Motorola MC74HC366AD, MC74HC366ADT Datasheet

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SEMICONDUCTOR TECHNICAL DATA
1
REV 0
Motorola, Inc. 1997
1/97
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High–Performance Silicon–Gate CMOS
The MC74HC366A is identical in pinout to the LS366. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
This device is a high–speed hex buffer with 3–state outputs and two common active–low Output Enables. When either of the enables is high, the buffer outputs are placed into high–impedance states. The HC366A has inverting outputs.
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 78 FETs or 19.5 Equivalent Gates
LOGIC DIAGRAM
A3
A4
A5
A0
A1
A2
2
4
6
10
12
14
OUTPUT ENABLE 1
1
15
PIN 16 = V
CC
PIN 8 = GND
OUTPUT ENABLE 2
Y3
Y4
Y5
Y0
Y1
Y2
3
5
7
9
11
13
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
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PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
A4
Y5
A5
OUTPUT ENABLE 2
V
CC
Y3
A3
Y4
A1
Y0
A0
OUTPUT
ENABLE 1
GND
Y2
A2
Y1
FUNCTION TABLE
Inputs Output
Enable Enable
12AY
LLLH LLHL HXXZ XHXZ
X = don’t care Z = high impedance
D SUFFIX
SOIC PACKAGE
16–LEAD
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
16–LEAD
CASE 648–08
ORDERING INFORMATION
MC74HCXXXAN MC74HCXXXAD MC74HCXXXADT
Plastic SOIC TSSOP
DT SUFFIX
TSSOP PACKAGE
16–LEAD
CASE 948F–01
MC74HC366A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
Î
Î
Î
P
D
ОООООООООООО
Î
ОООООООООООО
Power Dissipation in Still Air, Plastic DIP†
SOIC Package†
TSSOP Package†
ÎÎÎÎ
Î
ÎÎÎÎ
750 500 450
Î
Î
Î
mW
Î
T
stg
ОООООООООООО
Storage Temperature
ÎÎÎÎ
– 65 to + 150
Î
_
C
Î
Î
T
L
ОООООООООООО
Î
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
ÎÎÎÎ
Î
260
Î
Î
_
C
*Maximum Ratings are those values beyond which damage to the device may occur .
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
ÎÎ
V
CC
ОООООООООООО
DC Supply Voltage (Referenced to GND)
Î
2.0Î6.0ÎV
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
ÎÎ
Î
ÎÎ
Î
tr, t
f
ОООООООООООО
Î
ОООООООООООО
Î
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
Î
Î
Î
Î
0 0 0
Î
Î
Î
Î
1000
500 400
Î
Î
Î
Î
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
ÎÎ
Symbol
ООООООО
Parameter
ООООООО
Test Conditions
ÎÎ
V
CC
V
ÎÎ
– 55 to
25_C
ÎÎ
v
85_C
ÎÎ
v
125_C
Î
Unit
ÎÎ
Î
ÎÎ
Î
V
IH
ООООООО
Î
ООООООО
Î
Minimum High–Level Input Voltage
ООООООО
Î
ООООООО
Î
V
out
= 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
ÎÎ
1.5
3.15
4.2
ÎÎ
Î
ÎÎ
Î
1.5
3.15
4.2
ÎÎ
Î
ÎÎ
Î
1.5
3.15
4.2
Î
Î
Î
Î
V
ÎÎ
Î
V
IL
ООООООО
Î
Maximum Low–Level Input Voltage
ООООООО
Î
V
out
= VCC – 0.1 V
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
0.3
0.9
1.2
ÎÎ
Î
0.3
0.9
1.2
ÎÎ
Î
0.3
0.9
1.2
Î
Î
V
ÎÎ
Î
V
OH
ООООООО
Î
Minimum High–Level Output Voltage
ООООООО
Î
Vin = V
IL
|I
out
| v 20 µA
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
1.9
4.4
5.9
ÎÎ
Î
1.9
4.4
5.9
ÎÎ
Î
1.9
4.4
5.9
Î
Î
V
ÎÎÎОООООООÎООООООО
Î
Vin = V
IL
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
ÎÎ
Î
4.5
6.0
ÎÎ
3.98
5.48
ÎÎ
Î
3.84
5.34
ÎÎ
Î
3.70
5.20
Î
Î
ÎÎ
Î
ÎÎ
Î
V
OL
ООООООО
Î
ООООООО
Î
Maximum Low–Level Output Voltage
ООООООО
Î
ООООООО
Î
Vin = V
IH
|I
out
| v 20 µA
ÎÎ
Î
ÎÎ
Î
2.0
4.5
6.0
ÎÎ
ÎÎ
0.1
0.1
0.1
ÎÎ
Î
ÎÎ
Î
0.1
0.1
0.1
ÎÎ
Î
ÎÎ
Î
0.1
0.1
0.1
Î
Î
Î
Î
V
Vin = V
IH
|I
out
| v 6.0 mA
|I
out
| v 7.8 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
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