Motorola MHPM7A10E60DC3 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Integrated Power Stage
for 230 VAC Motor Drive
Order this document
by MHPM7A10E60DC3/D
Motorola Preferred Device
This module integrates a 3–phase inverter, 3–phase rectifier,
brake, and temperature sense in a single convenient package. It is
designed for 1.0 hp general purpose 3–phase induction motor drive
10 AMP, 600 VOLT
HYBRID POWER MODULE
applications. The inverter incorporates advanced insulated gate
bipolar transistors (IGBT) with integrated ESD protection Gate–
Emitter zener diodes and ultrafast soft (UFS) free–wheeling diodes
to give optimum performance. The solderable top connector pins
are designed for easy interfacing to the user’s control board.
• Short Circuit Rated 10 µs @ 125°C, 400 V
• Pin-to-Baseplate Isolation Exceeds 2500 V ac (rms)
• Compact Package Outline
• Access to Positive and Negative DC Bus
• Independent Brake Circuit Connections
• UL Recognition Pending
ORDERING INFORMATION
Voltage
Device
PHPM7A10E60DC3 600 10 1.0
MAXIMUM DEVICE RATINGS (T
Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C) V
IGBT Reverse Voltage V
Gate-Emitter Voltage V
Continuous IGBT Collector Current (TC = 80°C) I
Repetitive Peak IGBT Collector Current
Continuous Free–Wheeling Diode Current (TC = 25°C) I
Continuous Free–Wheeling Diode Current (TC = 80°C) I
Repetitive Peak Free–Wheeling Diode Current
Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C) I
IGBT Power Dissipation per die (TC = 95°C) P
Free–Wheeling Diode Power Dissipation per die (TC = 95°C) P
Junction Temperature Range T
Short Circuit Duration (VCE = 400 V, TJ = 125°C) t
Isolation Voltage, pin to baseplate V
Operating Case Temperature Range T
Storage Temperature Range T
Mounting Torque — Heat Sink Mounting Holes — 12 lb–in
(1) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Rating
= 25°C unless otherwise noted)
J
Rating Symbol Value Unit
(1)
(1)
Current
Rating
Equivalent
Horsepower
RRM
CES
GES
Cmax
I
C(pk)
Fmax
F80
I
F(pk)
Omax
D
D
J
sc
ISO
C
stg
CASE 464D–01
ISSUE O
900 V
600 V
±20 V
10 A
20 A
10 A
6.0 A
20 A
20 A
17 W
9.1 W
–40 to +150 °C
10
2500 Vac
–40 to +95 °C
–40 to +150 °C
m
s
Motorola IGBT Device Data
Motorola, Inc. 1998
1
MHPM7A10E60DC3
ELECTRICAL CHARACTERISTICS
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (IF = 10 A) V
Gate–Emitter Leakage Current (VCE = 0 V, VGE = ±20 V) I
Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V) I
Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V
Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V
Collector–Emitter Saturation Voltage (IC = I
Free–Wheeling Diode Forward Voltage (IF = I
Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz) C
Input Gate Charge (VCE = 300 V, IC = I
THERMAL CHARACTERISTICS, EACH DIE
Thermal Resistance — IGBT
Thermal Resistance — Free–Wheeling (Fast Soft) Diode
Thermal Resistance — Input Rectifier
TEMPERATURE SENSE DIODE
Forward Voltage (@ IF = 1.0 mA) V
Forward Voltage Temperature Coefficient (@ IF = 1.0 mA) TC
(T
= 25°C unless otherwise noted)
J
Characteristic
Cmax
Cmax
Symbol Min Typ Max Unit
(BR)CES
, VGE = 15 V) V
, VGE = 0 V) V
Fmax
, VGE = 15 V) Q
F
GES
CES
GE(th)
CE(sat)
F
ies
T
R
q
JC
R
q
JC
R
q
JC
F
VF
— 0.92 1.1 V
— — ±20
— 5.0 100
4.0 6.0 8.0 V
600 — — V
— 2.0 2.4 V
1.7 2.0 2.3 V
— 1020 — pF
— 57 — nC
— 2.6 3.2 °C/W
— 4.8 6.0 °C/W
— 3.4 4.2 °C/W
1.983 2.024 2.066 V
— –8.64 — mV/°C
m
A
m
A
2
Motorola IGBT Device Data
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