Motorola MHW913 Datasheet


SEMICONDUCTOR TECHNICAL DATA
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by MHW913/D
Designed specifically for the Pan European digital 8.0 watt, GSM mobile
radio. The MHW913 is capable of wide power range control, operates from a
12.5 volt supply and requires less than 100 mW of RF input power.
Specified 12.5 V Characteristics RF Input Power 100 mW (20 dBm) RF Output Power = 14 W Minimum Gain = 21.5 dB Minimum Efficiency = 35%
50 Input/Output Impedance
Guaranteed Stability and Ruggedness
Epoxy Glass Substrate Eliminates Possibility of Substrate
Fracture
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
DC Supply Voltage V
RF Input Power P RF Output Power P Storage Temperature T Operating Case Temperature T
(Flange Temperature = 25°C)
Rating

14 WATT
880–915 MHz
RF POWER AMPLIFIER
CASE 301AB–02, STYLE 1
Symbol Value Unit
bias
VS2, V
out
stg
, S3
in
C
5.0
15.6 200 mW
15 Watt
– 30 to +100 – 30 to +100
Volt
°C °C
ELECTRICAL CHARACTERISTICS (V
Characteristic Symbol Min Max Unit
Frequency Range BW 880 915 MHz Efficiency (P Power Gain (P Harmonic Output (P
Input VSWR (P Linearity — % AM in Output P Output Power at Decreased Voltage
(Pin = 100 mW, VS2 = VS3 = 10.8 Vdc) (1)
(1) Adjust Pin for specified P
REV 3
= 14 W) (1) η 35 %
out
= 14 W) (1) G
out
= 14 W Reference) (1) 2f
out
= 14 W) (1) VSWR
out
= 0.02 to 14 W; 135 kHz, 1.0% AM on Input (1) 6.0 %
out
. (continued)
out
= VS3 = 12.5 Vdc, V
S2
= 4.8 Vdc, TC = 25°C, 50 system, unless otherwise noted)
bias
p o
3f
o
in
P
out
21.5 dB —
— — 3:1
10
–30 –35
dBc
Watt
Motorola, Inc. 1997
MHW913MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS (continued) (V
Load Mismatch Stress (V
Load VSWR = 10:1, All Phase Angles) (1)
Stability (V
Load VSWR = 6:1, All Phase Angles) (1)
Quiescent Current (With No RF Applied)
(VS2 = VS3 = 12.5 Vdc, V Leakage Current (Pin = 0 mW, VS2 = VS3 = 12.5 Vdc, Vb = 0 Vdc) I Bias Pin Current (P Noise Power (In 30 kHz Bandwidth, 20 MHz above fo)
(P
= 0.03 to 14 W, VS2 = VS3 = 10.8 to 15.6 Vdc; V
out
(1) Adjust Pin for specified P
= 10.8 to 16 Vdc; P
supply
out
= 14 W) (1) I
supply
bias
out
.
= 15.6 Vdc, P
= 0.03 to 14 W;
out
= 4.8 Vdc)
out
= VS3 = 12.5 V, V
S2
= 15 W;
= 4.8 Vdc) (1)
bias
= 4.8 V, TC = 25°C, 50 system, unless otherwise noted)
bias
MHW913 BLOCK DIAGRAM
No degradation in
All spurious outputs more than
I
sq
L
bias
–70
output power
60 dB below desired signal
500 — 0.6 mA — 0.8 mA
dBm
OUTPUT
POWER
METER
SPECTRUM
ANALYZER
mA
INPUT
POWER
METER
DIRECTIONAL COUPLER
10 dB
MINIMUM
ATTENUATION
REFLECTED
POWER
METER
20 dB DUAL
RF SIGNAL
GENERATOR
1
Z
RF IN
2345
TEST FIXTURE
C4
C1
1
V
bias
4.8 V
C7
C1, C2, C3 0.018 µF C4, C5, C6 0.1 µF C7, C8, C9 1.0 µF Z1, Z2 50 Microstrip
C5 C6
C8 C3
V
S2
12.5 V
C2
V
S3
12.5 V
C9
Z
2
RF OUT
DIRECTIONAL COUPLER
Figure 1. MHW913 T est Circuit Diagram
20 dB DUAL
POWER
TERMINA TION
MHW913 2
MOTOROLA RF DEVICE DATA
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