Motorola MJW16206 Datasheet
1
Motorola Bipolar Power Transistor Device Data
SCANSWITCH
NPN Bipolar Power Deflection Transistors
For High and Very High Resolution CRT Monitors
The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar
power transistors. They are specifically designed for use in horizontal deflection
circuits for high and very high resolution, monochrome and color CRT monitors.
• 1200 Volt V
CES
Breakdown Capability
• Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
• Maximum Repetitive Emitter–Base Avalanche Energy Specified (Industry First)
• High Current Capability: Performance Specified at 6.5 Amps
Continuous Rating — 12 Amps Max
Pulsed Rating — 15 Amps Max
• Isolated MJF16206 is UL Recognized
• Fast Switching: 100 ns Inductive Fall Time (Typ)
1000 ns Inductive Storage Time (Typ)
• Low Saturation Voltage
0.25 Volts (Typ) at 6.5 Amps Collector Current
• High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
8.0 V (Min)
MAXIMUM RATINGS
Rating
Symbol
Value
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
Collector–Emitter Breakdown Voltage
V
CES
1200
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector–Emitter Sustaining Voltage
V
CEO(sus)
500
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Emitter–Base Voltage
V
EBO
8.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Isolation Voltage
(RMS for 1 sec., TA = 25_C, Figure 19
Relative Humidity v 30%) Figure 20
V
ISOL
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
V
rms
Collector Current — Continuous
Collector Current — Pulsed (1)
I
C
I
CM
12
15
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Adc
Base Current — Continuous
Base Current — Pulsed (1)
I
B
I
BM
5.0
10
ÎÎÎ
ÎÎÎ
ÎÎÎ
Adc
Repetitive Emitter–Base Avalanche Energy
W
(BER)
0.2
ÎÎÎ
ÎÎÎ
ÎÎÎ
mjoules
Total Power Dissipation @ TC = 25_C
Total Power Dissipation @ TC = 100_C
Derated above 25_C
P
D
150
39
1.49
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Watts
W/_C
Operating and Storage Temperature
TJ, T
stg
–55 to +150
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
Thermal Resistance — Junction to Case
R
θJC
0.67
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C/W
Lead Temperature for Soldering Purposes 1/8″
from the Case for 5 seconds
T
L
260
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
_
C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
SCANSWITCH is a trademark of Motorola Inc.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJW16206/D
Motorola, Inc. 1995
MJW16206
POWER TRANSISTORS
12 AMPERES
1200 VOLTS — V
CES
50 and 150 WATTS
CASE 340F–02
TO–247AE
REV 2
MJW16206
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS (1)
Collector Cutoff Current
(VCE = 1200 Vdc, VBE = 0 V)
(VCE = 850 Vdc, VBE = 0 V)
I
CES
—
—
—
—
250
25
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Emitter–Base Leakage
(VEB = 8.0 Vdc, IC = 0)
I
EBO
—
—
25
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Collector–Emitter Sustaining Voltage (Figure 10)
(IC = 10 mAdc, IB = 0)
V
CEO(sus)
500
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mA, IC = 0)
V
(BR)EBO
8.0
11
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 400 mAdc)
(IC = 6.5 Adc, IB = 1.5 Adc)
V
CE(sat)
—
—
0.15
0.25
1.0
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 6.5 Adc, IB = 1.5 Adc)
V
BE(sat)
—
0.9
1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 12 Adc, VCE = 5.0 Vdc)
h
FE
—
5.0
3.0
24
8.0
6.0
—
13
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
DYNAMIC CHARACTERISTICS
Dynamic Desaturation Interval (Figure 15)
(IC = 6.5 Adc, IB = 1.5 Adc, LB = 0.5 µH)
t
ds
—
250
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ns
Emitter–Base Avalanche Turn–off Energy (Figure 15)
(t = 500 ns, RBE = 22 Ω)
EB
(off)
—
30
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
µjoules
Output Capacitance
(VCE = 10 Vdc, IE = 0, f
test
= 100 kHz)
C
ob
—
180
350
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
Gain Bandwidth Product
(VCE = 10 Vdc, IC = 0.5 A, f
test
= 1.0 MHz)
f
T
—
3.0
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
Collector–Heatsink Capacitance — MJF16206 Isolated Package
(Mounted on a 1″ x 2″ x 1/16″ Copper Heatsink,
VCE = 0, f
test
= 100 kHz)
C
c–hs
—
17
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
SWITCHING CHARACTERISTICS
Inductive Load (Figure 15) (IC = 6.5 A, IB = 1.5 A)
Storage
Fall Time
t
sv
t
fi
—
—
1000
100
2250
250
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ns
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%.
MJW16206
3
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V
BE
, BASE–EMITTER VOLTAGE (VOLTS)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1
0.70.3
Figure 1. Typical DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.2 2 10
100
h
FE
, DC CURRENT GAIN
1 53
30
7
0.5
TJ = 100°C
25°C
–55°C
7
10
3
1
50
VCE = 5 V
IC, COLLECTOR CURRENT (AMPS)
Figure 2. Typical Collector–Emitter
Saturation Voltage
0.5
3
0.2
5
0.05
1
0.1
0.07
0.3
2
0.7
0.5 32 50.7 1
10 20
TJ = 25°C
TJ = 100
°
C
IC/IB1 = 10
0.3
7
10
70
Figure 3. Typical Collector Saturation Region
IB, BASE CURRENT (AMPS)
0.7
0.1
5
0.3
8 A
0.05 2
4 A 6.5 AIC = 2 A
0.07 0.1
0.2 0.5
5
Figure 4. Typical Base–Emitter
Saturation Voltage
0.30.2 0.5
5
0.7
0.1
0.7 201 10
10
2
TJ = 25°C
2 3 5 7
IC, COLLECTOR CURRENT (AMPS)
TC = 25°C
f = 1 MHz
0.3
Figure 5. Typical Capacitance
10K
VR, REVERSE VOLTAGE (VOLTS)
C
ib
0.1
1K
100
10
1 10 100 1K
2K
200
20
3K
300
5K
500
50
0.3 2 30 300200.5 5 50 500
f
T
, TRANSITION FREQUENCY (MHz)
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Typical Transition Frequency
f
(test)
= 1 MHz
TC = 25
°
C
VCE = 10 V
0.1 0.3 0.7 2 5 107
10
0.7
0.2
3
0.1
0.5
5
2
0.5
0.07
0.2
3
7
2
1
3
IC/IB1 = 5 to 10
7
1
0.2
3
0.5
30
0.2 3 200
1
0.3
7
20
5
2
0.3 20
0.7
5
0.2
10 A
TJ = 25°C
TJ = 100
°
C
0.2 0.5 1 3
7K
700
70
7
C, CAPACITANCE (pF)
C
ob
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