Datasheet MCM6726CWJ7R, MCM6726CWJ7, MCM6726CWJ6, MCM6726CWJ6R Datasheet (Motorola)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
128K x 8 Bit Fast Static Random Access Memory
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by MCM6726C/D
MCM6726C
The MCM6726C is a 1,048,576 bit static random access memory organized as 131,072 words of 8 bits. Static design eliminates the need for external clocks or timing strobes.
) is a special control feature that provides increased system
flexibility and eliminates bus contention problems.
This device meets JEDEC standards for functionality and revolutionary pinout, and is available in a 400 mil plastic small–outline J–leaded package.
Single 5 V ± 10% Power Supply
Fully Static — No Clock or Timing Strobes Necessary
All Inputs and Outputs Are TTL Compatible
Three State Outputs
Fast Access Times: 6, 7 ns
Center Power and I/O Pins for Reduced Noise
BLOCK DIAGRAM
A A A A
A A A A
ROW
DECODER
MEMORY
MATRIX
512 ROWS x 256 x 8
COLUMNS
V
CC
V
SS
WJ PACKAGE
400 MIL SOJ
CASE 857A–02
PIN ASSIGNMENT
AA
1
A
2
A
3
A
4
E
5
DQ
6
DQ
7
V
8
CC
V
9
SS
DQ
10
DQ
11
W
12
A
13
A
14
A
15
A
16
32
A
31
A
30
A
29
G
28
DQ
27
DQ
26
V
SS
25
V
CC
24
DQ
23
DQ
22
A
21
A
20
A
19
A
18
A
17
DQ
INPUT
DATA
CONTROL
DQ
E
W G
REV 3 3/7/97
Motorola, Inc. 1997
MOTOROLA FAST SRAM
COLUMN I/O
COLUMN DECODER
AA A A
A A A A
PIN NAMES
A Address Input. . . . . . . . . . . . . . . . . . . .
E
A
W G
DQ Data Input/Output. . . . . . . . . . . . . . .
V
CC
V
SS
Chip Enable. . . . . . . . . . . . . . . . . . . . . .
Write Enable. . . . . . . . . . . . . . . . . . . .
Output Enable. . . . . . . . . . . . . . . . . . .
+ 5 V Power Supply. . . . . . . . . . . .
Ground. . . . . . . . . . . . . . . . . . . . . . .
MCM6726C
1
TRUTH TABLE (X = Don’t Care)
G W Mode VCC Current Output Cycle
E
H X X Not Selected I L H H Output Disabled I L L H Read I L X L Write I
SB1
, I
CCA CCA CCA
SB2
High–Z — High–Z
D
out
High–Z Write Cycle
Read Cycle
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Power Supply Voltage V Voltage Relative to VSS for Any Pin Except
V
CC
Output Current I Power Dissipation P Temperature Under Bias T Operating Temperature T Storage Temperature — Plastic T
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER­ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Symbol Value Unit
CC
Vin, V
out
bias
stg
out
D
A
– 0.5 to + 7.0 V
– 0.5 to VCC + 0.5 V
± 30 mA
1.5 W
– 10 to + 85 °C
0 to + 70 °C
– 55 to + 125 °C
This device contains circuitry to protect the inputs against damage due to high static volt­ages or electric fields; however, it is advised that normal precautions be taken to avoid appli­cation of any voltage higher than maximum rated voltages to these high–impedance cir­cuits.
This BiCMOS memory circuit has been de­signed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained.
DC OPERA TING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Typ Max Unit
Supply Voltage (Operating Voltage Range) V Input High Voltage V Input Low Voltage V
**VIL (min) = –0.5 V dc; VIL (min) = –2.0 V ac (pulse width 2.0 ns) for I 20.0 mA.
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width 2.0 ns) for I 20.0 mA.
CC
IH
IL
DC CHARACTERISTICS
Parameter Symbol Min Max Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC) I Output Leakage Current (E = VIH, V Output Low Voltage (IOL = + 8.0 mA) V Output High Voltage (IOH = – 4.0 mA) V
= 0 to VCC) I
out
POWER SUPPLY CURRENTS
Parameter Symbol MCM6726C–6 MCM6726C–7 Unit Notes
AC Active Supply Current (I Active Quiescent Current (E = VIL, VCC = max, f = 0 MHz) I AC Standby Current (E = VIH, VCC = max, f = f CMOS Standby Current (VCC = max, f = 0 MHz, E VCC – 0.2 V,
Vin VSS + 0.2 V, or VCC – 0.2 V)
NOTES:
1. Reference AC Operating Conditions and Characterisitics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3 V, VIH = 3 V).
