
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MHPM6B20E60D3/D
Integrated Power Stage
for 230 VAC Motor Drives
This module integrates a 3–phase inverter and 3–phase rectifier
in a single convenient package. It is designed for 2.0 hp motor drive
applications at frequencies up to 15 kHz. The inverter incorporates
advanced EM–Series insulated gate bipolar transistors (IGBT)
matched with ultrafast soft (UFS) free–wheeling diodes to give
optimum performance. The input bridge uses rugged, efficient
diodes with high surge capability. The top connector pins are
designed for easy interfacing to the user’s control board. It is
pin–compatible with MHPM6B15E60D3 series modules for scalability.
• Short Circuit Rated 10 µs @ 125°C, 400 V
• Pin-to-Baseplate Isolation Exceeds 2500 V ac (rms)
• Compact Package Outline
• Access to Positive and Negative DC Bus
• Gate–Emitter Clamp Diodes for ESD Protection
• UL Recognition Pending
ORDERING INFORMATION
Voltage
Device
PHPM6B20E60D3 600 20 2.0
Rating
Current
Rating
Equivalent
Horsepower
Motorola Preferred Device
20 AMP, 600 VOLT
HYBRID POWER MODULES
CASE 464–03
ISSUE B
MAXIMUM DEVICE RATINGS (T
Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C) V
IGBT Reverse Voltage V
Gate-Emitter Voltage V
Continuous IGBT Collector Current (TC = 25°C) I
Continuous IGBT Collector Current (TC = 80°C) I
Repetitive Peak IGBT Collector Current
Continuous Free–Wheeling Diode Current (TC = 25°C) I
Continuous Free–Wheeling Diode Current (TC = 80°C) I
Repetitive Peak Free–Wheeling Diode Current
Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C) I
Continuous Input Rectifier Current (TC = 25°C) I
Non–Repetitive Peak Input Rectifier Forward Surge Current
(TJ = 95°C prior to start of surge)
IGBT Power Dissipation per die (TC = 95°C) P
Free–Wheeling Diode Power Dissipation per die (TC = 95°C) P
Input Rectifier Power Dissipation per die (TC = 95°C) P
(1) 1.0 ms = 1.0% duty cycle
(2) 1.0 ms = 10% pulse width (tw 10%)
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
= 25°C unless otherwise noted)
J
Rating Symbol Value Unit
900 V
600 V
±20 V
20 A
15 A
40 A
20 A
14 A
40 A
20 A
20 A
475 A
25 W
17 W
13 W
(1)
(1)
(2)
RRM
CES
GES
Cmax
C80
I
C(pk)
Fmax
F80
I
F(pk)
Omax
DC
I
FSM
D
D
D
Motorola IGBT Device Data
Motorola, Inc. 1998
1

MHPM6B20E60D3
MAXIMUM DEVICE RATINGS
Junction Temperature Range T
Short Circuit Duration (VCE = 400 V, TJ = 125°C) t
Isolation Voltage, pin to baseplate V
Operating Case Temperature Range T
Storage Temperature Range T
Mounting Torque — Heat Sink Mounting Holes — 12 lb–in
(TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
J
sc
ISO
C
stg
–40 to +150 °C
10
2500 Vac
–40 to +95 °C
–40 to +150 °C
m
s
ELECTRICAL CHARACTERISTICS (T
Characteristic
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (I = 20 A)
TJ = 125°C
Maximum Instantaneous Reverse Current (V = 900 V)
TJ = 150°C
Gate–Emitter Leakage Current (VCE = 0 V, VGE = ±20 V) I
Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V) I
Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V
Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V
Collector–Emitter Saturation Voltage (IC = I
TJ = 125°C
Free–Wheeling Diode Forward Voltage (IF = I
TJ = 125°C
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) C
THERMAL CHARACTERISTICS (EACH DIE)
Thermal Resistance — IGBT
Thermal Resistance — Free–Wheeling Diode
Thermal Resistance — Input Rectifier
= 25°C unless otherwise noted)
J
, VGE = 15 V)
Cmax
, VGE = 0 V)
Fmax
Symbol Min Typ Max Unit
V
F
I
R
GES
CES
GE(th)
(BR)CES
V
CE(SAT)
V
F
ies
R
q
JC
R
q
JC
R
q
JC
—
—
—
—
— — ±50
— 5.0 100
4.0 6.0 8.0 V
600 — — V
—
—
—
—
— TBD — pF
— 1.8 2.2 °C/W
— 2.6 3.3 °C/W
— 3.4 4.2 °C/W
1.0
0.92
50
3000
2.2
2.5
2.0
1.8
1.25
—
—
—
2.6
—
2.3
—
V
m
A
m
A
m
A
V
V
2
Motorola IGBT Device Data

