Datasheet MHPM7A15A60A Datasheet (Motorola)

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SEMICONDUCTOR TECHNICAL DATA

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Integrated Power Stage for 1.0 hp Motor Drives

The MHPM7A15A60A module integrates a 3-phase input rectifier bridge,
3-phase output inverter, brake transistor/diode, current sense resistor and
temperature sensor in a single convenient package.The output inverter utilizes
advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling
diodes to give optimal dynamic performance. It has been configured for use as
a three-phase motor drive module or for many other power switching
applications. The top connector pins have been designed for easy interfacing to
the user’s control board.

• DC Bus Current Sense Resistor Included

• Short Circuit Rated 10 µs @ 25°C

• Temperature Sensor Included

• Pin-to-Baseplate Isolation exceeds 2500 V ac (rms)

• Convenient Package Outline

• UL

• Access to Positive and Negative DC Bus

MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)

INPUT RECTIFIER BRIDGE

Repetitive Peak Reverse Voltage V
Average Output Rectified Current I
Peak Non-repetitive Surge Current — (1/2 Cycle) (1) I

OUTPUT INVERTER

IGBT Reverse Voltage V
Gate-Emitter Voltage V
Continuous IGBT Collector Current I
Peak IGBT Collector Current — (PW = 1.0 ms) (2) I
Continuous Free-Wheeling Diode Current I
Peak Free-Wheeling Diode Current — (PW = 1.0 ms) (2) I
IGBT Power Dissipation P
Free-Wheeling Diode Power Dissipation P
IGBT Junction Temperature Range T
Free-Wheeling Diode Junction Temperature Range T

(1) 1 cycle = 50 or 60 Hz
(2) 1.0 ms = 1.0% duty cycle

Preferred devices are Motorola recommended choices for future use and best overall value.

Recognized and Designed to Meet VDE

Rating Symbol Value Unit

RRM

O

FSM

CES

GES

C

C(pk)

F

F(pk)

D
D

J
J

Motorola Preferred Device

15 AMP, 600 VOLT

HYBRID POWER MODULE

PLASTIC PACKAGE

CASE 440-01, Style 1

600 V

15 A

200 A

600 V

± 20 V

15 A
30 A
15 A
30 A
55 W

30 W
– 40 to +125 °C
– 40 to +125 °C

 Motorola, Inc. 1995

MOTOROLA

MHPM7A15A60A

1

MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

BRAKE CIRCUIT

IGBT Reverse Voltage V
Gate-Emitter Voltage V
Continuous IGBT Collector Current I
Peak IGBT Collector Current (PW = 1.0 ms) (2) I
IGBT Power Dissipation PD 55 W
Diode Reverse Voltage V
Continuous Output Diode Current I
Peak Output Diode Current (PW = 1.0 ms) (2) I

TOTAL MODULE

Isolation Voltage — (47–63 Hz, 1.0 Minute Duration) V
Ambient Operating Temperature Range T
Operating Case Temperature Range T
Storage Temperature Range T
Mounting Torque — 6.0 lb–in

CES

GES

C

C(pk)

RRM

F

F(pk)

ISO

A
C

stg

600 V

± 20 V

15 A

30 A

600 V

15 A

30 A

2500 VAC
– 40 to + 85 °C
– 40 to + 90 °C

– 40 to +150 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

INPUT RECTIFIER BRIDGE

Reverse Leakage Current (V
Forward Voltage (IF = 15 A) V
Thermal Resistance (Each Die) R

OUTPUT INVERTER

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) I
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V)

Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 15 A) V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies — 950 — pF
Input Gate Charge (VCE = 300 V, IC = 15 A, VGE = 15 V) Q
Fall Time — Inductive Load

(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)

Turn-On Energy

(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)

Turn-Off Energy

(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
Diode Forward Voltage (IF = 15 A, VGE = 0 V) V
Diode Reverse Recovery Time

(IF = 15 A, V = 400 V, dI/dt = 50 A/µs)
Diode Stored Charge (IF = 15 A, V = 400 V, di/dt = 50 A/µs) Q
Thermal Resistance — IGBT (Each Die) R
Thermal Resistance — Free-Wheeling Diode (Each Die) R

