Datasheet MHPM6B10A120D, MHPM6B15A120D, MHPM6B5A120D, PHPM6B20E60D3 Datasheet (Motorola)

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SEMICONDUCTOR TECHNICAL DATA
 
Order this document
by MHPM6B20E60D3/D
  
Integrated Power Stage for 230 VAC Motor Drives
This module integrates a 3–phase inverter and 3–phase rectifier in a single convenient package. It is designed for 2.0 hp motor drive applications at frequencies up to 15 kHz. The inverter incorporates advanced EM–Series insulated gate bipolar transistors (IGBT) matched with ultrafast soft (UFS) free–wheeling diodes to give optimum performance. The input bridge uses rugged, efficient diodes with high surge capability. The top connector pins are designed for easy interfacing to the user’s control board. It is pin–compatible with MHPM6B15E60D3 series modules for scal­ability.
Short Circuit Rated 10 µs @ 125°C, 400 V
Pin-to-Baseplate Isolation Exceeds 2500 V ac (rms)
Compact Package Outline
Access to Positive and Negative DC Bus
Gate–Emitter Clamp Diodes for ESD Protection
UL Recognition Pending
ORDERING INFORMATION
Voltage
Device
PHPM6B20E60D3 600 20 2.0
Rating
Current
Rating
Equivalent
Horsepower

