Motorola MHPM7A15A60A Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MHPM7A15A60A/D
Integrated Power Stage for 1.0 hp Motor Drives
The MHPM7A15A60A module integrates a 3-phase input rectifier bridge,
3-phase output inverter, brake transistor/diode, current sense resistor and
temperature sensor in a single convenient package.The output inverter utilizes
advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling
diodes to give optimal dynamic performance. It has been configured for use as
a three-phase motor drive module or for many other power switching
applications. The top connector pins have been designed for easy interfacing to
the user’s control board.
• DC Bus Current Sense Resistor Included
• Short Circuit Rated 10 µs @ 25°C
• Temperature Sensor Included
• Pin-to-Baseplate Isolation exceeds 2500 V ac (rms)
• Convenient Package Outline
• UL
• Access to Positive and Negative DC Bus
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
INPUT RECTIFIER BRIDGE
Repetitive Peak Reverse Voltage V
Average Output Rectified Current I
Peak Non-repetitive Surge Current — (1/2 Cycle) (1) I
OUTPUT INVERTER
IGBT Reverse Voltage V
Gate-Emitter Voltage V
Continuous IGBT Collector Current I
Peak IGBT Collector Current — (PW = 1.0 ms) (2) I
Continuous Free-Wheeling Diode Current I
Peak Free-Wheeling Diode Current — (PW = 1.0 ms) (2) I
IGBT Power Dissipation P
Free-Wheeling Diode Power Dissipation P
IGBT Junction Temperature Range T
Free-Wheeling Diode Junction Temperature Range T
(1) 1 cycle = 50 or 60 Hz
(2) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
Recognized and Designed to Meet VDE
Rating Symbol Value Unit
RRM
O
FSM
CES
GES
C
C(pk)
F
F(pk)
D
D
J
J
Motorola Preferred Device
15 AMP, 600 VOLT
HYBRID POWER MODULE
PLASTIC PACKAGE
CASE 440-01, Style 1
600 V
15 A
200 A
600 V
± 20 V
15 A
30 A
15 A
30 A
55 W
30 W
– 40 to +125 °C
– 40 to +125 °C
Motorola, Inc. 1995
MOTOROLA
MHPM7A15A60A
1
MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
BRAKE CIRCUIT
IGBT Reverse Voltage V
Gate-Emitter Voltage V
Continuous IGBT Collector Current I
Peak IGBT Collector Current (PW = 1.0 ms) (2) I
IGBT Power Dissipation PD 55 W
Diode Reverse Voltage V
Continuous Output Diode Current I
Peak Output Diode Current (PW = 1.0 ms) (2) I
TOTAL MODULE
Isolation Voltage — (47–63 Hz, 1.0 Minute Duration) V
Ambient Operating Temperature Range T
Operating Case Temperature Range T
Storage Temperature Range T
Mounting Torque — 6.0 lb–in
CES
GES
C
C(pk)
RRM
F
F(pk)
ISO
A
C
stg
600 V
± 20 V
15 A
30 A
600 V
15 A
30 A
2500 VAC
– 40 to + 85 °C
– 40 to + 90 °C
– 40 to +150 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
INPUT RECTIFIER BRIDGE
Reverse Leakage Current (V
Forward Voltage (IF = 15 A) V
Thermal Resistance (Each Die) R
OUTPUT INVERTER
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) I
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 15 A) V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies — 950 — pF
Input Gate Charge (VCE = 300 V, IC = 15 A, VGE = 15 V) Q
Fall Time — Inductive Load
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
Turn-On Energy
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
Turn-Off Energy
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
Diode Forward Voltage (IF = 15 A, VGE = 0 V) V
Diode Reverse Recovery Time
(IF = 15 A, V = 400 V, dI/dt = 50 A/µs)
Diode Stored Charge (IF = 15 A, V = 400 V, di/dt = 50 A/µs) Q
Thermal Resistance — IGBT (Each Die) R
Thermal Resistance — Free-Wheeling Diode (Each Die) R
(2) 1.0 ms = 1.0% duty cycle
= 600 V) I
RRM
TJ = 25°C
TJ = 125°C
R
F
θJC
GES
I
CES
GE(th)
(BR)CES
CE(SAT)
T
t
fi
E
(on)
E
(off)
F
t
rr
rr
θJC
θJC
— 10 50 µA
— 1.05 1.5 V
— — 2.9 °C/W
— — ± 20 µA
—
—
4.0 6.0 8.0 V
600 700 — V
— 2.7 3.5 V
— 75 — nC
— 200 350 ns
— — 1.0 mJ
— — 1.0 mJ
— 1.5 2.0 V
— 140 200 ns
— — 900 nC
— — 1.9 °C/W
— — 3.7 °C/W
—
—
200
2.0
µA
mA
MHPM7A15A60A
2
MOTOROLA
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
BRAKE CIRCUIT
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) I
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) (1)
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0) V
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 15 A) (1) V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) Cies — 950 — pF
Input Gate Charge (VCE = 300 V, IC = 15 A, VGE = 15 V) Q
Fall Time — Inductive Load
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
Turn-On Energy
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
Turn-Off Energy
(VCE = 300 V, IC = 15 A, VGE = 15 V, RG = 150 Ω)
Diode Forward Voltage (IF = 15 A) V
Diode Reverse Leakage Current I
Thermal Resistance — IGBT R
Thermal Resistance — Diode R
SENSE RESISTOR
Resistance R
Resistance Tolerance R
TEMPERATURE SENSE DIODE
Forward Voltage (@ IF = 1.0 mA) V
Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) TC
(1) 1 cycle = 50 or 60 Hz.
(continued) (T
TJ = 25°C
TJ = 125°C
= 25°C unless otherwise noted)
J
GES
I
CES
GE(th)
(BR)CES
CE(SAT)
T
t
fi
E
(on)
E
(off)
F
R
θJC
θJC
sense
tol
F
VF
— — ± 20 µA
—
—
4.0 6.0 8.0 V
600 700 — V
— 2.7 3.5 V
— 75 — nC
— 200 350 ns
— — 1.0 mJ
— — 1.0 mJ
— 1.5 2.0 V
— — 50 µA
— — 1.9 °C/W
— — 3.7 °C/W
— 10 — mΩ
–1.0 — +1.0 %
— 0.660 — V
— –1.95 — mV/°C
—
—
200
2.0
µA
mA
MOTOROLA
MHPM7A15A60A
3
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