Motorola MC74HC259ADT, MC74HC259AN, MC74HC259AD Datasheet

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SEMICONDUCTOR TECHNICAL DATA
1
REV 0
Motorola, Inc. 1995
10/95
 
High–Performance Silicon–Gate CMOS
The MC54/74HC259A is identical in pinout to the LS259. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
The HC259A has four modes of operation as shown in the mode selection table. In the addressable latch mode, the data on Data In is written into the addressed l atch. The addressed l atch follows t he data input with all non–addressed latches remaining in their previous states. In the memory mode, all latches remain in their previous state and are unaffected by the Data or Address inputs. In the one–of–eight decoding or demultiplexing mode, the addressed output follows the state of Data In with all other outputs in the LOW state. In the Reset mode all outputs are LOW and unaffected by the address a nd data i nputs. W hen o perating t he H C259A a s an addressable latch, changing more than one bit of the address could impose a transient wrong address. Therefore, this should only be done while in the memory mode.
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 202 FETs or 50.5 Equivalent Gates
LOGIC DIAGRAM
ADDRESS
INPUTS
A0 A1 A2
DATA IN
RESET
ENABLE
14
15
13
3
2
1
12
11
10
9
7
6
5
4
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
PIN 16 = V
CC
PIN 8 = GND
NONINVERTING OUTPUTS
LATCH SELECTION TABLE
Address Inputs
Latch
C B A Addressed
L L L Q0 L L H Q1 L H L Q2 L H H Q3 H L L Q4 H L H Q5 H H L Q6 H H H Q7
MODE SELECTION TABLE
Enable Reset Mode
L H Addressable Latch H H Memory L L 8–Line Demultiplexer H L Reset
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
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PIN ASSIGNMENT
13
14
15
16
9
10
11
125
4
3
2
1
8
7
6
Q7
DATA IN
ENABLE
RESET
V
CC
Q4
Q5
Q6
Q0
A2
A1
A0
GND
Q3
Q2
Q1
D SUFFIX
SOIC PACKAGE
CASE 751B–05
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ORDERING INFORMATION
MC54HCXXXAJ MC74HCXXXAN MC74HCXXXAD MC74HCXXXADT
Ceramic Plastic SOIC TSSOP
1
16
1
16
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
1
16
1
16
DT SUFFIX
TSSOP PACKAGE
CASE 948F–01
MC54/74HC259A
MOTOROLA High–Speed CMOS Logic Data
DL129 — Rev 6
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V
in
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
V
out
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
in
DC Input Current, per Pin
± 20
mA
I
out
DC Output Current, per Pin
± 25
mA
I
CC
DC Supply Current, VCC and GND Pins
± 50
mA
P
D
Power Dissipation in Still Air,Plastic or Ceramic DIP†
SOIC Package†
TSSOP Package†
750 500 450
mW
T
stg
Storage Temperature
– 65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
(Ceramic DIP)
260 300
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C SOIC Package: – 7 mW/_C from 65_ to 125_C TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, V
out
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
V
T
A
Operating Temperature, All Package Types
– 55
+ 125
_
C
tr, t
f
Input Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 3.0 V
VCC = 4.5 V VCC = 6.0 V
0 0 0 0
1000
600 500 400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
V
IH
Minimum High–Level Input Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
V
IL
Maximum Low–Level Input Voltage
V
out
= 0.1 V or VCC – 0.1 V
|I
out
| v 20 µA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.80
0.5
0.9
1.35
1.80
0.5
0.9
1.35
1.80
V
V
OH
Minimum High–Level Output Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL|I
out
| v 2.4 mA
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance cir­cuit. For proper operation, Vin and V
out
should be constrained to the
range GND v (Vin or V
out
) v VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
MC54/74HC259A
High–Speed CMOS Logic Data DL129 — Rev 6
3 MOTOROLA
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Unit
Guaranteed Limit
V
CC
V
Test Conditions
Parameter
Symbol
Unit
v
125_C
v
85_C
– 55 to
25_C
V
CC
V
Test Conditions
Parameter
Symbol
V
OL
Maximum Low–Level Output Voltage
Vin = VIH or V
IL
|I
out
| v 20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL|I
out
| v 2.4 mA
|I
out
| v 4.0 mA
|I
out
| v 5.2 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
I
in
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
I
CC
Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND I
out
= 0 µA
6.0
4
40
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (C
L
= 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC V
– 55 to
25_C
v
85_Cv 125_C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Data to Output
(Figures 1 and 6)
2.0
3.0
4.5
6.0
125
45 32 25
160
60 32 28
175
70 42 33
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Address Select to Output
(Figures 2 and 6)
2.0
3.0
4.5
6.0
150
60 32 28
175
70 40 30
200
80 45 35
ns
t
PLH
,
t
PHL
Maximum Propagation Delay, Enable to Output
(Figures 3 and 6)
2.0
3.0
4.5
6.0
150
60 32 28
175
70 40 30
200
80 45 35
ns
t
PHL
Maximum Propagation Delay, Reset to Output
(Figures 4 and 6)
2.0
3.0
4.5
6.0
110
36 22 19
125
45 26 23
160
60 32 28
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 6)
2.0
3.0
4.5
6.0
75 27 15 13
95 32 19 16
110
36 22 19
ns
C
in
Maximum Input Capacitance
10
10
10
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
C
PD
Power Dissipation Capacitance (Per Package)*
30
pF
*Used to determine the no–load dynamic power consumption: PD = CPD V
CC
2
f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
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