MOTOROLA MCR25 Technical data

MOTOROLAMCR25/D

SEMICONDUCTOR TECHNICAL DATA

Order this document by MCR25/D

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half±wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half±wave, silicon gate±controlled devices are needed.

•Blocking Voltage to 800 Volts

•On-State Current Rating of 25 Amperes RMS

•High Surge Current Capability Ð 300 Amperes

•Industry Standard TO±220AB Package for Ease of Design

•Glass Passivated Junctions for Reliability and Uniformity

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

MCR25

SERIES*

*Motorola preferred devices

SCRs

25 AMPERES RMS

400 thru 800 VOLTS

A

K

A

G

CASE 221A±06 (TO-220AB)

Style 3

Parameter		Symbol	Value	Unit
Peak Repetitive Off-State Voltage (1)		VDRM		Volts
Peak Repetitive Reverse Voltage		VRRM
(TJ = ±40 to 125°C)	MCR25D		400
	MCR25M		600
	MCR25N		800
On-State RMS Current		IT(RMS)	25	A
(All Conduction Angles)
Peak Non-repetitive Surge Current		ITSM	300	A
(One Half Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)		I2t	373	A2sec
Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C)		PGM	20.0	Watts
Average Gate Power (t = 8.3 ms, TC = 80°C)		PG(AV)	0.5	Watts
Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 80°C)		IGM	2.0	A
Operating Junction Temperature Range		TJ	± 40 to +125	°C
Storage Temperature Range		Tstg	± 40 to +150	°C
THERMAL CHARACTERISTICS
Thermal Resistance Ð Junction to Case		RqJC	1.5	°C/W
Ð Junction to Ambient		RqJA	62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds		TL	260	°C

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, Inc. 1995

MCR25 SERIES

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Peak Forward Blocking Current		IDRM				mA
Peak Reverse Blocking Current	TJ = 25°C	IRRM
(VAK = Rated VDRM or VRRM, Gate Open)			Ð	Ð	0.01
	TJ = 125°C		Ð	Ð	2.0
ON CHARACTERISTICS
Peak On-State Voltage* (ITM = 50 A)		VTM	Ð	Ð	1.8	Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)		IGT	4.0	10	30	mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)		VGT	0.5	0.65	1.0	Volts
Hold Current (Anode Voltage =12 V)		IH	5.0	25	40	mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off±State Voltage		dv/dt	50	200	Ð	V/μs
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

°(C)	125
TEMPERATURE	120
	115
	110
CASE	105						= Conduction
							Angle
ALLOWABLE	100
	95
MAXIMUM	90
	85
		= 30°	60 °	90°	120°	180°	dc
,
C	80
T
	75	5		10		15	20	25
	0
		IT(AV), AVERAGE ON±STATE CURRENT (AMPS)

	35
(WATTS)	30
						dc
					180°
DISSIPATION	25
				120°
				90°
	20		60 °
POWER			= 30°
	15
, AVERAGE	10
(AV)	5
P
	0					25
	0	5	10	15	20
		IT(AV), AVERAGE ON±STATE CURRENT (AMPS)

Figure 1. Average Current Derating

Figure 2. Maximum On±State Power Dissipation

2	Motorola Thyristor Device Data