Motorola Preferred Device
20 AMP, 600 VOLT
HYBRID POWER MODULES
CASE 464–03
ISSUE B
MAXIMUM DEVICE RATINGS (T
Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C) V IGBT Reverse Voltage V Gate-Emitter Voltage V Continuous IGBT Collector Current (TC = 25°C) I Continuous IGBT Collector Current (TC = 80°C) I Repetitive Peak IGBT Collector Current Continuous Free–Wheeling Diode Current (TC = 25°C) I Continuous Free–Wheeling Diode Current (TC = 80°C) I Repetitive Peak Free–Wheeling Diode Current Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C) I Continuous Input Rectifier Current (TC = 25°C) I Non–Repetitive Peak Input Rectifier Forward Surge Current
(TJ = 95°C prior to start of surge) IGBT Power Dissipation per die (TC = 95°C) P Free–Wheeling Diode Power Dissipation per die (TC = 95°C) P Input Rectifier Power Dissipation per die (TC = 95°C) P
(1) 1.0 ms = 1.0% duty cycle (2) 1.0 ms = 10% pulse width (tw 10%)
Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
= 25°C unless otherwise noted)
J
Rating Symbol Value Unit
900 V 600 V ±20 V
20 A 15 A 40 A 20 A 14 A 40 A 20 A 20 A
475 A
25 W 17 W 13 W
(1)
(1)
(2)
RRM
CES
GES
Cmax
C80
I
C(pk) Fmax
F80
I
F(pk)
Omax
DC
I
FSM
D D D
Motorola IGBT Device Data
Motorola, Inc. 1998
1
MHPM6B20E60D3
MAXIMUM DEVICE RATINGS
Junction Temperature Range T Short Circuit Duration (VCE = 400 V, TJ = 125°C) t Isolation Voltage, pin to baseplate V Operating Case Temperature Range T Storage Temperature Range T Mounting Torque — Heat Sink Mounting Holes 12 lb–in
(TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
J
sc
ISO
C
stg
–40 to +150 °C
10
2500 Vac
–40 to +95 °C
–40 to +150 °C
m
s
ELECTRICAL CHARACTERISTICS (T
Characteristic
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (I = 20 A)
TJ = 125°C
Maximum Instantaneous Reverse Current (V = 900 V)
TJ = 150°C Gate–Emitter Leakage Current (VCE = 0 V, VGE = ±20 V) I Collector–Emitter Leakage Current (VCE = 600 V, VGE = 0 V) I Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) V Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) V Collector–Emitter Saturation Voltage (IC = I
TJ = 125°C Free–Wheeling Diode Forward Voltage (IF = I
TJ = 125°C Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz) C
THERMAL CHARACTERISTICS (EACH DIE)
Thermal Resistance — IGBT Thermal Resistance — Free–Wheeling Diode Thermal Resistance — Input Rectifier
= 25°C unless otherwise noted)
J
, VGE = 15 V)
Cmax
, VGE = 0 V)
Fmax
Symbol Min Typ Max Unit
V
F
I
R
GES CES
GE(th)
(BR)CES
V
CE(SAT)
V
F
ies
R
q
JC
R
q
JC
R
q
JC
— —
— —
±50 — 5.0 100
4.0 6.0 8.0 V
600 V
— —
— —
TBD pF
1.8 2.2 °C/W — 2.6 3.3 °C/W — 3.4 4.2 °C/W
1.0
0.92 50
3000
2.2
2.5
2.0
1.8
1.25 —
— —
2.6 —
2.3 —
V
m
A
m
A
m
A
V
V
2
Motorola IGBT Device Data
MHPM6B20E60D3
Q5
Q6
U V W
MOTOR OUTPUT
C1
+
R1 NTC
123 45 67 8
D11D7
D12D8D9D10
16 15 14 13 12 11 10 9
D1
D2
Q1
Q2
D3
D4
Q3
Q4
D5
D6
THREE PHASE
INPUT
SENSE RESISTOR
Figure 1. Schematic of Module, Showing Pin–Out and External Connections
Motorola IGBT Device Data
3
MHPM6B20E60D3
0.625
0.175
RECOMMENDED PCB LAYOUT
VIEW OF BOARD FROM HEAT SINK
(All Dimensions Typical)
NON–PLA TED THRU–HOLE
0.140
0.265
0.270
PIN 1
KEEP–OUT ZONES (x4)
0.270
0.250
PLATED THRU–HOLES
(x16)
PACKAGE “SHADOW”
0.625
0.065
1.350
1.530
0.250
0.450
0.1750.175
3.500
OPTIONAL NON–PLATED THRU–HOLES FOR ACCESS TO HEA T SINK MOUNTING SCREWS (x2)
Figure 2. Package Footprint
NOTE:
1. Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non–plated thru–hole in the footprint.
2. Dimension of plated thru–holes indicates net size after plating.
3. Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.
4
Motorola IGBT Device Data
AB
AA
MHPM6B20E60D3
P ACKAGE DIMENSIONS
A U
Q3 PL
Y2 PL
12
NPB
16 1531441351261171089
SG14 PL
D 16 PL
C
X
V
H
R
DETAIL Z
16 PL
M4 PL
DETAIL Z
K
E
W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. LEAD LOCATION DIMENSIONS (ie: G, S, R, H ...)
J
ARE TO THE CENTER OF THE LEAD.
DIM MIN MAX MIN MAX
A 88.39 89.41 3.480 3.520
F
B 38.35 39.37 1.510 1.550 C 12.32 13.59 0.485 0.535 D 0.89 1.65 0.035 0.065 E 8.64 9.65 0.340 0.380 F 0.13 0.64 0.005 0.025 G 5.97 6.73 0.235 0.265 H 33.91 34.67 1.335 1.365 J 0.41 1.22 0.016 0.048 K 16.26 17.27 0.640 0.680 L 3.71 4.72 0.146 0.186 M 5.46 6.48 0.215 0.255 N 10.92 11.94 0.430 0.470 P 24.89 25.91 0.980 1.020 Q 2.01 2.62 0.079 0.103 R 16.76 17.53 0.660 0.690 S 15.49 16.26 0.610 0.640 U 75.69 76.71 2.980 3.020
L
V 55.88 57.15 2.200 2.250 W 29.97 30.99 1.180 1.220 Y 5.26 5.77 0.207 0.227
X 11.30 12.07 0.445 0.475 AA 2.29 2.79 0.090 0.110 AB 16.26 17.27 0.640 0.680
INCHESMILLIMETERS
CASE 464–03
ISSUE B
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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Motorola IGBT Device Data
MHPM6B20E60D3/D
5
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