Motorola MMBTH10LT1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MMBTH10LT1/D
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
DEVICE MARKING
MMBTH10L T1 = 3EM
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient R
Total Device Dissipation
Alumina Substrate,
Derate above 25°C
Thermal Resistance Junction to Ambient R
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V
Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V
Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V
Collector Cutoff Current (VCB = 25 Vdc, IE = 0) I
Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) I
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
(1)
Characteristic
= 25°C unless otherwise noted)
A
CEO
CBO
EBO
COLLECTOR
3
1
BASE
2
EMITTER
25 Vdc
30 Vdc
3.0 Vdc
Symbol Min Typ Max Unit
(BR)CEO
(BR)CBO
(BR)EBO
CBO
EBO
Motorola Preferred Device
3
1
2
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
P
D
θJA
P
D
θJA
stg
25 — — Vdc
30 — — Vdc
3.0 — — Vdc
— — 100 nAdc
— — 100 nAdc
225
1.8
556 °C/W
300
2.4
417 °C/W
–55 to +150 °C
mW
mW/°C
mW
mW/°C
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
MMBTH10LT1
ELECTRICAL CHARACTERISTICS
Characteristic
ON CHARACTERISTICS
DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) h
Collector–Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) V
Base–Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Common–Base Feedback Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Collector Base Time Constant
(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
(TA = 25°C unless otherwise noted) (Continued)
TYPICAL CHARACTERISTICS
COMMON–BASE y PARAMETERS versus FREQUENCY
(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)
yib, INPUT ADMITTANCE
80
0
Symbol Min Typ Max Unit
FE
CE(sat)
BE
f
T
C
cb
C
rb
rb′C
c
60 — — —
— — 0.5 Vdc
— — 0.95 Vdc
650 — — MHz
— — 0.7 pF
— — 0.65 pF
— — 9.0 ps
70
60
50
40
30
20
ib
yy
10
0
g
ib
–b
ib
200 300 400 500 700
f, FREQUENCY (MHz)
Figure 1. Rectangular Form
70
60
50
40
30
20
10
0
–10
–20
, FORWARD TRANSFER ADMITTANCE (mmhos) , INPUT ADMITT ANCE (mmhos)
ib
–30
100 200 300 400 500 700
–g
fb
f, FREQUENCY (MHz)
Figure 3. Rectangular Form
–10
–20
1000 MHz
–30
ib
jb (mmhos)
–40
–50
1000
–60
10 30 50 70
0204060
yfb, FORWARD TRANSFER ADMITTANCE
60
b
fb
50
40
fb
30
jb (mmhos)
20
1000
10
70 60 50 10 0 –10
200
100
700
400
gib (mmhos)
200
100
Figure 2. Polar Form
400
600
700
1000 MHz
40 30 20 – 20 –30
gfb (mmhos)
Figure 4. Polar Form
80100
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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