Motorola MHW930 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed specifically for the Pan European Digital Extended EGSM base
station applications at 925 – 960 MHz. The MHW930 operates from a 26 volt
supply and requires 60 mW of RF input power.
• Specified 26 Volt and 25
RF Input Power: 60 mW Max
RF Power Gain: 27 dB Min at 30 W Output Power
RF Output: 30 Watts Min at 1.0 dB Compression Point
Efficiency: 44% Min at 30 Watts Output Power
• 50 Ohm Input/Output Impedances
°C Characteristics:
Order this document
by MHW930/D
30 W
925–960 MHz
RF POWER AMPLIFIER
CASE 301AB–02, STYLE 1
MAXIMUM RATINGS
Rating Symbol Value Unit
DC Supply Voltage V
DC Bias Voltage V
RF Input Power P
RF Output Power P
Operating Case Temperature Range T
Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (V
Characteristic
Frequency Range BW 925 — 960 MHz
VS1 Quiescent Current (Pin = 0 mW) Iqs1 — 65 — mA
VS2 Quiescent Current (Pin = 0 mW) Iqs2 — 130 — mA
Power Gain (P
Output Power at 1 dB Compression P1dB 30 35 — Watts
EFficiency (P
Input VSWR VSWR
Harmonic 2 fo (P
Harmonic 3 fo (P
Reverse Intermodulation Distortion (P
= fc ±600 kHz) (1)
Load Mismatch Stress
(P
= 30 W; Load VSWR = 10:1; All Phase Angles)
out
Stability
(P
= 10 mW – 30 W; Load VSWR = 3:1; All Phase Angles;
out
TC= –10°C to 85°C)
(1) Adjust Pin for specified P
= 30 W) (1) G
out
= 30 W) (1) η 44 49 — %
out
= 30 W) (1) H
out
= 30 W) (1) H
out
.
out
carrier
=26 Vdc; V
S
= 30 W; P
= 26 Vdc;TC= +25°C; 50 Ω system)
BIAS
interferer
at –70 dBc; fi
S
B
in
out
C
stg
Symbol Min Typ Max Unit
p
IN
2
3
IMR — — –80 dBc
ψ No Degradation in Output Power
27 — 31 dB
— — 2:1
— — –35 dBc
— — –45 dBc
All Spurious Outputs More than 70 dB Below
28 Vdc
28 Vdc
22 dBm
50 W
–10 to +100 °C
–30 to +100 °C
Desired Signal
Motorola, Inc. 1997
MHW930MOTOROLA RF DEVICE DATA
1
RF
IN
V
bias
V
S1
V
S2
Figure 1. MHW930 Internal Diagram
RF
OUT
MHW930
2
MOTOROLA RF DEVICE DATA
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