Motorola MHW803-2 Datasheet
1
MHW803–2MOTOROLA RF DEVICE DATA
The RF Line
Capable of wide power range control as encountered in portable cellular radio
applications (30 dB typical).
• MHW803–2 806–870 MHz
• Specified 7.5 Volt Characteristics
RF Input Power = 1 mW (0 dBm)
RF Output Power = 2 Watts
Minimum Gain (V
Control
= 4 V) = 33 dB
Harmonics = –45 dBc Max @ 2 f
o
• 50 Ω Input/Output Impedance
• Guaranteed Stability and Ruggedness
• Epoxy Glass PCB Construction Gives Consistent Performance and Reliability
• Circuit board photomaster available upon request by contacting RF Tactical
Marketing in Phoenix, AZ.
MAXIMUM RATINGS
(Flange Temperature = 25°C)
Rating Symbol Value Unit
DC Supply Voltage (Pins 2,3,4) V
s1,2,3
10 Vdc
DC Control Voltage (Pin 1) V
Cont
4 Vdc
RF Input Power P
in
3 mW
RF Output Power (Vs1 = Vs2 = Vs3 = 10 V) P
out
3 W
Operating Case Temperature Range T
C
–30 to +100 °C
Storage Temperature Range T
stg
–30 to +100 °C
ELECTRICAL CHARACTERISTICS V
s1
= Vs2 = Vs3 = 7.5 Vdc, (Pins 2,3,4), TC = 25°C, 50 W System
Characteristic Symbol Min Max Unit
Frequency Range — 806 870 MHz
Control Voltage (P
out
= 2 W, Pin = 1 mW) (1) V
Cont
0 4 Vdc
Quiescent Current (Vs1, Pin 2 = 7.5 Vdc) (2) I
s1(q)
— 65 mA
Power Gain (P
out
= 2 W, V
Cont
= 4 Vdc) G
p
33 — dB
Efficiency (P
out
= 2 W, Pin = 1 mW) (1)
h
37 — %
Harmonics(P
out
= 2 W) (1) 2 f
o
(Pin = 1 mW) 3 f
o
— — –45
–55
dBc
Input VSWR (P
out
= 2 W, Pin = 1 mW), 50 W Ref. (1)
— — 2.0:1 —
Noise power 30 kHz Bandwidth, 45 MHz above fo
(P
out
= 2 W (1) TC = +25°C
(Pin = 1 mW) TC = +100°C
—
—
—
—
–85
–82
dBm
dBm
Load Mismatch (Vs1 = Vs2 = Vs3 = 10 Vdc)
VSWR = 10:1, P
out
= 3 W, Pin = 3 mW (1)
No Degradation
in Power Output
Stability (Pin = 0.5–2 mW, Vs1 = Vs2 = Vs3 = 6–9 Vdc)
P
out
between 0 mW and 2 W (1)
Load VSWR = 6:1, Source VSWR = 3:1)
All spurious outputs
more than 60 dB
below desired signal
NOTES:
1. Adjust V
cont
for specified P
out
.
2. V
Cont
= 0 Vdc.
Order this document
by MHW803/D
SEMICONDUCTOR TECHNICAL DATA
2 W, 806 to 905 MHz
UHF POWER
AMPLIFIERS
CASE 301E–04, STYLE 1
Motorola, Inc. 1997
REV 7
MHW803–2
2
MOTOROLA RF DEVICE DATA
Z1, Z2 — 50 W MICROSTRIP
L1, L2, L3, L4 — 0.15 mH
C3, C5, C7 — 0.1 mF
C1, C2 — 0.018 mF CHIP
C4, C6, C8, C9 — 1 mF Tantalum
SIGNAL
GENERATOR
10 dB
ATTENUATOR
C8
21
PIN
NO.
C6
R.F.
OUT
50
OHM
LOAD
Z2
C5
C7
L4L3
543
C3
R.F.
IN
C4C9
TEST FIXTURE
C2
L2L1
Z1
C1
V
CONTROL
+ 4 Vdc
@ 100 mA
(TYPICAL)
V
s1
+ 7.5 Vdc
@120 mA
(TYPICAL)
V
s2
+ 7.5 Vdc
@100 mA
(TYPICAL)
V
s3
+ 7.5 Vdc
@450 mA
(TYPICAL)
Figure 1. Power Module Test System
Block Diagram
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