DUAL TMOS MOSFET
50 VOLTS
1.5 AMPERE
R
DS(on)
= 0.30 OHM
D
S
G
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–1
Drain–2
Drain–2
CASE 751–05, Style 11
SO–8
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS devices are an advanced series of power MOSFETs
which utilize Motorola’s TMOS process. These miniature surface
mount MOSFETs feature ultra low R
DS(on)
and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc–dc
converters, a nd power m anagement in portable a nd battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The a valanche energy i s specified to e liminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Ultra Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed
• Avalanche Energy Specified
• Mounting Information for SO–8 Package Provided
• I
DSS
Specified at Elevated Temperature
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DS
50 Volts
Gate–to–Source Voltage — Continuous V
GS
±20 Volts
Drain Current — Continuous
Drain Current — Pulsed
I
D
I
DM
2.0
10
Amps
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V, IL = 2 Apk)
E
AS
300 mJ
Operating and Storage Temperature Range TJ, T
stg
–55 to 150 °C
Total Power Dissipation @ TA = 25°C P
D
2.0 Watts
Thermal Resistance – Junction to Ambient
(1)
R
θJA
62.5 °C/W
Maximum Temperature for Soldering,
Time in Solder Bath
T
L
260
10
°C
Sec
DEVICE MARKING
F1N05
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MMDF1N05ER2 13″ 12 mm embossed tape 2500
MiniMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
REV 5
Order this document
by MMDF1N05E/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
查询MMDF1N05E供应商
MMDF1N05E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 250 µA)
V
(BR)DSS
50 — — Vdc
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
I
DSS
— — 250 µAdc
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
I
GSS
— — 100 nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
V
GS(th)
1.0 — 3.0 Vdc
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.6 Adc)
R
DS(on)
R
DS(on)
—
—
—
—
0.30
0.50
Ohms
Forward Transconductance (VDS = 15 V, ID = 1.5 A) g
FS
— 1.5 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 330 —
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
C
oss
— 160 —
Reverse Transfer Capacitance
f = 1.0 MHz)
C
rss
— 50 —
SWITCHING CHARACTERISTICS
(2)
Turn–On Delay Time
t
d(on)
— — 20
Rise Time
DD
= 10 V, ID = 1.5 A, RL = 10 Ω,
t
r
— — 30
Turn–Off Delay Time
(VDD = 10 V, ID = 1.5 A, RL = 10 Ω,
VG = 10 V, RG = 50 Ω)
t
d(off)
— — 40
Fall Time t
f
— — 25
Total Gate Charge
Q
g
— 12.5 —
Gate–Source Charge
(VDS = 10 V, ID = 1.5 A,
V
= 10 V)
Q
gs
— 1.9 —
Gate–Drain Charge
VGS = 10 V)
Q
gd
— 3.0 —
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage
(1)
S
= 1.5 A, VGS = 0 V)
V
SD
— — 1.6 V
Reverse Recovery Time
(IS = 1.5 A, VGS = 0 V)
(dIS/dt = 100 A/µs)
t
rr
— 45 — ns
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
(2) Switching characteristics are independent of operating junction temperature.
