–Gate
N–Drain
N–Drain
P–Drain
P–Drain
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
MMDF2C01HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(1)
Characteristic
Symbol Polarity Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
V
(BR)DSS
(N)
(P)
20
12
—
—
—
—
Vdc
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 20 Vdc)
(VGS = 0 Vdc, VDS = 12 Vdc)
I
DSS
(N)
(P)
—
—
—
—
1.0
1.0
µAdc
Gate–Body Leakage Current
(VGS = ±8.0 Vdc, VDS = 0)
I
GSS
— — — 100
nAdc
ON CHARACTERISTICS
(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
V
GS(th)
(N)
(P)
0.7
0.7
0.8
1.0
1.1
1.1
Vdc
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
R
DS(on)
(N)
(P)
—
—
0.035
0.16
0.045
0.18
Ohm
Drain–to–Source On–Resistance
(VGS = 2.7 Vdc, ID = 2.0 Adc)
(VGS = 2.7 Vdc, ID = 1.0 Adc)
R
DS(on)
(N)
(P)
—
—
0.043
0.2
0.055
0.22
Ohm
Forward Transconductance
(VDS = 2.5 Adc, ID = 2.0 Adc)
(VDS = 2.5 Adc, ID = 1.0 Adc)
g
FS
(N)
(P)
3.0
3.0
6.0
4.75
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
(N)
(P)
—
—
425
530
595
740
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
(N)
(P)
—
—
270
410
378
570
Transfer Capacitance
C
rss
(N)
(P)
—
—
115
177
230
250
SWITCHING CHARACTERISTICS
(3)
Turn–On Delay Time
(V
DD
= 6.0 Vdc, ID = 4.0 Adc,
t
d(on)
(N)
(P)
—
—
13
21
26
45
ns
Rise Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 2.7 Vdc,
RG = 2.3 Ω)
t
r
(N)
(P)
—
—
60
156
120
315
Turn–Off Delay Time
(VDD = 6.0 Vdc, ID = 2.0 Adc,
V
= 2.7 Vdc,
t
d(off)
(N)
(P)
—
—
20
38
40
75
Fall Time
VGS = 2.7 Vdc,
RG = 6.0 Ω)
t
f
(N)
(P)
—
—
29
68
58
135
Turn–On Delay Time
(V
DS
= 6.0 Vdc, ID = 4.0 Adc,
t
d(on)
(N)
(P)
—
—
10
16
20
35
Rise Time
(VDS = 6.0 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
RG = 2.3 Ω)
t
r
(N)
(P)
—
—
42
44
84
90
Turn–Off Delay Time
(VDS = 6.0 Vdc, ID = 2.0 Adc,
V
= 4.5 Vdc,
t
d(off)
(N)
(P)
—
—
24
68
48
135
Fall Time
VGS = 4.5 Vdc,
RG = 6.0 Ω)
t
f
(N)
(P)
—
—
28
54
56
110
Total Gate Charge
Q
T
(N)
(P)
—
—
9.2
9.3
13
13
nC
Gate–Source Charge
(VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)
Q
1
(N)
(P)
—
—
1.3
0.8
—
—
Gate–Drain Charge
(VDS = 6.0 Vdc, ID = 2.0 Adc,
V
= 4.5 Vdc)
Q
2
(N)
(P)
—
—
3.5
4.0
—
—
VGS = 4.5 Vdc)
Q
3
(N)
(P)
—
—
3.0
3.0
—
—
(1) Negative signs for P–Channel device omitted for clarity. (continued)
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
MMDF2C01HD
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T
A
= 25°C unless otherwise noted)
(1)
Characteristic
Symbol Polarity Min Typ Max Unit
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage
(2)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc)
V
SD
(N)
(P)
—
—
0.95
1.69
1.1
2.0
Vdc
Reverse Recovery Time
t
rr
(N)
(P)
—
—
38
48
—
—
ns
(I
F
= IS,
t
a
(N)
(P)
—
—
17
23
—
—
(IF = IS,
dIS/dt = 100 A/µs)
t
b
(N)
(P)
—
—
22
25
—
—
Reverse Recovery Stored Charge Q
RR
(N)
(P)
—
—
0.028
0.05
—
—
µC
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
TYPICAL ELECTRICAL CHARACTERISTICS
0 0.4 0.8
TJ = 25°C
1.2 1.6 2
4.5 V
0.2 0.6 1 1.4 1.8
VGS = 8 V
3.1 V
2.7 V
2.5 V
2.3 V
2.1 V
1.9 V
1.5 V
1.7 V
1.3 V
0 0.4 0.8 1.2 1.6 20.2 0.6 1 1.4 1.8
0
2
4
8
6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
N–Channel P–Channel
1 1.2 1.4 2.2
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
VDS ≥ 10 V
1.6 1.8 2
0
2
4
8
6
25°C
100°C
TJ = –55°C
0 0.4 0.8
0
1
2
4
TJ = 25°C
1.2
4.5 V
3
1.6 2
3.1 V
VGS = 8 V
1.5 V
2.5 V
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
1.7 V
0.2 0.6 1 1.4 1.8
1.9 V
2.1 V
2.3 V
2.7 V
1 1.2 1.4 2.8
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
VDS ≥ 10 V
1.6 1.8 2
0
1
2
4
3
25°C
100°C
TJ = –55°C
2.2 2.4 2.6
MMDF2C01HD
4
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel P–Channel
TJ = 25°C
VGS = 2.7 V
4.5 V
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0 2 4 8
0.03
0.04
0.05
0.06
0.07
0 2 4 8
0.030
0.035
0.040
0.050
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
TJ = 25°C
ID = 2 A
6
–50 –25 0 25 50 75 100 125 150
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0.045
6
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0 2 4 8
0.1
0.20
0.25
0.30
0.35
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25°C
ID = 1 A
6
0.15
Figure 3. On–Resistance versus
Gate–To–Source Voltage
0 0.8 1.6 4
0.10
0.15
0.20
0.30
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ = 25°C
VGS = 2.7 V
4.5 V
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0.25
2.4 3.2
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
–50 –25 0 25 50 75 100 125 150
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.5
1
2
1.5
VGS = 4.5 V
ID = 2 A
0
0.5
1
2
1.5
VGS = 4.5 V
ID = 4 A
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