The MCM6726C is a 1,048,576 bit static random access memory organized
as 131,072 words of 8 bits. Static design eliminates the need for external clocks
or timing strobes.
Output enable (G
) is a special control feature that provides increased system
flexibility and eliminates bus contention problems.
This device meets JEDEC standards for functionality and revolutionary pinout,
and is available in a 400 mil plastic small–outline J–leaded package.
• Single 5 V ± 10% Power Supply
• Fully Static — No Clock or Timing Strobes Necessary
Power Supply VoltageV
Voltage Relative to VSS for Any Pin Except
V
CC
Output CurrentI
Power DissipationP
Temperature Under BiasT
Operating TemperatureT
Storage Temperature — PlasticT
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
SymbolValueUnit
CC
Vin, V
out
bias
stg
out
D
A
– 0.5 to + 7.0V
– 0.5 to VCC + 0.5V
± 30mA
1.5W
– 10 to + 85°C
0 to + 70°C
– 55 to + 125°C
This device contains circuitry to protect the
inputs against damage due to high static voltages or electric fields; however, it is advised
that normal precautions be taken to avoid application of any voltage higher than maximum
rated voltages to these high–impedance circuits.
This BiCMOS memory circuit has been designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.
DC OPERA TING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
ParameterSymbolMinTypMaxUnit
Supply Voltage (Operating Voltage Range)V
Input High VoltageV
Input Low VoltageV
**VIL (min) = –0.5 V dc; VIL (min) = –2.0 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.
CC
IH
IL
DC CHARACTERISTICS
ParameterSymbolMinMaxUnit
Input Leakage Current (All Inputs, Vin = 0 to VCC)I
Output Leakage Current (E = VIH, V
Output Low Voltage (IOL = + 8.0 mA)V
Output High Voltage (IOH = – 4.0 mA)V
= 0 to VCC)I
out
POWER SUPPLY CURRENTS
ParameterSymbolMCM6726C–6 MCM6726C–7UnitNotes
AC Active Supply Current (I
Active Quiescent Current (E = VIL, VCC = max, f = 0 MHz)I
AC Standby Current (E = VIH, VCC = max, f = f
CMOS Standby Current (VCC = max, f = 0 MHz, E ≥ VCC – 0.2 V,
Vin ≤ VSS + 0.2 V, or ≥ VCC – 0.2 V)
NOTES:
1. Reference AC Operating Conditions and Characterisitics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3 V, VIH = 3 V).
2. All addresses transition simultaneously low (LSB) and then high (MSB).
3. Data States are all zero.
= 0 mA) (VCC = max, f = f
out
max
)I
max
)I
CCA
CC2
SB1
I
SB2
4.55.05.5V
2.2—
– 0.5*
lkg(I)
lkg(O)
OL
OH
250220mA1, 2, 3
100100mA
100100mA1, 2, 3
6060mA
—0.8V
—±1.0µA
—±1.0µA
—0.4V
2.4—V
VCC + 0.3**
V
MCM6726C
2
MOTOROLA FAST SRAM
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T
Address Input CapacitanceC
Control Pin Input CapacitanceC
Input/Output CapacitanceC
= 25°C, Periodically Sampled Rather Than 100% Tested)
A
Parameter
SymbolTypMaxUnit
in
in
I/O
—6pF
—6pF
—8pF
AC OPERA TING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ±10%, TA = 0 to +70°C, Unless Otherwise Noted)
Read Cycle Timet
Address Access Timet
Enable Access Timet
Output Enable Access Timet
Output Hold from Address Changet
Enable Low to Output Activet
Output Enable Low to Output Activet
Enable High to Output High–Zt
Output Enable High to Output High–Zt
NOTES:
1. W
is high for read cycle.
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.
3. All read cycle timings are referenced from the last valid address to the first transitioning address.
4. At any given voltage and temperature, t
to device.
5. Transition is measured 200 mV from steady–state voltage with load of Figure 1b.
The table of timing values shows either a
minimum or a maximum limit for each parameter. Input requirements are specified from
the external system point of view. Thus, address setup time is shown as a minimum
since the system must supply at least that
much time. On the other hand, responses
from the memory are specified from the device point of view. Thus, the access time is
shown as a maximum since the device never
provides data later than that time.