(2) 1.0 ms = 1.0% duty cycle

= 600 V) I

RRM

TJ = 25°C
TJ = 125°C

R

F

θJC

GES

I

CES

GE(th)

(BR)CES

CE(SAT)

T

t

fi

E

(on)

E

(off)

F

t

rr

rr

θJC
θJC

— 10 50 µA
— 1.05 1.5 V
— — 2.9 °C/W

— — ± 20 µA

—
—

4.0 6.0 8.0 V

600 700 — V

— 2.7 3.5 V

— 75 — nC

— 200 350 ns
— — 1.0 mJ

— — 1.0 mJ

— 1.5 2.0 V

— 140 200 ns
— — 900 nC
— — 1.9 °C/W
— — 3.7 °C/W

—
—

200

2.0

µA

mA

MHPM7A15A60A

2

MOTOROLA

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

BRAKE CIRCUIT

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) I
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) (1)

Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 15 A) (1) V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies — 950 — pF
Input Gate Charge (VCE = 300 V, IC = 15 A, VGE = 15 V) Q
Fall Time — Inductive Load

(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
Turn-On Energy

(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
Turn-Off Energy

(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
Diode Forward Voltage (IF = 15 A) V
Diode Reverse Leakage Current I
Thermal Resistance — IGBT R
Thermal Resistance — Diode R

SENSE RESISTOR

Resistance R
Resistance Tolerance R

TEMPERATURE SENSE DIODE

Forward Voltage (@ IF = 1.0 mA) V
Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) TC

(1) 1 cycle = 50 or 60 Hz.

(continued) (T

TJ = 25°C
TJ = 125°C

= 25°C unless otherwise noted)

J

GES

I

CES

GE(th)

(BR)CES

CE(SAT)

T

t

fi

E

(on)

E

(off)

F

R

θJC
θJC

sense

tol

F
VF

— — ± 20 µA

—
—

4.0 6.0 8.0 V

600 700 — V

— 2.7 3.5 V

— 75 — nC

— 200 350 ns

— — 1.0 mJ

— — 1.0 mJ
— 1.5 2.0 V
— — 50 µA
— — 1.9 °C/W
— — 3.7 °C/W

— 10 — mΩ

–1.0 — +1.0 %

— 0.660 — V
— –1.95 — mV/°C

—
—

200

2.0

µA

mA

MOTOROLA

MHPM7A15A60A

3

20
U

19
V

18
W

Output

3–Phase

IGBT/Diode

Sense

Bridge,

with Current

and T emperature

Q1 Q3 Q5

D5D1

13

D3

11

9

G5

G3

G1

E5

E3

E1

12

10

8

D6D2

DEVICE INTEGRATION

G6

D4

Q8

TEMP SENSE

C

G4

Q2 Q4 Q6

G2

16 17 14

B

21

–I +IN2N1

+T

3

45625

Brake

3–Phase

C

–T

2

IGBT/

Input

Rectifier

Diode

Bridge

17

P1 P2

Q7

G7

15

S

23

T
22

R

24

Figure 1. Integrated Power Stage Schematic

= PIN NUMBER IDENTIFICATION

MHPM7A15A60A

4

MOTOROLA

V

GE

90%

, FORWARD CURRENT (A)

F

I

50

40

30

20

10

I

C

R

G

L

V

CE

V

CE

t

d(off)

I

C

90%

10%VCE10%

t

f

t

off

Figure 2. Inductive Switching Time Test Circuit and Timing Chart

T ypical Characteristics

25°C125°C

0

VF, FORWARD VOLTAGE (V)

1.20.4 101.0

1.81.40.6 1.00.2

2.01.60.80

1.0
D = 0.5

0.2

0.1

RESISTANCE (NORMALIZED)

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

SINGLE PULSE

P

(pk)

R

= r(t)(R

θ

JC(t)

R

θ

JC

D Curves apply for power pulse
train shown read time at t
T

J(pk)–TC

t, TIME (ms)

= 3.2°C/W

= P

(pk)

θ

JC)

R

θ

t

1

t

1

JC(t)

