Motorola MHW932 Datasheet
1
MHW932MOTOROLA RF DEVICE DATA
The RF Line
. . . designed specifically for the Pan European digital 20 watt, GSM mobile
radio. The MHW932 is capable of wide power range control, operates from a
12.5 volt supply and requires 100 mW of RF input power.
• Specified 12.5 Volt Characteristics:
RF Input Power — 100 mW (20 dBm)
RF Output Power — 32 W
Minimum Gain — 25 dB
Harmonics — –35 dBc Max @ 2.0 f
o
• New Biasing and Control Techniques Providing Dynamic Range and Control Circuit
Bandwidth Ideal for GSM
• 50 Ohm Input/Output Impedances
• Guaranteed Stability and Ruggedness
• Test fixture circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
(Flange Temperature = 25°C)
Rating
Symbol Value Unit
DC Supply Voltage V
S
15.6 Vdc
DC Bias Voltage V
B
5.25 Vdc
RF Input Power P
in
400 mW
RF Output Power P
out
40 W
Operating Case Temperature Range T
C
–30 to +100 °C
Storage Temperature Range T
stg
–30 to +100 °C
ELECTRICAL CHARACTERISTICS
(VS1 = VS2 = VS3 = VS4 = 12.5 Vdc; VB = 5.0 Vdc, TC = +25°C, 50 ohm system, unless otherwise noted)
Characteristic
Symbol Min Max Unit
Frequency Range BW 890 915 MHz
Power Gain (P
out
= 32 W) (1) G
p
25 — dB
Leakage Current (Pin = 0 mW, VB = 0 Vdc, VS1 = VS2 = VS3 = VS4 = 15.6 Vdc) I
L
— 10 mA
Efficiency (P
out
= 32 W) (1) η 23 — %
Input VSWR (P
out
= 32 W) (1) VSWR
in
— 2.0:1 —
Harmonics (P
out
= 32 W) (1) 2.0 f
o
3.0 fo to 5.0 f
o
— –35
–45
dBc
Noise Power (In 30 kHz Bandwidth, 935 to 960 MHz frequency range;
(P
out
= 0.03 to 32 W; VS1 = VS2 = VS3 = VS4 = 10.8 to 15.6 Vdc) (1)
— –65 dBm
Linearity — % AM in Output (P
out
= 0.02 to 32 W; 135 kHz, 1% AM in Input) — — 6.0 %
Output Power, Low Voltage (PIN = 100 mW; VS1 = VS2 = VS3 = VS4 = 10.8 Vdc)
P
out
2
24 — W
Load Mismatch Stress (VS1 = VS2 = VS3 = VS4 = 15.6 Vdc; P
out
= 40 W;
Load VSWR = 10:1, All Phase Angles at Frequency of Test) (1)
ψ No Degradation
In Output Power
Before and After Test
Stability (VS1 = VS2 = VS3 = VS4 = 10.8 to 15.6 Vdc; P
out
= 0.03 to 32 W;
Load VSWR = 6:1, Source VSWR = 3:1,
All Phase Angles at Frequency of Test) (1)
— All Spurious Outputs
More Than 60 dB
Below Desired Signal
NOTE:
1. Adjust Pin for Specified P
out
; Duty Cycle = 12.5%, Period = 4.6 msec
Order this document
by MHW932/D
SEMICONDUCTOR TECHNICAL DATA
32 W
890 to 915 MHz
RF POWER
AMPLIFIER
CASE 301S–02, STYLE 1
Motorola, Inc. 1994
REV 6
MHW932
2
MOTOROLA RF DEVICE DATA
Pin Designations: Element Values:
Pin 1 — RF Input Power @ 20 dBm Max Adjust
Pin 1 — for Output Power
Pin 2 — First Stage Collector Voltage @ 12.5 Vdc
Pin 3 — Second Stage Collector Voltage @ 12.5 Vdc
Pin 4 — Trickle Bias Voltage @ 5.0 Vdc
Pin 5 — Third Stage Collector Supply @ 12.5 Vdc
Pin 6 — Fourth Stage Collector Supply @ 12.5 Vdc
Pin 7 — RF Output Power @ 32 W Nominal
C1 = C2 = C4 = C6 = C8 = C10 = 0.018 µF
C3 = C5 = C7 = C9 = C11 = 2.2 µF
L1–L3 = 0.29 µH
L4 = 0.2 µH
L5 — VR200, Up to 10 A Max IS4
Z1, Z2 = 50 Ohm Microstrip
MHW932 BLOCK DIAGRAM
1 2 3 4 5 7
C1 C2 C3 C4 C5 C6 C7 C8 C9
Z1 Z2
L1 L2 L3 L4
RF INPUT V
S1
V
S2
V
S3
V
B
RF OUTPUT
6
C10 C11
L5
V
S4
Figure 1. Test Circuit Diagram
Loading...