Motorola MMBZ6V2ALT1, MMBZ15VALT1, MMBZ5V6ALT1 Datasheet
1
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
"%
& "!"% " "!
!" !#$
Transient Voltage Suppressors
for ESD Protection
These dual monolithic silicon zener diodes are designed for applications
requiring transient overvoltage protection capability. They are intended for use
in voltage and ESD sensitive equipment such as computers, printers, business
machines, communication systems, medical equipment and other applications.
Their dual junction common anode design protects two separate lines using
only one package. These devices are ideal for situations where board space is
at a premium.
Specification Features:
• SOT–23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
• Peak Power — 24 or 40 Watts @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 5.0 µA
• ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
Mechanical Characteristics:
• Void Free, Transfer–Molded, Thermosetting Plastic Case
• Corrosion Resistant Finish, Easily Solderable
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel. Replace
the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel.
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (1) MMBZ5V6ALT1, MMBZ6V2ALT1
@ TA ≤ 25°C MMBZ15VALT1, MMBZ20VALT1
P
pk
24
40
Watts
Total Power Dissipation on FR–5 Board (2) @ TA = 25°C
Derate above 25°C
°PD° 225
1.8
°mW°
mW/°C
Thermal Resistance Junction to Ambient R
θJA
556 °C/W
Total Power Dissipation on Alumina Substrate (3) @ TA = 25°C
Derate above 25°C
°PD° 300
2.4
°mW
mW/°C
Thermal Resistance Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature Range T
J
T
stg
– 55 to +150 °C
Lead Solder Temperature — Maximum (10 Second Duration) T
L
260 °C
(1) Non–repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6.
(2) FR–5 = 1.0 x 0.75 x 0.62 in.
(3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBZ5V6ALT1/D
Motorola, Inc. 1996
Rev 1
SOT–23 COMMON ANODE DUAL
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
24 & 40 WATTS
PEAK POWER
CASE 318–08
STYLE 12
LOW PROFILE SOT–23
PLASTIC
PIN 1. CATHODE
2. CATHODE
3. ANODE
1
3
2
Motorola Preferred Devices
1
2
3
MOTOROLA
2
MMBZ5V6ALT1 MMBZ6V2AL T1 MMBZ15V ALT1 MMBZ20V ALT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
Max Reverse
Leakage Current
Max Zener Impedance (5)
Max
Reverse
Max Reverse
Voltage @
Maximum
VZT(3)
(V)
@ IT IR @ VR
ZZT @ IZT
ZZK @ IZK
RSM
(4)
I
RSM
(4)
(Clamping
Voltage)
Temperature
Coefficient of
V
BR
Min Nom Max
(mA)
(µA) (V)
(Ω) (mA)
(Ω) (mA)
I
RSM
(4)
(A)
V
RSM
(V)
(mV/°C)
5.32 5.6 5.88 20 5.0 3.0 11 1600 0.25 3.0 8.0 1.26
5.89 6.2 6.51 1.0 0.5 3.0 — — — 2.76 8.7 2.80
(VF = 1.1 V Max @ IF = 200 mA)
Breakdown Voltage
Max Reverse
Maximum
VBR(3)
(V)
@ I
T
Reverse Voltage
Working Peak
V
RWM
Max Reverse
Leakage Current
I
RWM
Max Reverse
Surge Current
I
RSM
(4)
Voltage @ I
RSM
(4)
(Clamping Voltage)
V
Temperature
Coefficient of
V
Min Nom Max
(mA)
(V)
IR (nA)
(A)
V
RSM
(V)
V
BR
(mV/°C)
14.25 15 15.75 1.0 12.0 50 1.9 21 12.3
19.0 20 21.0 1.0 17.0 50 1.4 28 17.2
(3) VZ/VBR measured at pulse test current IT at an ambient temperature of 25°C.
(4) Surge current waveform per Figure 5 and derate per Figure 6.
(5) ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are
(5) I
Z(AC)
= 0.1 I
Z(DC)
, with AC frequency = 1 kHz.
TYPICAL CHARACTERISTICS
–40 +50
18
BREAKDOWN VOLTAGE (VOLTS)
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
0
TEMPERATURE (
°
C)
+100 +150
15
12
9
6
3
0
(V
Z
, V
BR
@ I
T
)
–40 +25
1000
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (°C)
+85 +125
100
10
1
0.1
0.01
I
R
(nA)
Surge
Current
I
Loading...