Motorola MC54HC259J, MC74HC259D Datasheet
SEMICONDUCTOR TECHNICAL DATA
1
REV 6
Motorola, Inc. 1995
10/95
! !
High–Performance Silicon–Gate CMOS
The MC54/74HC259 is identical in pinout to the LS259. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
The HC259 has four modes of operation as shown in the mode selection
table. In the addressable latch mode, the data on Data In is written into the
addressed latch. T he addressed latch follows the data input with a ll
non–addressed latches remaining in their previous states. In the memory
mode, all latches remain in their previous state and are unaffected by the
Data or Address inputs. In the one–of–eight decoding or demultiplexing
mode, the addressed output follows the state of Data In with all other outputs
in the LOW state. In the Reset mode all outputs are LOW and unaffected by
the address and data inputs. When operating the HC259 as an addressable
latch, changing more than one bit of the address could impose a transient
wrong address. Therefore, this should only be done while in the memory
mode.
• Output Drive Capability: 10 LSTTL Loads
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 202 FETs or 50.5 Equivalent Gates
LOGIC DIAGRAM
ADDRESS
INPUTS
A0
A1
A2
DATA IN
RESET
ENABLE
14
15
13
3
2
1
12
11
10
9
7
6
5
4
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
PIN 16 = V
CC
PIN 8 = GND
NONINVERTING
OUTPUTS
PIN ASSIGNMENT
LATCH SELECTION TABLE
Address Inputs
Latch
C B A Addressed
L L L Q0
L L H Q1
L H L Q2
L H H Q3
H L L Q4
H L H Q5
H H L Q6
H H H Q7
MODE SELECTION TABLE
Enable Reset Mode
L H Addressable Latch
H H Memory
L L 8–Line Demultiplexer
H L Reset
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q7
DATA IN
ENABLE
RESET
V
CC
Q4
Q5
Q6
Q0
A2
A1
A0
GND
Q3
Q2
Q1
D SUFFIX
SOIC PACKAGE
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ORDERING INFORMATION
MC54HCXXXJ
MC74HCXXXN
MC74HCXXXD
Ceramic
Plastic
SOIC
1
16
1
16
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
1
16
MC54/74HC259
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low–Level Input
Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
V
OH
Minimum High–Level Output
Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
V
OL
Maximum Low–Level Output
Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
I
CC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
I
out
= 0 µA
6.0
8
80
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
MC54/74HC259
High–Speed CMOS Logic Data
DL129 — Rev 6
3 MOTOROLA
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Data to Output
(Figures 1 and 6)
2.0
4.5
6.0
185
37
31
230
46
39
280
56
48
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Address Select to Output
(Figures 2 and 6)
2.0
4.5
6.0
215
43
37
270
54
46
325
65
55
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Enable to Output
(Figures 3 and 6)
2.0
4.5
6.0
200
40
34
250
50
43
300
60
51
ns
t
PHL
Maximum Propagation Delay, Reset to Output
(Figures 4 and 6)
2.0
4.5
6.0
155
31
26
195
39
33
235
47
40
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 6)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
C
in
Maximum Input Capacitance
—
10
10
10
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Package)*
30
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
TIMING REQUIREMENTS (Input t
r
= tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC
V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
su
Minimum Setup Time, Address or Data to Enable
(Figure 5)
2.0
4.5
6.0
100
20
17
125
25
21
150
30
26
ns
t
h
Minimum Hold Time, Enable to Address or Data
(Figure 5)
2.0
4.5
6.0
5
5
5
5
5
5
5
5
5
ns
t
w
Minimum Pulse Width, Reset or Enable
(Figure 3 or 4)
2.0
4.5
6.0
80
16
14
100
20
17
120
24
20
ns
tr, t
f
Maximum Input Rise and Fall Times
(Figure 1)
2.0
4.5
6.0
1000
500
400
1000
500
400
1000
500
400
ns
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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