Datasheet MMBT5087LT3, MMBT5087LT1 Datasheet (MOTOROLA)

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

  

PNP Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

–50 Vdc

Collector–Base Voltage V

CBO

–50 Vdc

Emitter–Base Voltage V

EBO

–3.0 Vdc

Collector Current — Continuous I

C

–50 mAdc

DEVICE MARKING

MMBT5087LT1 = 2Q

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR-5 Board

(1)

TA = 25°C
Derate above 25°C

P

D

225

1.8

mW

mW/°C

Thermal Resistance, Junction to Ambient R

θJA

556 °C/W

Total Device Dissipation

Alumina Substrate,

(2)

TA = 25°C

Derate above 25°C

P

D

300

2.4

mW

mW/°C

Thermal Resistance, Junction to Ambient R

θJA

417 °C/W

Junction and Storage Temperature TJ, T

stg

–55 to +150 °C

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –1.0 mAdc, IB = 0)

V

(BR)CEO

–50 — Vdc

Collector–Base Breakdown Voltage

(IC = –100 µAdc, IE = 0)

V

(BR)CBO

–50 — Vdc

Collector Cutoff Current

(VCB = –10 Vdc, IE = 0)
(VCB = –35 Vdc, IE = 0)

I

CBO

—
—

–10
–50

nAdc

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMBT5087LT1/D

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SEMICONDUCTOR TECHNICAL DATA



Motorola Preferred Device

1

2

3

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

 Motorola, Inc. 1996

COLLECTOR

3

1

BASE

2

EMITTER

MMBT5087LT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –100 µAdc, VCE = –5.0 Vdc)
(IC = –1.0 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)

h

FE

250
250
250

800

—
—

—

Collector–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

V

CE(sat)

— –0.3 Vdc

Base–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

V

BE(sat)

— 0.85 Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –500 µAdc, VCE = –5.0 Vdc, f = 20 MHz)

f

T

40 — MHz

Output Capacitance

(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)

C

obo

— 4.0 pF

Small–Signal Current Gain

(IC = –1.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz)

h

fe

250 900 —

Noise Figure

(IC = –20 mAdc, VCE = –5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz)
(IC = –100 µAdc, VCE = –5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz)

NF

—
—

2.0

2.0

dB

MMBT5087LT1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL NOISE CHARACTERISTICS

(VCE = –ā5.0 Vdc, TA = 25°C)

Figure 1. Noise Voltage

f, FREQUENCY (Hz)

5.0

7.0

10

3.0

Figure 2. Noise Current

f, FREQUENCY (Hz)

1.0
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.1

BANDWIDTH = 1.0 Hz

RS

≈

0

IC = 10 µA

100 µA

e

n

, NOISE VOLTAGE (nV)

I

n

, NOISE CURRENT (pA)

30 µA

BANDWIDTH = 1.0 Hz

RS

≈ ∞

IC = 1.0 mA

300 µA

100 µA

30 µA

10 µA

10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k

2.0

1.0 mA

0.2

300 µA

NOISE FIGURE CONTOURS

(VCE = –ā5.0 Vdc, TA = 25°C)

500 k

100

200

500

1.0 k

10 k

5.0 k

20 k

50 k

100 k

200 k

2.0 k

1.0 M

500 k

100

200

500

1.0 k

10 k

5.0 k

20 k

50 k

100 k

200 k

2.0 k

1.0 M

Figure 3. Narrow Band, 100 Hz

IC, COLLECTOR CURRENT (µA)

Figure 4. Narrow Band, 1.0 kHz

IC, COLLECTOR CURRENT (µA)

10

0.5 dB

BANDWIDTH = 1.0 Hz

R

S

, SOURCE RESISTANCE (OHMS)

R

S

, SOURCE RESISTANCE (OHMS)

Figure 5. Wideband

IC, COLLECTOR CURRENT (µA)

10

10 Hz to 15.7 kHz

R

S

, SOURCE RESISTANCE (OHMS)

Noise Figure is Defined as:

NF+20 log

10

ƪ

e

n

2

)

4KTRS)

I

n

2

R

S

2

4KTR

S

ƫ

1ń2

= Noise Voltage of the T ransistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10

–23

j/°K)
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)

e

n

I

n

K
T
R

S

1.0 dB

2.0 dB

3.0 dB

20 30 50 70 100 200 300 500 700 1.0 k 10 20 30 50 70 100 200 300 500 700 1.0 k

500 k

100

200

500

1.0 k

10 k

5.0 k

20 k

50 k

100 k

200 k

2.0 k

1.0 M

20 30 50 70 100 200 300 500 700 1.0 k

BANDWIDTH = 1.0 Hz

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

MMBT5087LT1

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 6. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

1.4

Figure 7. Collector Characteristics

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20

50

1.6

100

TJ = 25°C

V

BE(sat)

@ IC/IB = 10

V

CE(sat)