MHPM6B20E60D3
Q5
Q6
U
V
W
MOTOR
OUTPUT
C1
+
R1
NTC
123 45 67 8
D11D7
D12D8D9D10
16 15 14 13 12 11 10 9
D1
D2
Q1
Q2
D3
D4
Q3
Q4
D5
D6
THREE
PHASE
INPUT
SENSE RESISTOR
Figure 1. Schematic of Module, Showing Pin–Out and External Connections
Motorola IGBT Device Data
3

MHPM6B20E60D3
0.625
0.175
RECOMMENDED PCB LAYOUT
VIEW OF BOARD FROM HEAT SINK
(All Dimensions Typical)
NON–PLA TED THRU–HOLE
0.140
0.265
0.270
PIN 1
KEEP–OUT ZONES (x4)
0.270
0.250
PLATED THRU–HOLES
(x16)
PACKAGE “SHADOW”
0.625
0.065
1.350
1.530
0.250
0.450
0.1750.175
3.500
OPTIONAL NON–PLATED
THRU–HOLES FOR ACCESS
TO HEA T SINK MOUNTING
SCREWS (x2)
Figure 2. Package Footprint
NOTE:
1. Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non–plated thru–hole in the footprint.
2. Dimension of plated thru–holes indicates net size after plating.
3. Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.
4
Motorola IGBT Device Data

AB
AA
MHPM6B20E60D3
P ACKAGE DIMENSIONS
A
U
Q3 PL
Y2 PL
12
NPB
16 1531441351261171089
SG14 PL
D 16 PL
C
X
V
H
R
DETAIL Z
16 PL
M4 PL
DETAIL Z
K
E
W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. LEAD LOCATION DIMENSIONS (ie: G, S, R, H ...)
J
ARE TO THE CENTER OF THE LEAD.
DIM MIN MAX MIN MAX
A 88.39 89.41 3.480 3.520
F
B 38.35 39.37 1.510 1.550
C 12.32 13.59 0.485 0.535
D 0.89 1.65 0.035 0.065
E 8.64 9.65 0.340 0.380
F 0.13 0.64 0.005 0.025
G 5.97 6.73 0.235 0.265
H 33.91 34.67 1.335 1.365
J 0.41 1.22 0.016 0.048
K 16.26 17.27 0.640 0.680
L 3.71 4.72 0.146 0.186
M 5.46 6.48 0.215 0.255
N 10.92 11.94 0.430 0.470
P 24.89 25.91 0.980 1.020
Q 2.01 2.62 0.079 0.103
R 16.76 17.53 0.660 0.690
S 15.49 16.26 0.610 0.640
U 75.69 76.71 2.980 3.020
L
V 55.88 57.15 2.200 2.250
W 29.97 30.99 1.180 1.220
Y 5.26 5.77 0.207 0.227
X 11.30 12.07 0.445 0.475
AA 2.29 2.79 0.090 0.110
AB 16.26 17.27 0.640 0.680
INCHESMILLIMETERS
CASE 464–03
ISSUE B
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Opportunity/Affirmative Action Employer.
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Motorola IGBT Device Data
◊
MHPM6B20E60D3/D
5