Motorola MHPM6B10A120D, MHPM6B15A120D, MHPM6B5A120D, PHPM6B20E60D3 Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MHPM6B20E60D3/D
Integrated Power Stage
for 230 VAC Motor Drives
This module integrates a 3–phase inverter and 3–phase rectifier
in a single convenient package. It is designed for 2.0 hp motor drive
applications at frequencies up to 15 kHz. The inverter incorporates
advanced EM–Series insulated gate bipolar transistors (IGBT)
matched with ultrafast soft (UFS) free–wheeling diodes to give
optimum performance. The input bridge uses rugged, efficient
diodes with high surge capability. The top connector pins are
designed for easy interfacing to the user’s control board. It is
pin–compatible with MHPM6B15E60D3 series modules for scalability.
• Short Circuit Rated 10 µs @ 125°C, 400 V
• Pin-to-Baseplate Isolation Exceeds 2500 V ac (rms)
• Compact Package Outline
• Access to Positive and Negative DC Bus
• Gate–Emitter Clamp Diodes for ESD Protection
• UL Recognition Pending
ORDERING INFORMATION
Voltage
Device
PHPM6B20E60D3 600 20 2.0
Rating
Current
Rating
Equivalent
Horsepower
Motorola Preferred Device
20 AMP, 600 VOLT
HYBRID POWER MODULES
CASE 464–03
ISSUE B
MAXIMUM DEVICE RATINGS (T
Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C) V
IGBT Reverse Voltage V
Gate-Emitter Voltage V
Continuous IGBT Collector Current (TC = 25°C) I
Continuous IGBT Collector Current (TC = 80°C) I
Repetitive Peak IGBT Collector Current
Continuous Free–Wheeling Diode Current (TC = 25°C) I
Continuous Free–Wheeling Diode Current (TC = 80°C) I
Repetitive Peak Free–Wheeling Diode Current
Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C) I
Continuous Input Rectifier Current (TC = 25°C) I
Non–Repetitive Peak Input Rectifier Forward Surge Current
(TJ = 95°C prior to start of surge)
IGBT Power Dissipation per die (TC = 95°C) P
Free–Wheeling Diode Power Dissipation per die (TC = 95°C) P
Input Rectifier Power Dissipation per die (TC = 95°C) P
(1) 1.0 ms = 1.0% duty cycle
(2) 1.0 ms = 10% pulse width (tw 10%)
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
= 25°C unless otherwise noted)
J
Rating Symbol Value Unit
900 V
600 V
±20 V
20 A
15 A
40 A
20 A
14 A
40 A
20 A
20 A
475 A
25 W
17 W
13 W
(1)
(1)
(2)
RRM
CES
GES
Cmax
C80
I
C(pk)
Fmax
F80
I
F(pk)
Omax
DC
I
FSM
D
D
D
Motorola IGBT Device Data
Motorola, Inc. 1998
1
MHPM6B20E60D3
MAXIMUM DEVICE RATINGS
Junction Temperature Range T
Short Circuit Duration (VCE = 400 V, TJ = 125°C) t
Isolation Voltage, pin to baseplate V
Operating Case Temperature Range T
Storage Temperature Range T
Mounting Torque — Heat Sink Mounting Holes — 12 lb–in
(TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
J
sc
ISO
C
stg
–40 to +150 °C
10
2500 Vac
–40 to +95 °C
–40 to +150 °C
m
s
ELECTRICAL CHARACTERISTICS (T
Characteristic
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (I = 20 A)
TJ = 125°C
Maximum Instantaneous Reverse Current (V = 900 V)
TJ = 150°C
Gate–Emitter Leakage Current (VCE = 0 V, VGE = ±20 V) I
Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V) I
Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V
Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V
Collector–Emitter Saturation Voltage (IC = I
TJ = 125°C
Free–Wheeling Diode Forward Voltage (IF = I
TJ = 125°C
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) C
THERMAL CHARACTERISTICS (EACH DIE)
Thermal Resistance — IGBT
Thermal Resistance — Free–Wheeling Diode
Thermal Resistance — Input Rectifier
= 25°C unless otherwise noted)
J
, VGE = 15 V)
Cmax
, VGE = 0 V)
Fmax
Symbol Min Typ Max Unit
V
F
I
R
GES
CES
GE(th)
(BR)CES
V
CE(SAT)
V
F
ies
R
q
JC
R
q
JC
R
q
JC
—
—
—
—
— — ±50
— 5.0 100
4.0 6.0 8.0 V
600 — — V
—
—
—
—
— TBD — pF
— 1.8 2.2 °C/W
— 2.6 3.3 °C/W
— 3.4 4.2 °C/W
1.0
0.92
50
3000
2.2
2.5
2.0
1.8
1.25
—
—
—
2.6
—
2.3
—
V
m
A
m
A
m
A
V
V
2
Motorola IGBT Device Data
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