Datasheet MHPM7A10E60DC3 Datasheet (Motorola)

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SEMICONDUCTOR TECHNICAL DATA
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Integrated Power Stage for 230 VAC Motor Drive
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by MHPM7A10E60DC3/D
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Motorola Preferred Device
This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is designed for 1.0 hp general purpose 3–phase induction motor drive
10 AMP, 600 VOLT
HYBRID POWER MODULE
Short Circuit Rated 10 µs @ 125°C, 400 V
Pin-to-Baseplate Isolation Exceeds 2500 V ac (rms)
Compact Package Outline
Access to Positive and Negative DC Bus
Independent Brake Circuit Connections
UL Recognition Pending
ORDERING INFORMATION
Voltage
Device
PHPM7A10E60DC3 600 10 1.0
MAXIMUM DEVICE RATINGS (T
Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C) V IGBT Reverse Voltage V Gate-Emitter Voltage V Continuous IGBT Collector Current (TC = 80°C) I Repetitive Peak IGBT Collector Current Continuous Free–Wheeling Diode Current (TC = 25°C) I Continuous Free–Wheeling Diode Current (TC = 80°C) I Repetitive Peak Free–Wheeling Diode Current Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C) I IGBT Power Dissipation per die (TC = 95°C) P Free–Wheeling Diode Power Dissipation per die (TC = 95°C) P Junction Temperature Range T Short Circuit Duration (VCE = 400 V, TJ = 125°C) t Isolation Voltage, pin to baseplate V Operating Case Temperature Range T Storage Temperature Range T Mounting Torque — Heat Sink Mounting Holes 12 lb–in
(1) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Rating
= 25°C unless otherwise noted)
J
Rating Symbol Value Unit
(1)
(1)
Current
Rating
Equivalent
Horsepower
RRM
CES
GES
Cmax
I
C(pk) Fmax
F80
I
F(pk)
Omax
D D
J
sc
ISO
C
stg
CASE 464D–01
ISSUE O
900 V 600 V ±20 V
10 A 20 A 10 A
6.0 A 20 A 20 A 17 W
9.1 W
–40 to +150 °C
10
2500 Vac
–40 to +95 °C
–40 to +150 °C
m
s
Motorola IGBT Device Data
Motorola, Inc. 1998
1
MHPM7A10E60DC3
ELECTRICAL CHARACTERISTICS
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (IF = 10 A) V Gate–Emitter Leakage Current (VCE = 0 V, VGE = ±20 V) I Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V) I Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V Collector–Emitter Saturation Voltage (IC = I Free–Wheeling Diode Forward Voltage (IF = I Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz) C Input Gate Charge (VCE = 300 V, IC = I
THERMAL CHARACTERISTICS, EACH DIE
Thermal Resistance — IGBT Thermal Resistance — Free–Wheeling (Fast Soft) Diode Thermal Resistance — Input Rectifier
TEMPERATURE SENSE DIODE
Forward Voltage (@ IF = 1.0 mA) V Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) TC
(T
= 25°C unless otherwise noted)
J
Characteristic
Cmax
Cmax
Symbol Min Typ Max Unit
(BR)CES
, VGE = 15 V) V
, VGE = 0 V) V
Fmax
, VGE = 15 V) Q
F GES CES
GE(th)
CE(sat)
F
ies
T
R
q
JC
R
q
JC
R
q
JC
F
VF
0.92 1.1 V — ±20 — 5.0 100
4.0 6.0 8.0 V
600 V
2.0 2.4 V
1.7 2.0 2.3 V — 1020 pF — 57 nC
2.6 3.2 °C/W — 4.8 6.0 °C/W — 3.4 4.2 °C/W
1.983 2.024 2.066 V — –8.64 mV/°C
m
A
m
A
2
Motorola IGBT Device Data
TYPICAL CHARACTERISTICS
MHPM7A10E60DC3
20
15
10
5.0
, FORWARD CURRENT (AMPS)
F
I
20
15
20
TJ = 125°C
25°C
0
0.2 1.00.8
0.4 0.6
VF, FORWARD VOLTAGE (VOLTS)
1.20
Figure 1. Forward Characteristics —
Input Rectifier
20 V
12.5 V