2. All addresses transition simultaneously low (LSB) and then high (MSB).
3. Data States are all zero.
= 0 mA) (VCC = max, f = f
out
max
) I
max
) I
CCA CC2
SB1
I
SB2
4.5 5.0 5.5 V
2.2
– 0.5*
lkg(I)
lkg(O)
OL
OH
250 220 mA 1, 2, 3 100 100 mA 100 100 mA 1, 2, 3
60 60 mA
0.8 V
±1.0 µA — ±1.0 µA — 0.4 V
2.4 V
VCC + 0.3**
V
MCM6726C 2
MOTOROLA FAST SRAM
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, T
Address Input Capacitance C Control Pin Input Capacitance C Input/Output Capacitance C
= 25°C, Periodically Sampled Rather Than 100% Tested)
A
Parameter
Symbol Typ Max Unit
in in
I/O
6 pF — 6 pF — 8 pF
AC OPERA TING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V ±10%, TA = 0 to +70°C, Unless Otherwise Noted)
Input Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . . . .
Input Pulse Levels 0 to 3.0 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Rise/Fall Time 2 ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
READ CYCLE TIMING (See Notes 1 and 2)
Parameter Symbol Min Max Min Max Unit Notes
Read Cycle Time t Address Access Time t Enable Access Time t Output Enable Access Time t Output Hold from Address Change t Enable Low to Output Active t Output Enable Low to Output Active t Enable High to Output High–Z t Output Enable High to Output High–Z t
NOTES:
1. W
is high for read cycle.
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.
3. All read cycle timings are referenced from the last valid address to the first transitioning address.
4. At any given voltage and temperature, t to device.
5. Transition is measured 200 mV from steady–state voltage with load of Figure 1b.
6. This parameter is sampled and not 100% tested.
7. Device is continuously selected (E
8. Addresses valid prior to or coincident with E
= VIL, G = VIL).
EHQZ
max < t
going low.
ELQX
min, and t
Output Timing Measurement Reference Level 1.5 V. . . . . . . . . . . . .
Output Load See Figure 1a. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
MCM6726C–6 MCM6726C–7
AVAV AVQV ELQV GLQV AXQX ELQX GLQX EHQZ
GHQZ
GHQZ
6 7 ns 3 — 6 7 ns — 6 7 ns — 4 4 ns
2 2 ns
3 3 ns 4,5,6
0 0 ns 4,5,6 — 3 3.5 ns 4,5,6 — 3 3.5 ns 4,5,6
max < t
min, both for a given device and from device
GLQX
OUTPUT
Z0 = 50
(a) (b)
MOTOROLA FAST SRAM
RL = 50
VL = 1.5 V
TIMING LIMITS
+5 V
480
OUTPUT
255
5 pF
The table of timing values shows either a minimum or a maximum limit for each param­eter. Input requirements are specified from the external system point of view. Thus, ad­dress setup time is shown as a minimum since the system must supply at least that much time. On the other hand, responses from the memory are specified from the de­vice point of view. Thus, the access time is shown as a maximum since the device never provides data later than that time.
Figure 1. AC Test Loads
MCM6726C
3
A (ADDRESS)
READ CYCLE 1 (See Note 7)
t
AXQX
t
AVAV
Q (DATA OUT)
A (ADDRESS)
E (CHIP ENABLE)
G (OUTPUT ENABLE)
Q (DATA OUT)
t
AVQV
READ CYCLE 2 (See Note 8)
t
AVAV
t
AVQV
t
ELQV
t
ELQX
t
GLQV
t
GLQX
DATA VALID
DATA VALIDPREVIOUS DATA VALID
t
EHQZ
t
GHQZ
MCM6726C 4
MOTOROLA FAST SRAM
WRITE CYCLE 1 (W Controlled, See Notes 1 and 2)
MCM6726C–6 MCM6726C–7
Parameter Symbol Min Max Min Max Unit Notes
Write Cycle Time t Address Setup Time t Address Valid to End of W rite t Address Valid to End of W rite, G High t Write Pulse Width t
Write Pulse Width, G High t
Data Valid to End of W rite t Data Hold Time t Write Low to Data High–Z t Write High to Output Active t Write Recovery Time t
NOTES:
1. A write occurs during the overlap of E
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.
