MOTOROLA MMDF1N05E Technical data
DUAL TMOS MOSFET
50 VOLTS
1.5 AMPERE
R
DS(on)
= 0.30 OHM
D
S
G
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–1
Drain–2
Drain–2
CASE 751–05, Style 11
SO–8
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s TMOS process. These miniature surface
mount MOSFETs feature ultra low R
DS(on)
and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc–dc
converters, a nd power m anagement in portable a nd battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The a valanche energy i s specified to e liminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Ultra Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed
• Avalanche Energy Specified
• Mounting Information for SO–8 Package Provided
• I
DSS
Specified at Elevated Temperature
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DS
50 Volts
Gate–to–Source Voltage — Continuous V
GS
±20 Volts
Drain Current — Continuous
Drain Current — Pulsed
I
D
I
DM
2.0
10
Amps
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V, IL = 2 Apk)
E
AS
300 mJ
Operating and Storage Temperature Range TJ, T
stg
–55 to 150 °C
Total Power Dissipation @ TA = 25°C P
D
2.0 Watts
Thermal Resistance – Junction to Ambient
(1)
R
θJA
62.5 °C/W
Maximum Temperature for Soldering,
Time in Solder Bath
T
L
260
10
°C
Sec
DEVICE MARKING
F1N05
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMDF1N05ER2 13″ 12 mm embossed tape 2500
MiniMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
REV 5
Order this document
by MMDF1N05E/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
查询MMDF1N05E供应商
MMDF1N05E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 250 µA)
V
(BR)DSS
50 — — Vdc
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
I
DSS
— — 250 µAdc
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
I
GSS
— — 100 nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
V
GS(th)
1.0 — 3.0 Vdc
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.6 Adc)
R
DS(on)
R
DS(on)
—
—
—
—
0.30
0.50
Ohms
Forward Transconductance (VDS = 15 V, ID = 1.5 A) g
FS
— 1.5 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 330 —
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
C
oss
— 160 —
Reverse Transfer Capacitance
f = 1.0 MHz)
C
rss
— 50 —
SWITCHING CHARACTERISTICS
(2)
Turn–On Delay Time
t
d(on)
— — 20
Rise Time
DD
= 10 V, ID = 1.5 A, RL = 10 Ω,
t
r
— — 30
Turn–Off Delay Time
(VDD = 10 V, ID = 1.5 A, RL = 10 Ω,
VG = 10 V, RG = 50 Ω)
t
d(off)
— — 40
Fall Time t
f
— — 25
Total Gate Charge
Q
g
— 12.5 —
Gate–Source Charge
(VDS = 10 V, ID = 1.5 A,
V
= 10 V)
Q
gs
— 1.9 —
Gate–Drain Charge
VGS = 10 V)
Q
gd
— 3.0 —
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage
(1)
S
= 1.5 A, VGS = 0 V)
V
SD
— — 1.6 V
Reverse Recovery Time
(IS = 1.5 A, VGS = 0 V)
(dIS/dt = 100 A/µs)
t
rr
— 45 — ns
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
(2) Switching characteristics are independent of operating junction temperature.
(V
(I
pF
ns
nC
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