(V
(I
pF
ns
nC
MMDF1N05E
3
Motorola TMOS Power MOSFET Transistor Device Data
0.1
0
0
7
0 2 4 6
10
8
6
4
2
I
D
, DRAIN CURRENT (AMPS)
10
8
6
4
2
0
0 2 4 6 8 10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current Figure 4. On–Resistance Variation with Temperature
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN–TO–SOURCE ON–RESISTANCE (OHMS)
0 2 4 6 8
ID, DRAIN CURRENT (AMPS) TJ, JUNCTION TEMPERATURE (°C)
–50 0 50 100 150
1.8
1.6
1.2
0.8
0.4
0
R
DS(on)
, DRAIN–TO–SOURCE ON–RESISTANCE
(NORMALIZED)
VGS = 10 V
0.2
0.3
0.4
0.5
100°C
25
°
C
–55
°
C
4 V
1 3 5 8
VGS = 10 V
ID = 1.5 A
TJ = 25°C
5 V
6 V
25°C
0.2
0.6
1
1.4
–25 25 75 125
8 V
4.5 V
10 V
–55°C
25°C
100°C
–55°C
VGS = 3.5 V
VDS ≥ 10 V
100°C
Figure 5. On Resistance versus
Gate–To–Source Voltage
Figure 6. Gate Threshold Voltage Variation
with Temperature
1501251007550250–25–50
1.2
1.1
1
0.9
0.8
0.7
V
GS(th)
, GATE THRESHOLD VOLTAGE (NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
VDS = V
GS
ID = 1 mA
0.5
0.4
0.3
0.2
0
2 3
TJ, JUNCTION TEMPERATURE
ID = 1.5 A
VGS = 0
0.1
4 5 6 7 8 9 10
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
MMDF1N05E
4
Motorola TMOS Power MOSFET Transistor Device Data
0V
GS
V
DS
C
iss
C
oss
161060
12
10
8
6
4
2
0
Qg, TOTAL GATE CHARGE (nC)
V
GS
, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
2 4 8 12 14
Figure 8. Gate Charge versus
Gate–To–Source Voltage
1200
1000
800
600
400
0
20 10 0 20
C, CAPACITANCE (pF)
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
200
15 5 5 10 15
VDS = 25 V
ID = 1.2 A
VDS = 0
C
iss
C
rss
C
rss
VGS = 0
TJ = 25°C
25
SAFE OPERATING AREA INFORMATION
Forward Biased Safe Operating Area
The FBSOA curves define the maximum drain–to–source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned on.
Because these curves include the limitations of simultaneous
high voltage and high current, up to the rating of the device,
they are especially useful to designers of linear systems. The
curves are based on a case temperature of 25°C and a maximum junction temperature of 150°C. Limitations for repetitive
pulses at various case temperatures can be determined by
using the thermal response c urves. Motorola A pplication
Note, AN569, “Transient Thermal Resistance — General
Data and Its Use” provides detailed instructions.
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
10
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
10
0.1
dc
10 ms
1
100
100
Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”
thick single sided) with one die operating, 10s max.
100 µs
10 µs
Figure 10. Thermal Response
t, TIME (s)
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02 1.0E+03
0.001
10
0.0175 Ω0.0710 Ω0.2706 Ω0.5776 Ω0.7086
Ω
107.55 F1.7891 F0.3074 F0.0854 F0.0154 F
Chip
Ambient
Normalized to θja at 10s.
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
MMDF1N05E
5
Motorola TMOS Power MOSFET Transistor Device Data
INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to insure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self–align when subjected to a
solder reflow process.
mm
inches
0.060
1.52
0.275
7.0
0.024
0.6
0.050
1.270
0.155
4.0
SO–8 POWER DISSIPATION
The power dissipation of the SO–8 is a function of the input
pad size. These can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by T
J(max)
, the maximum rated junction
temperature of the die, R
θJA
, the thermal resistance from the
device junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet for the SO–8
package, PD can be calculated as follows:
PD =
T
J(max)
– T
A
R
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this case
is 2.0 Watts.
= 2.0 Watts
The 62.5°C/W for the SO–8 package assumes the
recommended footprint on a glass epoxy printed circuit board
to achieve a power dissipation of 2.0 Watts using the footprint
shown. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal Clad.
Using board material such as Thermal Clad, the power
dissipation can be doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and soldering
should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
150°C – 25°C
PD =
62.5°C/W
MMDF1N05E
6
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
STYLE 11:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
CASE 751–05
SO–8
ISSUE P
SEATING
PLANE
1
4
58
C
K
4X P
A0.25 (0.010)MT B
S S
0.25 (0.010)
M
B
M
8X D
R
M
J
X 45
_
_
F
–A–
–B–
–T–
DIM MIN MAX
MILLIMETERS
A 4.80 5.00
B 3.80 4.00
C 1.35 1.75
D 0.35 0.49
F 0.40 1.25
G 1.27 BSC
J 0.18 0.25
K 0.10 0.25
M 0 7
P 5.80 6.20
R 0.25 0.50
__
G
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE/ Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
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MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MMDF1N05E/D
*MMDF1N05E/D*
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