Figure 1. AC Test Loads
MCM6726C
3
A (ADDRESS)
READ CYCLE 1 (See Note 7)
t
AXQX
t
AVAV
Q (DATA OUT)
A (ADDRESS)
E (CHIP ENABLE)
G (OUTPUT ENABLE)
Q (DATA OUT)
t
AVQV
READ CYCLE 2 (See Note 8)
t
AVAV
t
AVQV
t
ELQV
t
ELQX
t
GLQV
t
GLQX
DATA VALID
DATA VALIDPREVIOUS DATA VALID
t
EHQZ
t
GHQZ
MCM6726C
4
MOTOROLA FAST SRAM
WRITE CYCLE 1 (W Controlled, See Notes 1 and 2)
MCM6726C–6MCM6726C–7
ParameterSymbolMinMaxMinMaxUnitNotes
Write Cycle Timet
Address Setup Timet
Address Valid to End of W ritet
Address Valid to End of W rite, G Hight
Write Pulse Widtht
Write Pulse Width, G Hight
Data Valid to End of W ritet
Data Hold Timet
Write Low to Data High–Zt
Write High to Output Activet
Write Recovery Timet
NOTES:
1. A write occurs during the overlap of E
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.
3. All write cycle timings are referenced from the last valid address to the first transitioning address.
4. Transition is measured 200 mV from steady–state voltage with load of Figure 1b.
5. This parameter is sampled and not 100% tested.
6. At any given voltage and temperature, t
low and W low.
max < t
WLQZ
min both for a given device and from device to device.
WHQX
AVAV
AVWL
AVWH
AVWH
WLWH
t
WLEH
WLWH
t
WLEH
DVWH
WHDX
WLQZ
WHQX
WHAX
6—7—ns3
0—0—ns
6—7—ns
6—7—ns
6—7—ns
6—7—ns
3—3.5—ns
0—0—ns
—3.5—3.5ns4,5,6
3—3—ns4,5,6
1—1—ns
A (ADDRESS)
E
(CHIP ENABLE)
W
(WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
HIGH–Z
t
AVWL
WRITE CYCLE 1
t
WLQZ
t
AVAV
t
AVWH
t
WLEH
t
WLWH
t
DVWH
DATA VALID
HIGH–Z
t
WHAX
t
WHDX
t
WHQX
MOTOROLA FAST SRAM
MCM6726C
5
WRITE CYCLE 2 (E Controlled, See Notes 1 and 2)
MCM6726C–6MCM6726C–7
ParameterSymbolMinMaxMinMaxUnitNotes
Write Cycle Timet
Address Setup Timet
Address Valid to End of W ritet
Enable to End of Writet
Data Valid to End of W ritet
Data Hold Timet
Write Recovery Timet
NOTES:
1. A write occurs during the overlap of E
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.
3. All write cycle timings are referenced from the last valid address to the first transitioning address.
4. If E
goes low coincident with or after W goes low, the output will remain in a high impedance condition.
5. If E
goes high coincident with or before W goes high, the output will remain in a high impedance condition.
low and W low.
AVAV
AVEL
AVEH
ELEH
t
ELWH
DVEH
EHDX
EHAX
6—7—ns3
0—0—ns
6—7—ns
5—6—ns4,5
3—3.5—ns
0—0—ns
0—0—ns
WRITE CYCLE 2
t
AVAV
A (ADDRESS)
E
(CHIP ENABLE)
W
(WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
t
AVEL
t
AVEH
HIGH–Z
t
ELEH
t
ELWH
t
DVEH
DATA VALID
t
EHDX
t
EHAX
MCM6726C
6
MOTOROLA FAST SRAM
P ACKAGE DIMENSIONS
32–LEAD
400 MIL SOJ
CASE 857A–02
32 PL
F
0.17 (0.007)BA
N
32
1
-A-
17
16
DETAIL Z
0.17 (0.007)AB
L
G
32 PL
D
0.17 (0.007)BA
SSS
SSS
T
P
-B-
0.10 (0.004)
K
DETAIL Z
-T-
SEATING
PLANE
R
0.25 (0.010)AB
SSS
SSS
T
T
T
C
E
S RADIUS
NOTE 3
NOTE 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. TO BE DETERMINED AT PLANE -T-.
4. DIMENSION A & B DO NOT INCLUDE MOLD
PROTRUSION. MOLD PROTRUSION SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
5. DIMENSION A & B INCLUDE MOLD MISMATCH AND
ARE DETERMINED AT THE PARTING LINE.
INCHESMILLIMETERS
MINMINMAXMAX
DIM
A
B
C
D
E
F
G
K
L
N
P
R
S
0.820
0.395
0.128
0.016
0.088
0.026
0.050 BSC
0.035
0.025 BSC
0.030
0.435
0.365
0.030
0.830
0.405
0.148
0.020
0.098
0.032
0.045
0.045
0.445
0.375
0.040
20.83
10.03
3.26
0.41
2.24
0.67
1.27 BSC
0.89
0.64 BSC
0.76
11.05
9.27
0.77
21.08
10.29
3.75
0.50
2.48
0.81
1.14
1.14
11.30
9.52
1.01
ORDERING INFORMATION
(Order by Full Part Number)
MCM 6726C WJXX
Motorola Memory Prefix
Part Number
Full Part Numbers — MCM6726CWJ6MCM6726CWJ7
MCM6726CWJ6RMCM6726CWJ7R
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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