2

10001000.10.01

Figure 3. Input Bridge Forward Current versus

Forward Voltage

MOTOROLA

Figure 4. Input Rectifier Bridge Thermal

Response

MHPM7A15A60A

5

T ypical Characteristics

, FORWARD CURRENT (A)

F

I

50

40

30

20

10

0

VF, FORWARD VOLTAGE (V)

125°C25°C

Figure 5. Output Inverter Diode Forward Currrent

versus Forward Voltage

20

16

12

8

4

, COLLECTOR-EMITTER VOL TAGE (V)

CE

V

0

5 A

VGE, GATE-EMITTER VOLTAGE (V)

10 A

20 A

50

40

30

20

, COLLECTOR CURRENT (A)

C

10

I

0

542103

20 V

15 V

4

VCE, COLLECTOR–EMITTER VOL TAGE (V)

12 V

10 V

8 V

7 V

8

1060

Figure 6. Output Inverter Collector-Current

versus Collector-Emitter V oltage

450

TJ = 25°C

400

IC = 15 A

350
300
250
200
150

100

, COLLECTOR-EMITTER VOL TAGE (V)V

CE

50

168

201240

0

QG, GATE CHARGE (nC)

100 V

200 V

300 V

18
16
14
12
10
8

, GATE VOLTAGE (V)V

6

GE

4
2

0

1008060402009070503010

Figure 7. Output Inverter Collector-Emitter

V oltage versus Gate-Emitter Voltage

1000

V

= 300 V

CE

VGE = 15 V
RG = 150

µ

100

10

SWITCHING ENERGY ( J)

1

Figure 9. Inverter Switching Energy E

MHPM7A15A60A

6

Ω

125°C

25°C

IC, COLLECTOR CURRENT (A)

Collector Current I

Figure 8. Gate–to–Emitter V oltage versus

Gate Charge

1000

VCE = 300 V
VGE = 15 V
IC = 15 A

µ

100

25°C

SWITCHING ENERGY ( J)

10

100110

RG, GATE RESISTANCE (Ω)

versus

(off)

C

Figure 10. Inverter Switching Energy E

versus Gate Resistance R

G

100010 100

(off)

MOTOROLA

1000

100

VCE = 300 V
VGE = 15 V
RG = 150

Ω

TJ = 25°C

T ypical Characteristics

1000

VCE = 300 V
VGE = 15 V
RG = 150
TJ = 125°C

100

Ω

SWITCHING TIME (ns)

1000

100

SWITCHING TIME (ns)

10

10

1

IC, COLLECTOR CURRENT (A)

Figure 11. Inverter Switching T ime tf, td, t

versus Collector Current I

VCE = 300 V
VGE = 15 V
IC = 15 A
TJ = 25

°

C

RG, GATE RESISTANCE (Ω)

10

t

f

t

d

t

(off)

(off)

C

t

f

t

d

t

(off)

100010 100

SWITCHING TIME (ns)

100101

1

IC, COLLECTOR CURRENT (A)

Figure 12. Inverter Switching Time tf, td, t

versus Collector Current I

1000

V

= 300 V

CE

VGE = 15 V
RG = 150

Ω

125°C

100

SWITCHING TIME (ns)

10

1

25°C

IC, COLLECTOR CURRENT (A)

C

tf @ 125
td @ 125
t

@ 125

(off)

(off)

100110

100110

1000

100

SWITCHING TIME (ns)

10

Figure 13. Inverter Switching Time

VCE = 300 V
VGE = 15 V
IC = 15 A
TJ = 25

1

tf, td, t

°

C

versus Gate Resistance R

(off)

RG, GATE RESISTANCE (Ω)

Figure 15. Inverter Switching Time tr versus

Gate Resistance R

G

Figure 14. Inverter Switching Time tr versus

G

10000

1000

100

CAPACITANCE (pF)

10

100010010

1

Collector Current I

VCE (V)

Figure 16. Inverter Capacitance versus V

C

C

C

C

100

ies

oes

res

1000101

CE

MOTOROLA

MHPM7A15A60A

7

T ypical Characteristics

1.0
D = 0.5

0.2

0.1

RESISTANCE (NORMALIZED)

