Motorola MCM6728BWJ10, MCM6728BWJ10R, MCM6728BWJ8, MCM6728BWJ8R Datasheet

MCM6728B

1

MOTOROLA FAST SRAM

256K x 4 Bit Fast Static Random
Access Memory

The MCM6728B is a 1,048,576 bit static random access memory organized
as 262,144 words of 4 bits. This device is fabricated using high performance sili­con–gate BiCMOS technology. Static design eliminates the need for external
clocks or timing strobes.

This device meets JEDEC standards for functionality and revolutionary pinout,
and is available in a 400 mil plastic small–outline J–leaded package.

• Single 5 V ± 10% Power Supply

• Fully Static — No Clock or Timing Strobes Necessary

• All Inputs and Outputs Are TTL Compatible

• Three State Outputs

• Fast Access Times: 8, 10, 12 ns

• Center Power and I/O Pins for Reduced Noise

BLOCK DIAGRAM

ROW

DECODER

MEMORY

MATRIX

512 ROWS x 512 x 4

COLUMNS

INPUT

DATA

CONTROL

COLUMN I/O

COLUMN DECODER

A
A
A
A
A
A
A
A

DQ0

A A A A A

E

W

V

CC

V

SS

A

A A A A

DQ3

Order this document

by MCM6728B/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

PIN ASSIGNMENT

MCM6728B

WJ PACKAGE

400 MIL SOJ

CASE 810–03

28
27

26
25
24
23
22
21
20
19
18

17

A
A

A
A
E

A

W

A
A

A

V

CC

2
3

1

5
6

4

7

9
10

8

12
13

11

14

A

A
A

A

DQ2
A

A
DQ3

A
A

A

A

16
15

V

SS

V

CC

V

SS

DQ0

DQ1

A0 – A17 Address Input. . . . . . . . . . . . .

E

Chip Enable. . . . . . . . . . . . . . . . . . . . . .

W

Write Enable. . . . . . . . . . . . . . . . . . . .

DQ0 – DQ3 Data Input/Output. . . . . . . .

V

CC

+ 5 V Power Supply. . . . . . . . . . . .

V

SS

Ground. . . . . . . . . . . . . . . . . . . . . . .

NC No Connection. . . . . . . . . . . . . . . . .

PIN NAMES

REV 2
5/95

 Motorola, Inc. 1995

MCM6728B
2

MOTOROLA FAST SRAM

TRUTH TABLE (X = Don’t Care)

E

W Mode VCC Current Output Cycle

H X Not Selected I

SB1

, I

SB2

High–Z —

L H Read I

CCA

D

out

Read Cycle

L L Write I

CCA

High–Z Write Cycle

ABSOLUTE MAXIMUM RATINGS (See Note)

Rating

Symbol Value Unit

Power Supply Voltage V

CC

– 0.5 to + 7.0 V

Voltage Relative to VSS for Any Pin Except

V

CC

Vin, V

out

– 0.5 to VCC + 0.5 V

Output Current I

out

± 30 mA

Power Dissipation P

D

1.0 W

Temperature Under Bias T

bias

– 10 to + 85 °C

Operating Temperature T

A

0 to + 70 °C

Storage Temperature—Plastic T

stg

– 55 to + 125 °C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER­ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Min Typ Max Unit

Supply Voltage (Operating Voltage Range) V

CC

4.5 5.0 5.5 V

Input High Voltage V

IH

2.2 —

VCC + 0.3**

V

Input Low Voltage V

IL

– 0.5*

— 0.8 V

*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.

**VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.

DC CHARACTERISTICS

Parameter Symbol Min Max Unit

Input Leakage Current (All Inputs, Vin = 0 to VCC) I

lkg(I)

— ± 1.0 µA

Output Leakage Current (E = VIH, V

out

= 0 to VCC) I

lkg(O)

— ± 1.0 µA

Output Low Voltage (IOL = + 8.0 mA) V

OL

— 0.4 V

Output High Voltage (IOH = – 4.0 mA) V

OH

2.4 — V

POWER SUPPLY CURRENTS

Parameter Symbol 6728B–8 6728B–10 6728B–12 Unit Notes

AC Active Supply Current (I

out

= 0 mA) (VCC = max, f = f

max

) I

CCA

195 165 155 mA 1, 2, 3

Active Quiescent Current (E = VIL, VCC = max, f = 0 MHz) I

CC2

90 90 90 mA

AC Standby Current (E = VIH, VCC = max, f = f

max

) I

SB1

60 60 60 mA 1, 2, 3

CMOS Standby Current (VCC = max, f = 0 MHz, E ≥ VCC – 0.2 V,

Vin ≤ VSS + 0.2 V, or ≥ VCC – 0.2 V)

I

SB2

20 20 20 mA

NOTES:

1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V).

2. All addresses transition simultaneously low (LSB) and then high (MSB).

3. Data states are all zero.

­ages or electric fields; however, it is advised
that normal precautions be taken to avoid appli­cation of any voltage higher than maximum
rated voltages to these high–impedance cir­cuits.

This BiCMOS memory circuit has been de­signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.

This device contains circuitry to protect the

inputs against damage due to high static volt

MCM6728B

3

MOTOROLA FAST SRAM

CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T

A

= 25°C, Periodically Sampled Rather Than 100% Tested)

Parameter

Symbol Typ Max Unit

Address Input Capacitance C

in

— 6 pF

Control Pin Input Capacitance C

in

— 6 pF

Input/Output Capacitance C

I/O

— 8 pF

AC OPERATING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ± 10%, TA = 0 to + 70°C, Unless Otherwise Noted)

Input Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . . . .

Input Pulse Levels 0 to 3.0 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input Rise/Fall Time 2 ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . .

Output Load See Figure 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

READ CYCLE TIMING (See Notes 1 and 2)

6728B–8 6728B–10 6728B–12

Parameter Symbol Min Max Min Max Min Max Unit Notes

Read Cycle Time t

AVAV

8 — 10 — 12 — ns 3

Address Access Time t

AVQV

— 8 — 10 — 12 ns

Enable Access Time t

ELQV

— 8 — 10 — 12 ns

Output Hold from Address Change t

AXQX

3 — 3 — 3 — ns

Enable Low to Output Active t

ELQX

3 — 3 — 3 — ns 4,5,6

Enable High to Output High–Z t

EHQZ

0 4 0 5 0 6 ns 4,5,6

NOTES:

1. W

is high for read cycle.

2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.

3. All read cycle timings are referenced from the last valid address to the first transitioning address.

4. At any given voltage and temperature, t

EHQZ

max < t

ELQX

min, for a given device.

5. Transition is measured 200 mV from steady–state voltage with load of Figure 1B.

6. This parameter is sampled and not 100% tested.

7. Device is continuously selected (E

= VIL).

8. Addresses valid prior to or coincident with E

going low.

AC TEST LOADS

OUTPUT

Z0 = 50

Ω

RL = 50

Ω

VL = 1.5 V

Figure 1A Figure 1B

5 pF

+5 V

OUTPUT

255

Ω

480

Ω

The table of timing values shows either a
minimum or a maximum limit for each param­eter. Input requirements are specified from
the external system point of view. Thus, ad­dress setup time is shown as a minimum
since the system must supply at least that
much time (even though most devices do not
require it). On the other hand, responses from
the memory are specified from the device
point of view. Thus, the access time is shown
as a maximum since the device never pro­vides data later than that time.

TIMING LIMITS