17.5 V
15 V
VGE = 10 V
18 16 14 12 10
8.0
6.0
, FORWARD CURRENT (AMPS)
4.0
F
I
2.0 0
20
15
TJ = 125°C
0
0.5 1.0 1.5 2.0 VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Characteristics —
Free–Wheeling Diode
20 V
12.5 V
25°C
3.02.5
17.5 V
15 V
VGE = 10 V
10
0.5
, COLLECTOR CURRENT (AMPS)
C
I
0
5.0
4.0
3.0
2.0
1.0 0
–1.0 –2.0 –3.0
, GATE CLAMP DIODE CURRENT (mA)
–4.0
G
I
–5.0
10
0.5
, COLLECTOR CURRENT (AMPS)
C
I
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
3.01.0
TJ = 125°C
4.02.0
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
3.01.0 2.0 4.0 5.0
TJ = 25°C
Figure 3. Forward Characteristics, TJ = 25°C Figure 4. Forward Characteristics, TJ = 125°C
+15 V
MBRS1100T3
W
20
R
G(off)
120 R
G(on)
W
MBRS1100T3
TJ = 25°C
–20 0–30
–10 10 3020
VGE, GATE–T O–EMITTER VOLTAGE (VOLTS)
MC33153
MBRS1100T3
5.00
Figure 5. Gate–Emitter Zener Diode
Clamp Characteristic
Motorola IGBT Device Data
Figure 6. Recommended Gate Drive Circuit
3
MHPM7A10E60DC3
+15 V
TYPICAL CHARACTERISTICS
2.5
2.0
MAXIMUM TYPICAL MINIMUM
Figure 7. Recommended T emperature Sense
MOTOR OUTPUT
U V
W
R1
12.4 k
14
15
21
W
A/D INPUT
Bias Circuit
1.5
1.0 TYPICAL
VF = 2.240 – 0.00864 T
0.5
, FORWARD VOLTAGE @ 1 mA (VOLTS)
F
V
MIN: 2.199 – 0.00864 T MAX: 2.282 – 0.00864 T
0
20 40 60 80
100 120
T, TEMPERATURE (°C)
140
1600
Figure 8. BA V99LT1 Temperature Sense Diode
Performance: VF = 2.59 – 7.31E–3 T
BRAKE RESISTOR
43
65
7 8 9 10 12
11
C
R ST3 PHASE INPUT
D1
D2
R1
SENSE
RESISTOR
Q1
Q2
24
Q3
D3
Q4
D4
23
22
R2 R3
D7
Q5
D5
TEMP
SENSE
D14
Q6
D6
21 20
19
18 17 16 15 14 13
+
C1
Q7
Figure 9. Schematic of Module, Showing Pin–Out and
External Connections
D12D10D8
D13D11D9
FILTER
R NTC
FILTER
4
Motorola IGBT Device Data
0.175
0.175
0.585
0.450
0.250
MHPM7A10E60DC3
KEEP–OUT ZONES (x4)
0.066
1.850
0.925
NOTES:
1. Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non–plated thru–hole in the footprint.
2. Dimension of plated thru–holes indicates finished hole size after plating.
3. Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.
0.270
0.140
NON–PLATED
THRU–HOLE
PLATED THRU–HOLES (x24)
Figure 10. Package Footprint (Dimensions in Inches)
OPTIONAL NON–PLATED THRU–HOLES FOR ACCESS TO HEAT SINK MOUNTING SCREWS (x2)
Motorola IGBT Device Data
5
MHPM7A10E60DC3
P ACKAGE DIMENSIONS
AA
M
4 PL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. LEAD LOCATION DIMENSIONS (ie: P, Q, R, S...) ARE TO THE CENTER OF THE LEAD.
DIM MIN MAX MIN MAX
A 111.51 112.52 4.390 4.430 B 50.93 51.94 2.005 2.045 C 12.32 13.59 0.485 0.535 D 0.89 1.65 E 8.64 9.65 F 0.13 0.64 G 5.97 6.73 H 46.48 47.50 J 0.41 1.22 K 16.26 17.27 L 3.71 4.72 M 5.46 6.48 N 10.92 11.94 P 37.60 38.60 Q 2.01 2.62 R 23.24 23.75 S 14.35 15.37 U 99.10 100.08 V 81.28 82.55
W 42.67 43.69 1.680 1.720
Y 5.15 5.77 0.203 0.227 X 11.30 12.07 0.445 0.475
AA 2.01 2.72 0.079 0.107
F
AB 16.26 17.27 0.640 0.680
0.035 0.065
0.340 0.380
0.005 0.025
0.235 0.265
1.830 1.870
0.016 0.048
0.640 0.680
0.146 0.186
0.215 0.255
0.430 0.470
1.480 1.520
0.079 0.103
0.915 0.935
0.565 0.605
3.900 3.940
3.200 3.240
DETAIL Z
INCHESMILLIMETERS
A
U
Q3 PL
Y2 PL
23
1
NPB
456
789101112
H
R
24
23 22 21 20 19 18 17 16 15 14 13
S
G 22 PL
J
DETAIL Z
D
24 PL
24 PL
AB
X
C
V
K
E
L
W
CASE 464D–01
ISSUE O
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6
Motorola IGBT Device Data
MHPM7A10E60DC3/D
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