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

SINGLE PULSE

P

(pk)

R

= r(t)(R

θ

JC(t)

R

θ

JC

D Curves apply for power pulse
train shown read time at t
T

J(pk)–TC

101.0

t, TIME (ms)

= 2.2

°

C/W

= P

θ

(pk)

JC

R

Figure 17. Ouput Inverter IGBT

Thermal Response

40
35

30
25

)

θ

JC(t)

1.0
D = 0.5

0.2

P

= P

θ

(pk)

JC

(pk)

R

)

θ

t

1

JC(t)

t

2

1

10001000.10.01

0.1

t

1

t

2

RESISTANCE (NORMALIZED)

1

10001000.10.01

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

SINGLE PULSE

R

= r(t)(R

θ

JC(t)

R

= 3.4°C/W

θ

JC

D Curves apply for power pulse
train shown read time at t
T

J(pk)–TC

101.0

t, TIME (ms)

Figure 18. Output Diode Thermal Response

, COLLECTOR CURRENT (A)

C

I

20
15
10

L = 200 µH
VGE = 15 V

5

RG = 150

0

Ω

VCE, COLLECTOR-EMITTER VOL TAGE (V)

Figure 19. Output Inverter Reverse Bias Safe

Operating Area (RBSOA)

8006004002000 700500300100

MHPM7A15A60A

8

MOTOROLA

P ACKAGE DIMENSIONS

E

AB

AE AA

AFAC

AD

3 PL

A

AH

2 PL

W

2 PL

N

1

G

L

M

Y

4 PL

25 18

AG

P
U

H

7 PL

J

25 PL

D

F

DETAIL Z

STYLE 1:

PIN 1. P1 PIN 6. N2 PIN 11. G3 PIN 16. G2 PIN 21. B

2. T– 7. P2 12. K5 17. G4 22. T

3. T+ 8. K1 13. G5 18. W 23. S

4. I+ 9. G1 14. G6 19. V 24. R

5. I– 10. K3 15. G7 20. U 25. N1

V

9 PL

C

K

DETAIL Z

Q

2 PL

17

T

B

S

R

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

X

4 PL

3. LEAD LOCATION DIMENSIONS (ie: M, B. AA...)
ARE TO THE CENTER OF THE LEAD.

DIM MIN MAX MIN MAX

A 97.54 98.55 3.840 3.880
B 52.45 53.47 2.065 2.105
C 14.60 15.88 0.575 0.625
D 0.43 0.84 0.017 0.033
E 10.80 12.06 0.425 0.475
F 0.94 1.35 0.037 0.053

G 1.60 2.21 0.063 0.087

H 8.58 9.19 0.338 0.362
J 0.30 0.71 0.012 0.028
K 18.80 20.57 0.74 0.81
L 19.30 20.32 0.760 0.800

M 38.99 40.26 1.535 1.585

N 9.78 11.05 0.385 0.435
P 82.55 83.57 3.250 3.290

Q 4.01 4.62 0.158 0.182

R 26.42 27.43 1.040 1.080
S 12.06 12.95 0.475 0.515
T 4.32 5.33 0.170 0.210
U 86.36 87.38 3.400 3.440
V 14.22 15.24 0.560 0.600

W 7.62 8.13 0.300 0.320

X 6.55 7.16 0.258 0.282

Y 2.49 3.10 0.098 0.122
AA 2.24 2.84 0.088 0.112
AB 7.32 7.92 0.288 0.312
AC 4.78 5.38 0.188 0.212
AD 8.58 9.19 0.338 0.362
AE 6.05 6.65 0.238 0.262
AF 4.78 5.38 0.188 0.212
AG 69.34 70.36 2.730 2.770
AH ––– 5.08 ––– 0.200

INCHESMILLIMETERS

MOTOROLA

CASE 440-01

ISSUE O

MHPM7A15A60A

9

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
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unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MHPM7A15A60A

10

2PHX34106L–0 PRINTED IN USA 3/95 IMPERIAL LITHO 12250 4,500 HYBRID POWER MODULE

◊

*MHPM7A15A60A/D*

MHPM7A15A60A/D

MOTOROLA