@ IC/IB = 10

V

BE(on)

@ VCE = 1.0 V

*

q

VC

for V

CE(sat)

q

VB

for V

BE

0.1 0.2 0.5

Figure 8. “On” Voltages

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.002

TA = 25°C

IC = 1.0 mA 10 mA 100 mA

Figure 9. Temperature Coefficients

50 mA

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

40

60

80

100

20

0

0

I

C

, COLLECTOR CURRENT (mA)

TA = 25°C

PULSE WIDTH = 300

µ

s

DUTY CYCLE

≤

2.0%

IB = 400 µA

350 µA

300 µA

250 µA

200 µA

*APPLIES for IC/IB ≤ hFE/2

25°C to 125°C

–55°C to 25°C

25°C to 125°C

–55°C to 25°C

0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40

1.2

1.0

0.8

0.6

0.4

0.2
0

2.4

0.8

0

1.6

0.8

1.0 2.0 5.0 10 20

50

100

0.1 0.2 0.5

V

, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

150 µA

100 µA

50 µA

MMBT5087LT1

5

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL DYNAMIC CHARACTERISTICS

C, CAPACITANCE (pF)

Figure 10. Turn–On Time

IC, COLLECTOR CURRENT (mA)

500

Figure 11. Turn–Off Time

IC, COLLECTOR CURRENT (mA)

2.0 5.0 10

20 30 50

1000

Figure 12. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

Figure 13. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

3.01.0

500

0.5

10

t, TIME (ns)

t, TIME (ns)

f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

T

5.0

7.0

10

20

30

50

70

100

300

7.0

70 100

VCC = 3.0 V
IC/IB = 10
TJ = 25°C

td @ V

BE(off)

= 0.5 V

t

r

10

20

30

50

70

100

200

300

500

700

–

ā

2.0

–1.0

VCC = –ā3.0 V
IC/IB = 10
IB1 = I

B2

TJ = 25

°

C

t

s

t

f

50

70

100

200

300

0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

TJ = 25°C

VCE = 20 V

5.0 V

1.0

2.0

3.0

5.0

7.0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05

C

ib

C

ob

200

–

ā

3.0

–

ā

5.0 –ā7.0

–

ā

20

–10

–ā30

–

ā

50 –ā70

–100

TJ = 25°C

Figure 14. Thermal Response

t, TIME (ms)

1.0

0.01

r(t) TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k

50 k

100 k

D = 0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

DUTY CYCLE, D = t1/t

2

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
Z

θ

JA(t)

= r(t)

•

R

θ

JA

T

J(pk)

– TA = P

(pk)

Z

θ

JA(t)

t

1

t

2

P

(pk)

FIGURE 16

MMBT5087LT1

6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TJ, JUNCTION TEMPERATURE (°C)

10

4

–4

0

I

C

, COLLECTOR CURRENT (nA)

Figure 15. Typical Collector Leakage Current

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model
as shown in Figure 16. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 14 was calculated for various duty cycles.

To find Z

θJA(t)

, multiply the value obtained from Figure 14 by the

steady state value R

θJA

.

Example:
Dissipating 2.0 watts peak under the following conditions:

t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.

The peak rise in junction temperature is therefore

∆T = r(t) x P

(pk)

x R

θJA

= 0.22 x 2.0 x 200 = 88°C.

For more information, see AN–569.

10

–2

10

–1

10

0

10

1

10

2

10

3

–200 +20 +40 +60 + 80 + 100 + 120 +140 +160

VCC = 30 V

I

CEO

I

CBO

AND

I

CEX

@ V

BE(off)

= 3.0 V

MMBT5087LT1

7

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct s ize to i nsure proper solder connection

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

SOT–23

mm

inches

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

SOT–23 POWER DISSIPATION

The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum p ad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T

J(max)

, the maximum rated junction temperature of the

die, R

θJA

, the thermal resistance from the device junction to
ambient, and the o perating temperature, TA. Using t he
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.

The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result i n device failure. Therefore, t he
following items s hould always be observed in o rder to
minimize the thermal s tress to w hich t he devices a re
subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.

PD =

T

PD =

150°C – 25°C

556°C/W

J(max)

R

θJA

– T

A

= 225 milliwatts

MMBT5087LT1

8

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

D

J

K

L

A

C

B

S

H

GV

3

1

2

CASE 318–08

ISSUE AE

SOT–23 (TO–236AB)

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

DIMAMIN MAX MIN MAX

MILLIMETERS

0.1102 0.1197 2.80 3.04

INCHES

B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100

J 0.0034 0.0070 0.085 0.177

K 0.0180 0.0236 0.45 0.60

L 0.0350 0.0401 0.89 1.02
S 0.0830 0.0984 2.10 2.50
V 0.0177 0.0236 0.45 0.60

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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MMBT5087LT1/D

*MMBT5087LT1/D*

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