3. All write cycle timings are referenced from the last valid address to the first transitioning address.
4. Transition is measured 200 mV from steady–state voltage with load of Figure 1b.
5. This parameter is sampled and not 100% tested.
6. At any given voltage and temperature, t
low and W low.
max < t
WLQZ
min both for a given device and from device to device.
WHQX
AVAV
AVWL AVWH AVWH WLWH
t
WLEH WLWH
t
WLEH DVWH WHDX WLQZ WHQX WHAX
6 7 ns 3 0 0 ns 6 7 ns 6 7 ns 6 7 ns
6 7 ns
3 3.5 ns 0 0 ns
3.5 3.5 ns 4,5,6
3 3 ns 4,5,6 1 1 ns
A (ADDRESS)
E
(CHIP ENABLE)
W
(WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
HIGH–Z
t
AVWL
WRITE CYCLE 1
t
WLQZ
t
AVAV
t
AVWH
t
WLEH
t
WLWH
t
DVWH
DATA VALID
HIGH–Z
t
WHAX
t
WHDX
t
WHQX
MOTOROLA FAST SRAM
MCM6726C
5
WRITE CYCLE 2 (E Controlled, See Notes 1 and 2)
MCM6726C–6 MCM6726C–7
Parameter Symbol Min Max Min Max Unit Notes
Write Cycle Time t Address Setup Time t Address Valid to End of W rite t Enable to End of Write t
Data Valid to End of W rite t Data Hold Time t Write Recovery Time t
NOTES:
1. A write occurs during the overlap of E
2. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycles.
3. All write cycle timings are referenced from the last valid address to the first transitioning address.
4. If E
goes low coincident with or after W goes low, the output will remain in a high impedance condition.
5. If E
goes high coincident with or before W goes high, the output will remain in a high impedance condition.
low and W low.
AVAV AVEL AVEH ELEH
t
ELWH DVEH EHDX
EHAX
6 7 ns 3 0 0 ns 6 7 ns 5 6 ns 4,5
3 3.5 ns 0 0 ns 0 0 ns
WRITE CYCLE 2
t
AVAV
A (ADDRESS)
E
(CHIP ENABLE)
W
(WRITE ENABLE)
D (DATA IN)
Q (DATA OUT)
t
AVEL
t
AVEH
HIGH–Z
t
ELEH
t
ELWH
t
DVEH
DATA VALID
t
EHDX
t
EHAX
MCM6726C 6
MOTOROLA FAST SRAM
P ACKAGE DIMENSIONS
32–LEAD
400 MIL SOJ
CASE 857A–02
32 PL
F
0.17 (0.007) B A
N
32
1
-A-
17
16
DETAIL Z
0.17 (0.007) A B
L
G
32 PL
D
0.17 (0.007) B A
S S S
S S S
T
P
-B-
0.10 (0.004)
K
DETAIL Z
-T-
SEATING PLANE
R
0.25 (0.010) A B
S S S
S S S
T
T
T
C
E
S RADIUS
NOTE 3
NOTE 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. TO BE DETERMINED AT PLANE -T-.
4. DIMENSION A & B DO NOT INCLUDE MOLD PROTRUSION. MOLD PROTRUSION SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
5. DIMENSION A & B INCLUDE MOLD MISMATCH AND ARE DETERMINED AT THE PARTING LINE.
INCHES MILLIMETERS
MIN MINMAX MAX
DIM
A B C D E F G K L N P R S
0.820
0.395
0.128
0.016
0.088
0.026
0.050 BSC
0.035
0.025 BSC
0.030
0.435
0.365
0.030
0.830
0.405
0.148
0.020
0.098
0.032
0.045
0.045
0.445
0.375
0.040
20.83
10.03
3.26
0.41
2.24
0.67
1.27 BSC
0.89
0.64 BSC
0.76
11.05
9.27
0.77
21.08
10.29
3.75
0.50
2.48
0.81
1.14
1.14
11.30
9.52
1.01
ORDERING INFORMATION
(Order by Full Part Number)
MCM 6726C WJ X X
Motorola Memory Prefix Part Number
Full Part Numbers — MCM6726CWJ6 MCM6726CWJ7
MCM6726CWJ6R MCM6726CWJ7R
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MOTOROLA FAST SRAM
MCM6726C/D
MCM6726C
7
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